Data Sheet Schottky Barrier Diode RB160M-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 3)High reliability 3.5±0.2 ① 2.6±0.1 3.05 Features 1)Small power mold type.（PMDU） 2)Low IR PMDU Construction Silicon epitaxial planar Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Io IFSM Tj Tstg 3.71±0.1 8.0±0.2 φ1.0±0.1 Limits 60 60 1 30 150 40 to 150 Symbol VRM VR 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX Unit V V A A C C (*1)Mounting on epoxi board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF IR Min. - Typ. 0.49 7.0 Max. 0.55 50 Unit V μA IF=1.0A VR=60V Ct - 40 - pF VR=10V , f=1MHz 1/3 2011.04 - Rev.E Data Sheet RB160M-60 1 10000 Ta=25℃ Ta=-25℃ 0.01 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 10 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 600 10 20 30 40 50 60 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 520 510 500 490 80 60 50 40 30 AVE:6.966uA 20 480 60 50 40 30 AVE:37.9pF 20 10 0 IR DISPERSION MAP Ct DISPERSION MAP 8.3ms AVE:85.0A 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 50 70 0 30 100 80 10 VF DISPERSION MAP 150 15 10 5 0 AVE:11.7ns Ifsm 8.3ms 8.3ms 1cyc 50 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP Mounted on epoxy board Ifsm t 150 100 50 100 IM=10mA 1ms 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) time 300us 10 Rth(j-c) 1 0.001 100 1.5 D=1/2 1 DC Sin(θ＝180) 0.5 0 0.1 0 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IF=0.5A FORWARD POWER DISSIPATION:Pf(W) 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 30 Ta=25℃ f=1MHz VR=10V n=10pcs 90 70 AVE:495.1mV 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ VR=60V n=30pcs 90 REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 530 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 1000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ta=125℃ f=1MHz Ta=75℃ 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.04 - Rev.E Data Sheet RB160M-60 0.15 D=1/2 0.1 DC 0.05 Sin(θ＝180) 0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V 2.5 2 DC Io t T VR D=t/T VR=30V Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 3 3 0.2 0A 0V 2.5 Io t 2 DC T VR D=t/T VR=30V Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 AVE:5.70kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A