This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3938G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching ■ Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing • Code SMini3-F2 • Marking Symbol: 2Y • Pin Name 1. Base 2. Emitter 3. Collector d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 40 V Collector-emitter voltage (E-B short) VCES 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 100 mA Peak collector current ICP 300 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol ICBO VCB = 40 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 hFE VCE = 1 V, IC = 10 mA VCE(sat) IC = 10 mA, IB = 1 mA VBE(sat) IC = 10 mA, IB = 1 mA on tin Forward current transfer ratio * ue Parameter Collector-base cutoff current (Emitter open) Di sc Collector-emitter saturation voltage Transition frequency e/ Base-emitter saturation voltage Conditions VCB = 10 V, IE = −10 mA, f = 200 MHz fT Min Typ 60 0.17 Max Unit 0.1 µA 0.1 µA 200 0.25 V 1 V 450 MHz Cob VCB = 10 V, IE = 0, f = 1 MHz 2 Turn-on time ton Refer to the measurement circuit 17 ns M ain te na nc Collector output capacitance (Common base, input open circuited) 6 pF Turn-off time toff 17 ns Storage time tstg 10 ns Pl Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 60 to 120 90 to 200 Publication date: April 2007 SJC00364AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3938G PC Ta Measurement circuit tstg test circuit 0.1 µF 200 0.1 µF VOUT VOUT A 220 Ω 50 Ω VIN = 10 V 3.3 kΩ VCC = 3 V 3.3 kΩ 50 Ω VIN = 10 V 0.1 µF 1 kΩ 910 Ω 90 Ω 500 Ω VCC = 10 V 500 Ω 50 Ω VBB = 2 V 160 120 M Di ain sc te on na tin nc ue e/ d VBB = −3 V Collector power dissipation PC (mW) ton , toff test circuit 10% VIN 10% VIN 10% 90% VOUT VOUT ton toff 10% 40 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 90% 80 tstg (Waveform at A) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) VCE(sat) IC Ta = 25°C 100 IB = 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VBE(sat) IC IC / IB = 10 10 1 25°C Ta = 75°C −25°C 0.1 100 10 1 10 Ta = −25°C 25°C 75°C 1 0.1 0.01 0.01 0.1 100 1 10 100 1 000 Collector current IC (mA) Collector current IC (mA) Di sc hFE IC 600 nc Ta = 75°C 200 25°C −25°C 100 0 0.1 1 10 Collector current IC (mA) 2 500 400 300 Pl 300 Cob VCB VCB = 10 V Ta = 25°C Transition frequency fT (MHz) 400 te na 500 M ain Forward current transfer ratio hFE e/ VCE = 1 V fT I E 600 100 200 100 0 −1 −10 −100 Emitter current IE (mA) SJC00364AED −1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob on tin ue Collector-emitter voltage VCE (V) 100 Base-emitter saturation voltage VBE(sat) (V) Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 6 IE = 0 f = 1 MHz Ta = 25°C 5 4 3 2 1 0 1 10 Collector-base voltage VCB (V) 100 1.25 ±0.10 1 (0.65) ±0.050 +0.05 3 2 (0.65) 0.13 −0.02 +0.05 1.30 ±0.10 0 to 0.10 ±0.10 ±0.10 pla in ea 0.90 2.10 ne clu se d pla m d m es f ht visi n a a o tp t f e :// ol d d d inte inte llow ww lo is is na n i(5°) w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P 0.425 ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy n s cle i (0.49) c.c t in o. for sta jp/ m ge en at . / ion . ed inu 0.30 −0.02 (0.89) on t (5°) Di sc ce / en an 2.00 ±0.20 Pl ain t M M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.