PANASONIC 2SD0602A

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD0602A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0710A
 Package
 Low collector-emitter saturation voltage VCE(sat)
 Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.

Code
Mini3-G1

Pin Name
1: Base
2: Emitter
3: Collector
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 Features
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Emitter-base voltage (Collector open)
VEBO
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
 Electrical Characteristics Ta = 25°C±3°C
Parameter
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 Absolute Maximum Ratings Ta = 25°C
Rating
Unit
60
V
50
V
5
V
500
mA
1
A
200
mW
150
°C
–55 to +150
°C
Symbol
 Marking Symbol: X
Conditions
Min
Typ
Max
Unit
VCBO
IC = 10 mA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
50
V
VEBO
IE = 10 mA, IC = 0
5
V
ICBO
VCB = 20 V, IE = 0
on
tin
Emitter-base voltage (Collector open)
ue
Collector-base voltage (Emitter open)
hFE1
en
Collector-emitter saturation voltage *1
int
VCE(sat)
fT
Ma
Transition frequency
*2
hFE2
an
Forward current transfer ratio *1
ce
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Collector-base cutoff current (Emitter open)
Collector output capacitance
(Common base, input open circuited)
Cob
VCE = 10 V, IC = 150 mA
85
VCE = 10 V, IC = 500 mA
40
IC = 300 mA, IB = 30 mA
0.35
VCB = 10 V, IE = -50 mA, f = 200 MHz
200
VCB = 10 V, IE = 0, f = 1 MHz
6
0.1
mA
340

0.60
15

V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Product of no-rank is not classified and have no indication for rank.
Publication date: October 2008
SJC00191DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0602A
2SD0602_ PC-Ta
IC  VCE
800
Ta = 25°C
Collector current IC (mA)
700
160
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
600
500
4 mA
400
3 mA
300
2 mA
200
VCE = 10 V
Ta = 25°C
600
400
200
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80
IC  IB
800
Collector current IC (mA)
240
Collector power dissipation PC (mW)
2SD0602_ IC-IB
2SD0602_ IC-VCE
PC  Ta
100
120
Ambient temperature Ta (°C)
2SD0602_ VCE(sat)-IC
10
1
Ta = 75°C
−25°C
25°C
10−2
10−2
10−1
1
10
isc
ce
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160
Ma
Transition frequency fT (MHz)
VCB = 10 V
Ta = 25°C
200
120
80
40
0
−1
12
16
0
20
0
−10
Emitter current IE (mA)
−100
4
8
Base current IB (mA)
2SD0602_ VBE(sat)-IC
2SD0602_ hFE-IC
102
FE
IC / IB = 10
250
200
Ta = −25°C
1
hFE  IC
300
10
150
VCE = 10 V
Ta = 75°C
25°C
−25°C
75°C
100
25°C
10−1
50
10−2
10−2
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2SD0602_ fT-IE
240
8
Collector-emitter voltage VCE (V)
ue
Collector current IC (mA)
fT  IE
4
VBE(sat)  IC
IC / IB = 10
10−1
0
10−1
1
0
10−2
10
10−1
1
Collector current IC (mA)
Collector current IC (mA)
2SD0602_ Cob-VCB
2SD0602_ VCER-RBE
Cob  VCB
12
10
VCER  RBE
120
IE = 0
f = 1 MHz
Ta = 25°C
10
IC = 2 mA
Ta = 25°C
CER
Collector-emitter saturation voltage VCE(sat) (V)
VCE(sat)  IC
102
0
160
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Collector-emitter voltage V
(V)
n.p bo yp Forward
(Resistor between B and E)
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current transfer ratio hc
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80
40
Base-emitter saturation voltage VBE(sat) (V)
0
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
2
1 mA
80
8
6
4
40
2
0
1
10
102
Collector-base voltage VCB (V)
SJC00191DED
0
1
10
102
103
Base-emitter resistance RBE (kΩ)
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1
2
(0.95)
(0.95)
1.9 ±0.1
2.90 −0.05
+0.20
10°
+0.3
−0.1
+0.2
−0.1
+0.25
−0.05
Mini3-G1
0.40 −0.05
+0.10
SJC00191DED
±0.2
+0.2
−0.3
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This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0602A
Unit: mm
0.16 −0.05
+0.10
3
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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