This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNRF2AL Silicon NPN epitaxial planar type Unit: mm 3 • Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package • Package: 0.6 mm × 1.0 mm (height 0.39 mm) 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 80 mA Total power dissipation PT 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.25±0.05 1 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.15±0.05 0.05±0.03 0.35±0.01 ■ Features 0.60±0.05 For digital circuits 3 2 0.05±0.03 0.65±0.01 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 1C Internal Connection R1 (4.7 kΩ) B R2 (4.7 kΩ) C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 2.0 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ Unit V V 0.1 µA 20 IC = 10 mA, IB = 0.3 mA Output voltage high level Max 0.25 4.9 V V 0.2 V Input resistance R1 −30% 4.7 +30% kΩ Resistance ratio R1 / R 2 0.8 0.1 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: May 2005 SJH00104BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNRF2AL IC VCE 0.8 mA 100 IB = 1.0 mA 0.9 mA 0.7 mA 0.5 mA 0.4 mA 80 0.3 mA 120 100 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C 80 60 40 0.6 mA 60 40 0.2 mA 20 0 20 0 0 80 40 120 Ambient temperature Ta (°C) 0 2 4 200 150 25°C −25°C 50 0 0.1 1 10 100 1 000 Collector current IC (mA) 1 Input voltage VIN (V) Ta = 85°C 0.1 −25°C 25°C 0.01 1 10 10 20 10 100 SJH00104BED 1 000 IO VIN 30 Collector-base voltage VCB (V) 1 100 100 40 VO = 5 V Ta = 25°C 10 1 0 Output current IO (mA) 2 1 Collector current IC (mA) f = 1 MHz Ta = 25°C VIN IO 1 12 10 VO = 0.2 V Ta = 25°C 0.1 0.1 10 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE 250 100 8 IC / IB = 10 Cob VCB Ta = 85°C VCE = 10 V 6 10 Collector-emitter voltage VCE (V) hFE IC 300 10 VCE(sat) IC 140 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 120 0 1 2 3 4 Input voltage VIN (V) 5 6 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). 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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. 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