Product specification DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS(ON): • 40 mΩ @VGS = -4.5V • 70 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SC-59 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) • • SC-59 Drain D Gate Source Internal Schematic TOP VIEW Maximum Ratings G S Pin Configuration @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Unit V V IDM IS Value -20 ±12 -4.6 -3.7 -18 2.0 Symbol PD RθJA TJ, TSTG Value 1.25 100 -55 to +150 Unit W °C/W °C ID A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 2 Product specification NEW PRODUCT DMP2066LSN Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 5) Symbol Min Typ Max Unit BVDSS IDSS IGSS VGS(th) ID (ON) -20 ⎯ ⎯ -0.6 -15 V μA nA V A RDS (ON) ⎯ ⎯ -1 ±100 -1.2 ⎯ 40 70 Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) Maximum Body-Diode Continuous Current (Note 1) DYNAMIC PARAMETERS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance gFS VSD IS ⎯ -0.5 ⎯ ⎯ ⎯ -0.96 ⎯ 29 55 9 -0.72 ⎯ Ciss Coss Crss Gate Resistance TJ = 25°C Static Drain-Source On-Resistance (Note 5) SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ Test Condition ID = -250μA, VGS = 0V VDS = -20V, VGS = 0V VDS = 0V, VGS = ±12V VDS = VGS, ID = -250μA VGS = -4.5V, VDS = -5V VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A VDS = -10V, ID = -4.5A IS = -2.1A, VGS = 0V ⎯ ⎯ -1.4 1.7 S V A ⎯ ⎯ ⎯ 820 200 160 ⎯ ⎯ ⎯ pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz RG ⎯ 2.5 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz QG QGS QGD td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10.1 1.5 4.3 4.4 9.9 28.0 23.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC VDS = -10V, VGS = -4.5V, ID = -4.5A ns VDS = -10V, VGS = -4.5V, ID = -1A, RG = 6.0Ω ⎯ 4. Test pulse width t = 300μs. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2