Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 ■ Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1 1 +0.2 15.25-0.2 5.60 +0.1 1.27-0.1 +0.2 8.7-0.2 ● Suitable for Switching Regulator and Motor Control 1. BASE +0.1 5.08-0.1 +0.2 0.4-0.2 2. COLLECTOR 3. EMITTER ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current -Continuous IC 8 A Collector Dissipation PC 2 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ Testconditons Min ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 1mA , IE = 0 700 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA , IB = 0 400 V Emitter-base Breakdown voltage V(BR)EBO IE = 1mA , IC = 0 9 V Collector-base cut-off current ICBO VCB = 700V , IE = 0 Emitter cut-off current IEBO VEB=7V,IC=0 DC current gain hFE 1 mA 100 μA VCE = 5V , IC = 2A 8 40 VCE = 5V , IC = 5A 5 30 Collector-emitter saturation voltage VCE(sat) IC =2A , IB = 0.4A 1 V Base-emitter saturation voltage VBE(sat) IC =2A , IB = 0.4A 1.2 V Collector output capacitance Cob 80 VCE=10,IE=0，f=0.1MHz pF Fall time tf IB1=-IB2=1A, IC=5A, VCC=125V 0.7 μs Storage time ts IB1=-IB2=1A, IC=5A, VCC=125V 3 μs Transition frequency fT VCE = 10 V , IC = 500 mA , f = 1 MHz 4 MHz ■ hFE Classification Rank hFE 8～15 15～20 http://www.twtysemi.com 20～25 25～30 30～35 35～40 [email protected] 4008-318-123 1 of 2 Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 3DD13007 ■ Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 2 of 2