PD - 96343B
AUTOMOTIVE MOSFET
AUIRF7343Q
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
Advanced Planar Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified*
Lead-Free, RoHS Compliant
S1
N-CHANNEL MOSFET
1
8
P-Ch
-55V
G1
2
7
D1
V(BR)DSS
55V
S2
3
6
D2
RDS(on) typ.
0.043Ω 0.095Ω
G2
4
5
D2
max. 0.050Ω 0.105Ω
P-CHANNEL MOSFET
Top View
ID
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
N-Ch
D1
4.7A
-3.4A
SO-8
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
g
g
c
e
d
Max.
Units
N-Channel
P-Channel
55
4.7
3.8
38
-55
-3.4
-2.7
-27
2.0
1.3
72
4.7
A
W
114
-3.4
0.20
± 20
5.0
V
-5.0
-55 to + 150
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
RθJA
Junction-to-Ambient
g
Parameter
Typ.
Max.
Units
–––
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
09/22/11
AUIRF7343Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(on)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ. Max. Units
55
-55
–––
–––
–––
–––
–––
–––
1.0
-1.0
7.9
3.3
–––
–––
–––
–––
–––
–––
–––
0.059
0.054
0.043
0.056
0.095
0.150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.050
0.065
0.105
0.170
–––
–––
–––
–––
2.0
-2.0
25
-25
± 100
Conditions
VGS = 0V, ID = 250μA
V
VGS = 0V, ID = -250μA
Reference to 25°C, ID = 1mA
V/°C
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A
VGS = 4.5V, ID = 3.8A
Ω
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = 250μA
V
VDS = VGS, ID = -250μA
VDS = 10V, ID = 4.5A
S
VDS = -10V, ID = -3.1A
VDS = 55V, VGS = 0V
VDS = -55V, VGS = 0V
μA
VDS = 55V, VGS = 0V, TJ = 55°C
VDS = -55V, VGS = 0V, TJ = 55°C
nA VGS = ± 20V
f
f
f
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
24
26
2.3
3.0
7.0
8.4
8.3
14
3.2
10
32
43
13
22
36
38
3.4
4.5
10
13
12
22
4.8
15
48
64
20
32
740
690
–––
190
210
71
–––
Conditions
N-Channel
ID = 4.5A VDS = 44V, VGS =10V
nC
f
P-Channel
ID = -3.1A VDS = -44V, VGS =-10V
ns
N-Channel
VDD = 28V, ID=1.0A, RG = 6.0Ω
RD = 28Ω
P-Channel
VDD = -28V, ID=-1.0A, RG = 6.0Ω
RD = 28Ω
f
N-Channel
VGS = 0V, VDS = 25V, f =1.0Mhz
pF
–––
P-Channel
VGS = 0V, VDS = -25V, f =1.0Mhz
86
Diode Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 22 )
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel I SD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
Min.
Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.70
-0.80
60
54
120
85
2.0
-2.0
38
-27
1.2
-1.2
90
80
170
130
Conditions
A
V
ns
nC
e
e
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IS = -2.0A, VGS = 0V
N-Channel
TJ = 25°C, IF = 2.0A di/dt = 100A/μs ƒ
P-Channel
TJ = 25°C, IF = -2.0A di/dt = 100A/μs ƒ
f
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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AUIRF7343Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
RoHS Compliant
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
SO-8
MSL1
Machine Model
Class M2 (200V)
(per AEC-Q101-002)
Human Body Model
Class H1A (500V)
(per AEC-Q101-001)
Charged Device
Model
Class C5 (1125V)
(per AEC-Q101-005)
†††
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRF7343Q
100
N-Channel
100
VGS
15V
12V
10V
8.0V
4.5V
6.0V
4.0V
3.5V
BOTTOM 3.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
3.0V
1
0.1
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
TOP
20μs PULSE WIDTH
TJ = 25 °C
1
10
10
3.0V
20μs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 25 ° C
TJ = 150 ° C
10
1
V DS = 25V
20μs PULSE WIDTH
3
4
5
6
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
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AUIRF7343Q
N-Channel
ID = 4.7A
R DS (on), Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
0.120
0.100
0.080
VGS = 4.5V
0.060
VGS = 10V
0.040
TJ , Junction Temperature ( °C)
20
30
40
Fig 6. Typical On-Resistance Vs. Drain
Current
200
0.10
0.08
I D = 4.7A
0.06
0.04
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
10
A
EAS , Single Pulse Avalanche Energy (mJ)
0.12
RDS(on) , Drain-to-Source On Resistance ( Ω )
10
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
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0
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
120
80
40
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
5
AUIRF7343Q
1200
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
C, Capacitance (pF)
N-Channel
Ciss
800
600
400
Coss
200
ID = 4.5A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
Crss
0
1
10
0
100
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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AUIRF7343Q
P-Channel
100
100
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
TOP
-3.0V
1
10
-3.0V
1
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
100
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
10
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -25V
20μs PULSE WIDTH
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
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1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
20μs PULSE WIDTH
TJ = 150 °C
0.1
0.1
7
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
7
AUIRF7343Q
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
R DS (on) , Drain-to-Source On Resistance (Ω)
ID = -3.4 A
(Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
P-Channel
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
TJ , Junction Temperature ( °C)
0
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
0.35
0.25
I D = -3.4 A
0.15
0.05
8
11
6
8
10
12
Fig 17. Typical On-Resistance Vs. Drain
Current
0.45
5
4
-ID , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
2
2
14
A
300
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
-V GS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
8
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
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AUIRF7343Q
P-Channel
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
960
Ciss
720
480
Coss
240
Crss
0
1
10
20
-VGS , Gate-to-Source Voltage (V)
1200
-VDS , Drain-to-Source Voltage (V)
VDS =-48V
VDS =-30V
VDS =-12V
16
12
8
4
0
100
ID = -3.1A
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
AUIRF7343Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
A1
MILLIMETERS
MAX
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF7343Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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11
AUIRF7343Q
Ordering Information
Base part
AUIRF7343Q
12
Package Type
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7343Q
AUIRF7343QTR
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AUIRF7343Q
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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