IRF AUIRFB8405

AUTOMOTIVE GRADE
AUIRFB8405
HEXFET® Power MOSFET
Features







Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and wide variety of other applications.
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
2.1mΩ
2.5mΩ
185A
ID (Package Limited)
120A
D
G




S
TO-220AB
AUIRFB8405
Applications

D
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
Base part number
G
Gate
Package Type
AUIRFB8405
TO-220
Standard Pack
Form
Tube
D
Drain
S
Source
Orderable Part Number
Quantity
50
AUIRFB8405
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
IDM
PD @TC = 25°C
Maximum Power Dissipation
VGS
Linear Derating Factor
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
185
131
120
904
163
1.1
± 20
-55 to + 175
Units
A
W
W/°C
V
°C
300
10lbf in (1.1N m)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFB8405
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
Single Pulse Avalanche Energy 
181
247
See Fig. 14, 15, 24a, 24b
Single Pulse Avalanche Energy Tested Value 
Avalanche Current
Repetitive Avalanche Energy 
mJ
A
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case 
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
R θJC
R θCS
R θJA
Typ.
Max.
Units
–––
0.50
–––
0.92
–––
62
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
40
–––
–––
2.2
–––
–––
–––
–––
–––
––– –––
0.026 –––
2.1
2.5
3.0
3.9
–––
1.0
––– 150
––– 100
––– -100
2.3
–––
V
V/°C
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 100A 
VDS = VGS, ID = 100μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
2
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Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
107
29
39
68
14
128
55
77
5193
754
519
878
1225
–––
161
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V 
ID = 100A, VDS =0V, VGS = 10V
VDD = 26V
ID = 100A
R G = 2.7Ω
VGS = 10V 
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V 
April 30, 2013
AUIRFB8405
Diode Characteristics
Symbol
IS
Parameter
VSD
dv/dt
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery 
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
Notes:
 Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.036mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
 ISD ≤ 100A, di/dt ≤ 1295A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
3
www.irf.com © 2013 International Rectifier
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 185
showing the
A
G
integral reverse
––– ––– 904
S
p-n junction diode.
–––
0.9
1.3
V TJ = 25°C, IS = 100A, VGS = 0V 
–––
1.7
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
44
–––
TJ = 25°C
VR = 34V,
ns
–––
45
–––
TJ = 125°C
IF = 100A
di/dt = 100A/μs 
–––
44
–––
TJ = 25°C
nC
–––
46
–––
TJ = 125°C
–––
1.9
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 Rθ is measured at TJ approximately 90°C.
 RθJC value shown is at time zero.
April 30, 2013
AUIRFB8405
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
4.5V
≤60μs PULSE WIDTH
BOTTOM
100
4.5V
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
100
T J = 175°C
T J = 25°C
10
VDS = 10V
≤60μs PULSE WIDTH
1.0
ID = 100A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2
3
4
5
6
7
8
9
Fig 3. Typical Transfer Characteristics
100000
VGS, Gate-to-Source Voltage (V)
ID= 100A
C oss = C ds + C gd
Ciss
Coss
Crss
1000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
10000
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
www.irf.com © 2013 International Rectifier
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFB8405
1000
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100
T J = 25°C
10
1000
100μsec
1msec
100
Limited by package
10
10msec
1
VGS = 0V
0.1
1.0
0.2
0.6
1.0
1.4
1.8
0.1
2.2
ID, Drain Current (A)
Limited By Package
150
100
50
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
200
50
100
50
Id = 1.0mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
0.9
EAS , Single Pulse Avalanche Energy (mJ)
800
0.8
0.7
0.6
Energy (μJ)
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
0.5
0.4
0.3
0.2
0.1
0.0
ID
17A
36A
BOTTOM 100A
700
TOP
600
500
400
300
200
100
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
5
DC
Tc = 25°C
Tj = 175°C
Single Pulse
www.irf.com © 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFB8405
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
200
180
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = ΔT/ ZthJC
ΔT/ [1.3·BV·Zth]
Iav = 2Δ
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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April 30, 2013
8.0
4.5
ID = 100A
VGS(th) , Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFB8405
6.0
4.0
T J = 125°C
2.0
TJ = 25°C
0.0
4.0
3.5
3.0
ID = 100μA
ID = 1.0mA
2.5
ID = 1.0A
2.0
1.5
1.0
4
6
8
10
12
14
16
18
20
-75 -50 -25
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
200
IF = 60A
V R = 34V
8
IF = 60A
V R = 34V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
150
QRR (nC)
6
4
100
50
2
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
12
200
10
IF = 100A
V R = 34V
8
TJ = 25°C
TJ = 125°C
IF = 100A
V R = 34V
TJ = 25°C
TJ = 125°C
150
QRR (nC)
IRRM (A)
25 50 75 100 125 150 175
Fig 17. Threshold Voltage vs. Temperature
10
IRRM (A)
0
TJ , Temperature ( °C )
6
100
4
50
2
0
0
0
200
400
600
800
1000
diF /dt (A/μs)
7
Fig. 20 - Typical Recovery Current vs. dif/dt
www.irf.com © 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 30, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFB8405
60
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
50
VGS = 8.0V
VGS =10V
40
30
20
10
0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
8
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April 30, 2013
AUIRFB8405
Driver Gate Drive
D.U.T

+

-
-

*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24a. Unclamped Inductive Test Circuit
RD
VDS
Fig 24b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 μs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
9
www.irf.com © 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 30, 2013
AUIRFB8405
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB8405
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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April 30, 2013
AUIRFB8405
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
TO-220
Machine Model
N/A
Class M3 (+/- 400V)††
AEC-Q101-002
Human Body Model
ESD
Class H1C (+/- 2000V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)††
AEC-Q101-005
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
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April 30, 2013
AUIRFB8405
IMPORTANT NOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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practice. IR is not responsible or liable for any such statements.
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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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April 30, 2013