PD - 97677
AUTOMOTIVE GRADE
AUIRF3004WL
HEXFET® Power MOSFET
Features
l
l
l
l
l
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Advanced Process Technology
Ultra Low On-Resistance
50% Lower Lead Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
40V
RDS(on) typ.
max.
G
S
1.27mΩ
1.40mΩ
ID (Silicon Limited)
386A c
ID (Package Limited)
240A
Description
Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower
lead resistance and delivering over 20% lower Rds(on) when
compared with a traditional TO-262 package housing the same
silicon die. This greatly helps in reducing condition losses, achieving
higher current levels or enabling a system to run cooler and have
improved efficiency. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in
Automotive and other applications.
S
G
D
TO-262 WideLead
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
d
f
e
d
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
c
c
386
273
240
1544
375
2.5
± 20
470
See Fig. 14, 15, 22a, 22b,
6.1
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC
Junction-to-Case
j
Typ.
Max.
Units
–––
0.40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
05/13/11
AUIRF3004WL
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40
–––
–––
2.0
330
–––
–––
–––
–––
–––
––– –––
0.038 –––
1.27 1.40
–––
4.0
––– –––
2.7
–––
–––
20
––– 250
––– 100
––– -100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 195A
V VDS = VGS, ID = 250μA
S VDS = 10V, ID = 195A
Ω
VDS = 40V, VGS = 0V
μA
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Effective Output Capacitance (Energy Related) –––
–––
Effective Output Capacitance (Time Related)
140
53
49
91
19
220
90
130
9450
1930
975
2330
2815
210
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
g
g
nC
ns
Conditions
ID = 232A
VDS =20V
VGS = 10V
ID = 232A, VDS =0V, VGS = 10V
VDD = 26V
ID = 232A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 32V
ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 32V , See Fig.11
VGS = 0V, VDS = 0V to 32V
g
g
g
pF
i
h
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
Min. Typ. Max. Units
–––
–––
––– 386
–––
c
1544
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
VR = 34V,
TJ = 125°C
IF = 232A
di/dt = 100A/μs
TJ = 25°C
g
S
––– –––
1.3
V
–––
41
62
ns
–––
51
77
–––
62
93
nC
TJ = 125°C
–––
99
149
–––
2.3
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
Notes:
Calculated continuous current based on maximum allowable junction ISD ≤ 232A, di/dt ≤ 907A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
temperature. Package limitation current is 240A. Note that current
Pulse width ≤ 400μs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with
Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.(Refer to AN-1140
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
http://www.irf.com/technical-info/appnotes/an-1140.pdf
Coss while VDS is rising from 0 to 80% VDSS.
Repetitive rating; pulse width limited by max. junction
Rθ is measured at TJ approximately 90°C.
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.018mH
RG = 50Ω, IAS = 232A, VGS =10V. Part not recommended for use
above this value.
2
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AUIRF3004WL
10000
10000
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
4.5V
10
≤60μs PULSE WIDTH
1000
BOTTOM
100
4.5V
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
10
0.1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
10
100
1000
Fig 2. Typical Output Characteristics
10000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
T J = 25°C
10
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
ID = 195A
VGS = 10V
1.5
1.0
0.5
0.0
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 232A
C oss = C ds + C gd
C, Capacitance (pF)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
Ciss
Coss
10000
Crss
1000
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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0
20 40 60 80 100 120 140 160 180 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
AUIRF3004WL
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10000
1000
T J = 175°C
100
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
Limited by package
10
1msec
1
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
VSD, Source-to-Drain Voltage (V)
300
200
100
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
ID, Drain Current (A)
Limited By Package
50
10
100
Fig 8. Maximum Safe Operating Area
400
25
1
VDS, Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
T C , Case Temperature (°C)
56
Id = 5mA
54
52
50
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
EAS , Single Pulse Avalanche Energy (mJ)
2000
1.8
1.6
1.4
Energy (μJ)
10msec
0.1
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ID
TOP
45A
86A
BOTTOM 232A
1800
1600
1400
1200
1000
800
600
400
200
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
DC
Tc = 25°C
Tj = 175°C
Single Pulse
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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AUIRF3004WL
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
τJ
1E-005
τJ
τ1
R2
R2
τ2
τ1
R3
R3
τ3
τ2
τC
τ
τ3
Ri (°C/W) τi (sec)
0.2063 0.017817
0.0394 0.000116
0.1534
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
R1
R1
0.002614
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
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5
AUIRF3004WL
EAR , Avalanche Energy (mJ)
500
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figure 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 232A
400
300
200
100
0
25
50
75
100
125
150
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
175
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
VGS(th) , Gate threshold Voltage (V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
6
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AUIRF3004WL
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD
Fig 22b. Unclamped Inductive Waveforms
VGS
VDS
90%
+
VDD D.U.T
10%
VGS
VDS
Second Pulse Width < 1μs
Duty Factor < 0.1%
td(off)
Fig 23a. Switching Time Test Circuit
tf
td(on)
tr
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
1K
20K
VCC
Vgs(th)
S
Qgodr
Fig 24a. Gate Charge Test Circuit
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Qgd
Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
7
AUIRF3004WL
TO-262 WideLead Package Outline
Dimensions are shown in millimeters (inches)
TO-262 WideLead Part Marking Information
Part Number
AUIRF3004WL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF3004WL
Ordering Information
Base part number
AUIRF3004WL
www.irf.com
Package Type
TO-262 WideLead
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRF3004WL
9
AUIRF3004WL
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
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any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any
such statements.
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intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or
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and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
10
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