CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16323Q3 FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3mm x 3.3mm Plastic Package PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.2 nC Qgd Gate Charge Gate to Drain RDS(on) Vth • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control or Synchronous FET Applications DESCRIPTION Top View S 1 8 D S 2 7 D S 3 6 D G 4 mΩ VGS = 4.5V 4.4 mΩ VGS = 8V 3.8 mΩ Threshold Voltage 1.1 V ORDERING INFORMATION Package Media CSD16323Q3 SON 3.3 × 3.3 Plastic Package 13-inch reel Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A Continuous Drain Current(1) 21 A Pulsed Drain Current, TA = 25°C(2) 112 A ID The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. Drain to Source On Resistance nC 5.4 Device APPLICATIONS • 1.1 VGS = 3V IDM (1) PD Power Dissipation 3 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 50A, L = 0.1mH, RG = 25Ω 125 mJ (1) RθJA = 43°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% D 5 D P0095-01 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2011, Texas Instruments Incorporated CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com RDS(ON) vs VGS Gate Charge 10 ID = 24A 14 12 10 TC = 125°C 8 ID = 24A VDS = 12.5V 9 VG − Gate Voltage − V RDS(on) − On-State Resistance − mW 16 6 4 8 7 6 5 4 3 2 2 TC = 25°C 1 0 0 0 1 2 3 4 5 6 7 8 VGS − Gate to Source Voltage − V 9 0 10 2 4 6 8 10 12 14 Qg − Gate Charge − nC G006 G003 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/-8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA RDS(on) gfs Drain to Source On Resistance Transconductance 25 0.9 V 1 μA 100 nA 1.1 1.4 V VGS = 3V, ID = 24A 5.4 7.2 mΩ VGS = 4.5V, ID = 24A 4.4 5.5 mΩ VGS = 8V, ID = 24A 3.8 4.5 mΩ VDS = 12.5V, ID = 24A 108 S Dynamic Characteristics CISS Input Capacitance 1020 1300 pF COSS Output Capacitance CRSS Reverse Transfer Capacitance 740 960 pF 50 65 Rg pF Series Gate Resistance 1.4 2.8 Ω Qg Gate Charge Total (4.5V) 6.2 8.4 nC Qgd Gate Charge Gate to Drain 1.1 nC Qgs Gate Charge Gate to Source 1.8 nC Qg(th) Gate Charge at Vth 1 nC QOSS Output Charge 14 nC td(on) Turn On Delay Time 5.3 ns tr Rise Time 15 ns td(off) Turn Off Delay Time 13 ns tf Fall Time 6.3 ns VGS = 0V, VDS = 12.5V, f = 1MHz VDS = 12.5V, ID = 24A VDS = 12.5V, VGS = 0V VDS = 12.5V, VGS = 4.5V ID = 24A RG = 2Ω Diode Characteristics VSD Diode Forward Voltage IS = 24A, VGS = 0V Qrr Reverse Recovery Charge VDD = 12.5V, IF = 24A, di/dt = 300A/μs 21 nC trr Reverse Recovery Time VDD = 12.5V, IF = 24A, di/dt = 300A/μs 16 ns 2 Submit Documentation Feedback 0.85 1 V Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com THERMAL INFORMATION THERMAL METRIC (1) (2) CSD16323Q3 8 PINS θJA Junction-to-ambient thermal resistance 42.0 θJCtop Junction-to-case (top) thermal resistance 20.6 θJB Junction-to-board thermal resistance 8.8 ψJT Junction-to-top characterization parameter 0.3 ψJB Junction-to-board characterization parameter 8.7 θJCbot Junction-to-case (bottom) thermal resistance 0.1 (1) (2) UNITS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator. Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 3 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 GATE www.ti.com GATE Source Source Max RθJA = 162°C/W when mounted on minimum pad area of 2 oz. Cu. Max RθJA = 58°C/W when mounted on 1 inch2 of 2 oz. Cu. DRAIN DRAIN M0161-02 M0161-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – NormalizedThermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 0.01 P 0.02 0.01 t1 t2 Typical RqJA = 138°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA Single Pulse 0.001 0.001 0.01 0.1 1 10 100 1k tP – Pulse Duration–s G012 Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 60 60 50 VGS = 4.5V 40 ID − Drain Current − A ID − Drain Current − A VDS = 5V VGS = 8V 50 VGS = 2V VGS = 3.5V 30 20 VGS = 2.5V 10 40 TC = 125°C 30 TC = 25°C 20 TC = −55°C 10 0 0.0 0 0.5 1.0 1.5 1 2.0 VDS − Drain to Source Voltage − V 1.25 1.75 2 2.25 2.5 VGS − Gate to Source Voltage − V G001 Figure 2. Saturation Characteristics G002 Figure 3. Transfer Characteristics 10 2.5 f = 1MHz VGS = 0V ID = 24A VDS = 12.5V 9 8 C − Capacitance − nF VG − Gate Voltage − V 1.5 7 6 5 4 3 2.0 CISS = CGD + CGS 1.5 COSS = CGD + CGS 1.0 CRSS = CGD 0.5 2 1 0 0.0 0 2 4 6 8 10 12 14 Qg − Gate Charge − nC 0 5 20 25 G004 Figure 5. Capacitance 16 RDS(on) − On-State Resistance − mW 1.4 VGS(th) − Threshold Voltage − V 15 VDS − Drain to Source Voltage − V G003 Figure 4. Gate Charge ID = 250mA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 10 ID = 24A 14 12 10 TC = 125°C 8 6 4 2 TC = 25°C 0 −25 25 75 125 175 TC − Case Temperature − °C 0 1 3 4 5 6 7 8 9 10 VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 2 G006 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 5 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 100 ID = 24A VGS = 10V 1.4 ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 10 1 TC = 125°C 0.1 TC = 25°C 0.01 0.001 0.0001 −25 25 75 125 175 TC − Case Temperature − °C 0.0 0.2 0.6 0.8 VSD − Source to Drain Voltage − V G007 Figure 8. Normalized On Resistance vs. Temperature 1.0 G008 Figure 9. Typical Diode Forward Voltage 1000 1k 1ms 10ms 100ms 1s DC I(AV) − Peak Avalanche Current − A IDS - Drain-to-Source Current - A 0.4 100 10 Area Limited by Rds(on) 1 0.1 Single Pulse Typical RthetaJA = 138ºC/W(min Cu) 0.01 0.01 0.1 1 10 TC = 125°C 10 1 0.01 100 VDS - Drain-to-Source Voltage - V TC = 25°C 100 0.1 1 10 100 G001 t(AV) − Time in Avalanche − ms Figure 10. Maximum Safe Operating Area G010 Figure 11. Single Pulse Unclamped Inductive Switching 80 ID − Drain Current − A 70 60 50 40 30 20 10 0 −50 −25 0 25 50 75 100 125 TC − Case Temperature − °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature 6 Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com MECHANICAL DATA Q3 Package Dimensions D2 D H L 1 2 7 3 6 4 5 5 4 3 b E2 E 6 e E 7 2 8 8 1 q L1 Top View A1 Bottom View A Side View c D Front View M0142-01 DIM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX A 0.950 1.000 1.100 0.037 0.039 0.043 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 c 0.150 0.200 0.250 0.006 0.008 0.010 D 3.200 3.300 3.400 0.126 0.130 0.134 D1 – – – – – – D2 1.650 1.750 1.800 0.065 0.069 0.071 E 3.200 3.300 3.400 0.126 0.130 0.134 E1 – – – – – – E2 2.350 2.450 2.550 0.093 0.096 0.100 e 0.650 TYP 0.026 H 0.35 0.450 0.550 0.014 0.018 0.022 L 0.35 0.450 0.550 0.014 0.018 0.022 L1 – – – – – – θ – – – – – – Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 7 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com 2.31 1 8 8 1 0.65 Typ. 2.45 5 4 5 3.50 0.56 0.41 4 0.50 Typ. Recommended PCB Pattern 0.63 M0143-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. 1.75 ±0.10 Q3 Tape and Reel Information 4.00 ±0.10 (See Note 1) Ø 1.50 +0.10 –0.00 3.60 1.30 3.60 5.50 ±0.05 12.00 +0.30 –0.10 8.00 ±0.10 2.00 ±0.05 M0144-01 Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm 3. Material:black static dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and Convection) PbF Reflow Compatible 8 Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A Page • Changed RDS(on) - VGS = 3V, ID = 24A MAX value From: 6.5 To: 7.2 ................................................................................... 2 • Deleted the Package Marking Information section ............................................................................................................... 8 Changes from Revision A (April 2010) to Revision B Page • Replaced the THERMAL CHARACTERISTICS table with the new Thermal Information Table .......................................... 3 • Replaced Figure 10 - Maximum Safe Operating Area .......................................................................................................... 6 Submit Documentation Feedback Copyright © 2009–2011, Texas Instruments Incorporated Product Folder Link(s): CSD16323Q3 9 PACKAGE MATERIALS INFORMATION www.ti.com 6-Jun-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD16323Q3 Package Package Pins Type Drawing SON DQG 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 3.6 B0 (mm) K0 (mm) P1 (mm) 3.6 1.2 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 6-Jun-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD16323Q3 SON DQG 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Audio www.ti.com/audio Communications and Telecom www.ti.com/communications Amplifiers amplifier.ti.com Computers and Peripherals www.ti.com/computers Data Converters dataconverter.ti.com Consumer Electronics www.ti.com/consumer-apps DLP® Products www.dlp.com Energy and Lighting www.ti.com/energy DSP dsp.ti.com Industrial www.ti.com/industrial Clocks and Timers www.ti.com/clocks Medical www.ti.com/medical Interface interface.ti.com Security www.ti.com/security Logic logic.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Power Mgmt power.ti.com Transportation and Automotive www.ti.com/automotive Microcontrollers microcontroller.ti.com Video and Imaging RFID www.ti-rfid.com OMAP Mobile Processors www.ti.com/omap Wireless Connectivity www.ti.com/wirelessconnectivity TI E2E Community Home Page www.ti.com/video e2e.ti.com Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2011, Texas Instruments Incorporated