TI CSD75301W1015

CSD75301W1015
www.ti.com
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD75301W1015
FEATURES
1
•
•
•
•
•
•
•
PRODUCT SUMMARY
Dual P-Ch MOSFETs
Common Source Configuration
Small Footprint 1mm × 1.5mm
Low Profile – 0.62mm
Ultra Low Qg and Qgd
Pb Free / RoHS Compliant
Halogen Free
(Per MOSFET unless otherwise stated)
VDS
Drain to Source Voltage
–20
V
Qg
Gate Charge Total (4.5V)
1.5
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
VGS(th)
mΩ
VGS = –2.5V
105
mΩ
VGS = –4.5V
80
mΩ
–0.7
V
ORDERING INFORMATION
Battery Management
Load Switch
Battery Protection
Device
Package
CSD75301W1015
1 × 1.5 Wafer
Level Package
DESCRIPTION
Media
7-inch reel
Qty
Ship
3000
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View
D2
G2
S
S
G1
D1
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
–20
V
VGS
Gate to Source Voltage
±8
V
ID
Continuous Drain Current, TC = 25°C(1) (2)
–1.2
A
IDM
Pulsed Drain Current, TA = 25°C(1) (2) (3)
–17.5
A
PD
Power Dissipation(1) (2)
0.8
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
(1) Per device, both devices in conduction.
(2) RqJA = 74°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(3) Pulse width ≤300ms, duty cycle ≤2%
RDS(ON) vs VGS
Gate Charge
300
6
ID = −1A
250
5
200
−VG − Gate Voltage − V
RDS(on) − On-State Resistance − mΩ
nC
150
Voltage threshold
APPLICATIONS
•
•
•
0.3
VGS = –1.8V
TJ = 125°C
150
100
TJ = 25°C
50
1
2
4
3
2
1
0
0
ID = −1A
VDS = −10V
3
4
5
−VGS − Gate to Source Voltage − V
6
G006
0
0.00
0.25
0.50
0.75
1.00
1.25
Qg − Gate Charge − nC
1.50
1.75
2.00
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
CSD75301W1015
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
www.ti.com
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated) (Per MOSFET unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = –250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = –16V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = –8V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = –250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
–20
V
–1
mA
–100
nA
–0.7
–1.0
V
VGS = –1.8V, ID = –1A
150
190
mΩ
VGS = –2.5V, ID = –1A
105
135
mΩ
VGS = –4.5V, ID = –1A
80
100
mΩ
VDS = –10V, ID = –1A
5.2
–0.4
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg
Gate Charge Total (–4.5V)
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = –10V, f = 1MHz
150
195
pF
67
87
pF
24
31
pF
1.5
2.1
nC
0.3
nC
0.28
nC
0.12
nC
VDS = –9.5V, VGS = 0V
1.1
nC
3
ns
VDS = –10V, VGS = –4.5V, ID = –1A
RG = 30Ω
1.7
ns
38
ns
16
ns
VDS = –10V, ID = –1A
Diode Characteristics
VSD
Diode Forward Voltage
IS = –1A, VGS = 0V
Qrr
Reverse Recovery Charge
Vdd = –9.5V, IF = –1A, di/dt = 200A/ms
–0.81
2
–1
nC
V
trr
Reverse Recovery Time
Vdd = –9.5V, IF = –1A, di/dt = 200A/ms
7.5
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJC
R qJA
(1)
(2)
(3)
2
MAX
UNIT
(2)
136
°C/W
(2) (3)
93
°C/W
Thermal Resistance Junction to Ambient (1)
Thermal Resistance Junction to Ambient
MIN
TYP
Device mounted on FR4 material with Minimum Cu mounting area.
Measured with both devices biased in a parallel condition.
Device mounted on FR4 material with 1in2 of 2 oz Cu.
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD75301W1015
CSD75301W1015
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SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
P-Chan 1.0x1.5 CSP TTA MAX Rev1
P-Chan 1.0x1.5 CSP TTA MIN Rev1
Max RqJA = 136°C/W
when mounted on
minimum pad area of 2
oz. Cu.
Max RqJA = 93°C/W
when mounted on
1inch2 of 2 oz. Cu.
M0155-01
M0156-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – Normalized Thermal Impedance
10
1
0.5
0.3
0.1
0.01
0.1
0.05
Duty Cycle = t1/t2
0.02
0.01
P
t1
Single Pulse
t2
0.001
0.0001
0.00001
RqJA = 109°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
0.0001
0.001
0.01
0.1
1
10
100
1k
tp – Pulse Duration – s
G012
Figure 1. Transient Thermal Impedance
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Product Folder Link(s): CSD75301W1015
3
CSD75301W1015
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
5
5.0
VDS = −5V
VGS = −4.5V
4.0
−ID − Drain Current − A
−ID − Drain Current − A
4.5
3.5
VGS = −3V
3.0
VGS = −1.5V
VGS = −2.5V
2.5
2.0
1.5
VGS = −2V
1.0
4
3
TJ = 125°C
2
TJ = 25°C
1
TJ = −55°C
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.50
3.0
−VDS − Drain to Source Voltage − V
1.25
1.50
1.75
2.00
2.25
2.50
G002
Figure 3. Transfer Characteristics
6
200
ID = −1A
VDS = −10V
f = 1MHz
VGS = 0V
180
160
C − Capacitance − pF
−VG − Gate Voltage − V
1.00
−VGS − Gate to Source Voltage − V
G001
Figure 2. Saturation Characteristics
5
0.75
4
3
2
140
COSS = CDS + CGD
120
CISS = CGD + CGS
100
80
60
CRSS = CGD
40
1
20
0
0.00
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Qg − Gate Charge − nC
0
5
G004
300
RDS(on) − On-State Resistance − mΩ
−VGS(th) − Threshold Voltage − V
20
Figure 5. Capacitance
1.0
ID = −250µA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
ID = −1A
250
200
TJ = 125°C
150
100
TJ = 25°C
50
0
−25
25
75
125
175
TJ − Junction Temperature − °C
Figure 6. Threshold Voltage vs. Temperature
4
15
−VDS − Drain to Source Voltage − V
G003
Figure 4. Gate Charge
0.0
−75
10
0
1
2
3
4
5
−VGS − Gate to Source Voltage − V
G005
6
G006
Figure 7. On Resistance vs. Gate Voltage
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD75301W1015
CSD75301W1015
www.ti.com
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
10
1.4
ID = −1A
VGS = −4.5V
−ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
1
TJ = 125°C
0.1
TJ = 25°C
0.01
0.001
0.0001
−25
25
75
125
TJ − Case Temperature − °C
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−VSD − Source to Drain Voltage − V
G007
Figure 8. On Resistance vs. Temperature
G008
Figure 9. Typical Diode Forward Voltage
1.4
100
−ID − Drain Current − A
−ID − Drain Current − A
1.2
10
1ms
1
10ms
0.1
0.01
0.1
Area Limited
by RDS(on)
100ms
1s
DC
Single Pulse
RθJA = 109°C/W (min Cu)
1
10
Figure 10. Maximum Safe Operating Area
0.8
0.6
0.4
0.2
100
−VDS − Drain To Source Voltage − V
1.0
0.0
−50
−25
0
25
50
75
100
125
150
175
TJ − Junction Temperature − °C
G009
G011
Figure 11. Maximum Drain Current vs. Temperature
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD75301W1015
5
CSD75301W1015
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
www.ti.com
MECHANICAL DATA
CSD75301W1015 Package Dimensions
Pin 1
Mark
1
Solder Ball
Ø 0.31 ±0.075
2
1
A
B
15.00
B
1.00
+0.00
–0.10
0.50
A
2
Pin 1
Mark
C
C
1.00
+0.00
–0.10
0.50
Side View
Bottom View
0.04
0.62 Max
0.38
Top View
0.62 Max
Seating Plate
Front View
M0157-01
NOTE: All dimensions are in mm (unless othersse specified)
Pinout
6
POSITION
DESIGNATION
B1, B2
Source
C1
Gate1
C2
Drain1
A2
Gate2
A1
Drain2
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD75301W1015
CSD75301W1015
www.ti.com
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
Land Pattern Recommendation
Ø 0.25
1
2
1.00
0.50
A
B
C
0.50
M0158-01
NOTE: All dimensions are in mm (unless othersse specified)
Tape and Reel Information
4.00 ±0.10
Ø 1.50 ±0.10
4.00 ±0.10
Ø 0.60
0.86 ±0.05
+0.05
–0.10
1.65 ±0.05
2° Max
3.50 ±0.05
8.00
+0.30
–0.10
1.75 ±0.10
2.00 ±0.05
0.254 ±0.02
1.19 ±0.05
2° Max
M0159-01
NOTE: All dimensions are in mm (unless othersse specified)
Submit Documentation Feedback
Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD75301W1015
7
CSD75301W1015
SLPS212B – AUGUST 2009 – REVISED NOVEMBER 2009
www.ti.com
REVISION HISTORY
Changes from Original (August 2009) to Revision A
•
Changed location of the Pin 1 indicator dot in the pin out illustration. .................................................................................. 1
Changes from Revision A (November 2009) to Revision B
•
8
Page
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): CSD75301W1015
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