CSD25401Q3 www.ti.com SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET™ Power MOSFETs Check for Samples: CSD25401Q3 FEATURES 1 • • • • • • • 2 Table 1. PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3mm x 3.3mm Plastic Package VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 8.8 nC Qgd Gate Charge Gate to Drain 2.1 RDS(on) Drain to Source On Resistance Vth Threshold Voltage nC VGS = –2.5V 13.5 mΩ VGS = –4.5V 8.8 mΩ –0.85 V ORDERING INFORMATION APPLICATIONS • • • • DC-DC Converters Battery Management Load Switch Battery Protection Device Package Media Qty Ship CSD25401Q3 SON 3 × 3 Plastic Package 13-inch reel 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion load management applications. The SON 3×3 package offers excellent thermal performance for the size of the package. Top View D 1 8 S D 2 7 S D 3 6 S S 4 VALUE UNIT VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage +12 / -12 V Continuous Drain Current, TC = 25°C –60 A Continuous Drain Current(1) –14 A IDM Pulsed Drain Current, TA = 25°C(2) –82 A PD Power Dissipation(1) 2.8 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C ID (1) RqJA = 45°C/W on 1inch2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300µs , duty cycle ≤2% 5 G S RDS(ON) vs VGS Gate Charge 10 ID = −10A 20 TC = 125°C 15 10 TC = 25°C 5 ID = −10A VDS = −10V 9 25 −VG − Gate Voltage − V RDS(on) − On-State Resistance − mW 30 8 7 6 5 4 3 2 1 0 0 0 1 2 3 4 5 6 7 8 −VGS − Gate to Source Voltage − V 9 10 G006 0 2 4 6 8 10 Qg − Gate Charge − nC 12 14 16 G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD25401Q3 SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = –250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = –20V to –16V IGSS Gate to Source Leakage Current VDS = 0V, VGS = ±12V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = –250mA RDS(on) Drain to Source On Resistance gfs Transconductance –20 V –1 mA –100 nA –0.85 –1.2 V VGS = –2.5V, ID = –10A 13.5 18.2 mΩ VGS = –4.5V, ID = –10A 8.8 11.7 mΩ VDS = –15V, ID = –10A 43 –0.6 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance 180 230 pF Qg Gate Charge Total (4.5V) 8.8 12.3 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = –10V, f = 1MHz VDS = –10V, ID = –10A VDS = –10V, VGS = 0V VDS = –10V, VGS = –4.5V, ID = –10A , RG = 5.1Ω 1070 1400 pF 560 730 pF 2.1 nC 2.1 nC 0.9 nC 8.2 nC 8.1 ns 3.9 ns 13.5 ns 12.6 ns Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IS = –10A, VGS = 0V –0.7 VDD = –12.5V, IF = –10A, di/dt = 300A/ms 17.4 –1 nC V 21 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJC Thermal Resistance Junction to Case (1) R qJA Thermal Resistance Junction to Ambient (1) (1) (2) 2 (2) (2) MIN TYP MAX UNIT 2.8 °C/W 57 °C/W R qJC is determined with the device mounted on a 1 inch2 Cu (2 oz.) pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R qJC is specified by design while R qJA is determined by the user’s board design. Device mounted on FR4 Material with 1 inch2 of Cu (2 oz.). Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 CSD25401Q3 www.ti.com SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 GATE GATE DRAIN DRAIN Max RqJA = 158°C/W when mounted on minimum pad area of 2 oz. Cu. Max RqJA = 57°C/W when mounted on 1inch2 of 2 oz. Cu. SOURCE SOURCE M0137-02 M0137-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – NormalizedThermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 0.01 P 0.02 0.01 t1 t2 o R qJA = 126 C/W (min Cu) TJ = P x ZqJA x R qJA Single Pulse 0.001 0.001 0.01 0.1 1 10 100 tP – Pulse Duration–s 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 3 CSD25401Q3 SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 50 50 45 VGS = −4.5V 40 35 VGS = −2V VGS = −3V 30 -ID − Drain Current − A −ID − Drain Current − A 45 25 20 VGS = −2.5V 15 10 VDS = -5V 40 35 30 25 TC = 125°C 20 15 TC = 25°C 10 VGS = −1.5V 5 5 0 0 0.5 0 0.5 1 1.5 2 2.5 3 −VDS − Drain to Source Voltage − V TC = −55°C 1.75 2 2.25 2.5 G002 1400 ID = −10A VDS = −10V 9 f = 1MHz VGS = 0V 1200 C − Capacitance − pF 8 7 6 5 4 3 2 1000 COSS = CDS + CGD CISS = CGD + CGS 800 600 CRSS = CGD 400 200 1 0 0 0 2 4 6 8 10 12 14 16 Qg − Gate Charge − nC 0 2 4 G003 8 10 12 14 16 18 20 G004 Figure 5. Capacitance 30 RDS(on) − On-State Resistance − mW 1.4 ID = −250mA 1.2 1 0.8 0.6 0.4 0.2 0 −75 6 −VDS − Drain to Source Voltage − V Figure 4. Gate Charge −VGS(th) − Threshold Voltage − V 1.5 Figure 3. Transfer Characteristics 10 ID = −10A 25 20 TC = 125°C 15 10 TC = 25°C 5 0 −25 25 75 125 175 TC − Case Temperature − °C 0 1 2 3 4 5 6 7 8 9 −VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 4 1.25 -VGS − Gate to Source Voltage − V G001 Figure 2. Saturation Characteristics −VG − Gate Voltage − V 1 0.75 10 G006 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 CSD25401Q3 www.ti.com SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 1.4 100 ID = −10A VGS = −4.5V −ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1 0.8 0.6 0.4 0.2 0 −75 10 1 TC = 125°C 0.1 TC = 25°C 0.01 0.001 −25 25 75 125 175 TC − Case Temperature − °C 0 0.2 0.4 0.6 0.8 1 1.2 −VSD − Source to Drain Voltage − V G007 Figure 8. On Resistance vs. Temperature G008 Figure 9. Typical Diode Forward Voltage 70 1k −ID − Drain Current − A -ID − Drain Current − A 60 100 100ms 10 1ms 10ms 1 0.1 0.01 0.01 Area Limited by RDS(on) 100ms Single Pulse RθJA = 126°C/W (min Cu) 0.1 1 100 -VDS − Drain To Source Voltage − V Figure 10. Maximum Safe Operating Area 40 30 20 10 DC 10 50 0 −50 −25 0 25 50 75 100 125 150 175 TC − Case Temperature − °C G009 G011 Figure 11. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 5 CSD25401Q3 SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA CSD25401Q3 Package Dimensions D2 D H L 1 2 7 3 6 L1 Top View 4 5 5 4 3 b E2 E 6 e E 7 2 8 8 1 q A1 Bottom View Side View Pinout 1,2,3 Gate 4 Source 5,6,7,8 A Drain c D Front View M0142-01 DIM MILLIMETERS MIN NOM MAX MIN NOM MAX A 0.950 1.000 1.100 0.037 0.039 0.043 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 c 0.150 0.200 0.250 0.006 0.008 0.010 D 3.200 3.300 3.400 0.126 0.130 0.134 D1 – – – – – – D2 1.650 1.750 1.800 0.065 0.069 0.071 E 3.200 3.300 3.400 0.126 0.130 0.134 E1 – – – – – – E2 2.350 2.450 2.550 0.093 0.096 0.100 e 6 INCHES 0.650 TYP 0.026 H 0.35 0.450 0.550 0.014 0.018 0.022 L 0.35 0.450 0.550 0.014 0.018 0.022 L1 – – – – – – q – – – – – – Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 CSD25401Q3 www.ti.com SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 2.31 1 8 8 1 0.65 Typ. 2.45 5 4 5 3.50 0.56 0.41 4 0.50 Typ. Recommended PCB Pattern 0.63 M0143-01 1.75 ±0.10 Tape and Reel Information 4.00 ±0.10 (See Note 1) Ø 1.50 +0.10 –0.00 3.60 1.30 3.60 5.50 ±0.05 12.00 +0.30 –0.10 8.00 ±0.10 2.00 ±0.05 M0144-01 Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm 3. Material:black static dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and Conection) PbF Reflow Compatible Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 7 CSD25401Q3 SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A Page • Changed 300s to 300µs in Note 2 of the Abs Max Ratings table ........................................................................................ 1 • Changed Qg Gate Charge Total (4.5V) - max value From: 2.3 To: 12.3 .............................................................................. 2 Changes from Revision A (October 2009) to Revision B • 8 Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD25401Q3 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD25401Q3 Package Package Pins Type Drawing SON DQG 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 3.6 B0 (mm) K0 (mm) P1 (mm) 3.6 1.2 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD25401Q3 SON DQG 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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