TI CSD25401Q3

CSD25401Q3
www.ti.com
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFETs
Check for Samples: CSD25401Q3
FEATURES
1
•
•
•
•
•
•
•
2
Table 1. PRODUCT SUMMARY
Ultra Low Qg and Qgd
Low Thermal Resistance
Low RDS(on)
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3mm x 3.3mm Plastic Package
VDS
Drain to Source Voltage
–20
V
Qg
Gate Charge Total (4.5V)
8.8
nC
Qgd
Gate Charge Gate to Drain
2.1
RDS(on)
Drain to Source On Resistance
Vth
Threshold Voltage
nC
VGS = –2.5V
13.5
mΩ
VGS = –4.5V
8.8
mΩ
–0.85
V
ORDERING INFORMATION
APPLICATIONS
•
•
•
•
DC-DC Converters
Battery Management
Load Switch
Battery Protection
Device
Package
Media
Qty
Ship
CSD25401Q3
SON 3 × 3 Plastic
Package
13-inch
reel
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion load
management applications. The SON 3×3 package
offers excellent thermal performance for the size of
the package.
Top View
D
1
8
S
D
2
7
S
D
3
6
S
S
4
VALUE
UNIT
VDS
Drain to Source Voltage
–20
V
VGS
Gate to Source Voltage
+12 / -12
V
Continuous Drain Current, TC = 25°C
–60
A
Continuous Drain Current(1)
–14
A
IDM
Pulsed Drain Current, TA = 25°C(2)
–82
A
PD
Power Dissipation(1)
2.8
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
ID
(1) RqJA = 45°C/W on 1inch2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300µs , duty cycle ≤2%
5
G
S
RDS(ON) vs VGS
Gate Charge
10
ID = −10A
20
TC = 125°C
15
10
TC = 25°C
5
ID = −10A
VDS = −10V
9
25
−VG − Gate Voltage − V
RDS(on) − On-State Resistance − mW
30
8
7
6
5
4
3
2
1
0
0
0
1
2
3
4
5
6
7
8
−VGS − Gate to Source Voltage − V
9
10
G006
0
2
4
6
8
10
Qg − Gate Charge − nC
12
14
16
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
CSD25401Q3
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = –250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = –20V to –16V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = ±12V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = –250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
–20
V
–1
mA
–100
nA
–0.85
–1.2
V
VGS = –2.5V, ID = –10A
13.5
18.2
mΩ
VGS = –4.5V, ID = –10A
8.8
11.7
mΩ
VDS = –15V, ID = –10A
43
–0.6
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
180
230
pF
Qg
Gate Charge Total (4.5V)
8.8
12.3
nC
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = –10V,
f = 1MHz
VDS = –10V, ID = –10A
VDS = –10V, VGS = 0V
VDS = –10V, VGS = –4.5V,
ID = –10A , RG = 5.1Ω
1070
1400
pF
560
730
pF
2.1
nC
2.1
nC
0.9
nC
8.2
nC
8.1
ns
3.9
ns
13.5
ns
12.6
ns
Diode Characteristics
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
IS = –10A, VGS = 0V
–0.7
VDD = –12.5V, IF = –10A,
di/dt = 300A/ms
17.4
–1
nC
V
21
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJC
Thermal Resistance Junction to Case (1)
R qJA
Thermal Resistance Junction to Ambient (1)
(1)
(2)
2
(2)
(2)
MIN
TYP
MAX
UNIT
2.8
°C/W
57
°C/W
R qJC is determined with the device mounted on a 1 inch2 Cu (2 oz.) pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R qJC is specified
by design while R qJA is determined by the user’s board design.
Device mounted on FR4 Material with 1 inch2 of Cu (2 oz.).
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
CSD25401Q3
www.ti.com
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
GATE
GATE
DRAIN
DRAIN
Max RqJA = 158°C/W
when mounted on
minimum pad area of 2
oz. Cu.
Max RqJA = 57°C/W
when mounted on
1inch2 of 2 oz. Cu.
SOURCE
SOURCE
M0137-02
M0137-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – NormalizedThermal Impedance
10
1
0.5
0.3
0.1
Duty Cycle = t1/t2
0.1
0.05
0.01
P
0.02
0.01
t1
t2
o
R qJA = 126 C/W (min Cu)
TJ = P x ZqJA x R qJA
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
tP – Pulse Duration–s
1k
G012
Figure 1. Transient Thermal Impedance
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
3
CSD25401Q3
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
50
50
45
VGS = −4.5V
40
35
VGS = −2V
VGS = −3V
30
-ID − Drain Current − A
−ID − Drain Current − A
45
25
20
VGS = −2.5V
15
10
VDS = -5V
40
35
30
25
TC = 125°C
20
15
TC = 25°C
10
VGS = −1.5V
5
5
0
0
0.5
0
0.5
1
1.5
2
2.5
3
−VDS − Drain to Source Voltage − V
TC = −55°C
1.75
2
2.25
2.5
G002
1400
ID = −10A
VDS = −10V
9
f = 1MHz
VGS = 0V
1200
C − Capacitance − pF
8
7
6
5
4
3
2
1000
COSS = CDS + CGD
CISS = CGD + CGS
800
600
CRSS = CGD
400
200
1
0
0
0
2
4
6
8
10
12
14
16
Qg − Gate Charge − nC
0
2
4
G003
8
10
12
14
16
18
20
G004
Figure 5. Capacitance
30
RDS(on) − On-State Resistance − mW
1.4
ID = −250mA
1.2
1
0.8
0.6
0.4
0.2
0
−75
6
−VDS − Drain to Source Voltage − V
Figure 4. Gate Charge
−VGS(th) − Threshold Voltage − V
1.5
Figure 3. Transfer Characteristics
10
ID = −10A
25
20
TC = 125°C
15
10
TC = 25°C
5
0
−25
25
75
125
175
TC − Case Temperature − °C
0
1
2
3
4
5
6
7
8
9
−VGS − Gate to Source Voltage − V
G005
Figure 6. Threshold Voltage vs. Temperature
4
1.25
-VGS − Gate to Source Voltage − V
G001
Figure 2. Saturation Characteristics
−VG − Gate Voltage − V
1
0.75
10
G006
Figure 7. On Resistance vs. Gate Voltage
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
CSD25401Q3
www.ti.com
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
1.4
100
ID = −10A
VGS = −4.5V
−ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1
0.8
0.6
0.4
0.2
0
−75
10
1
TC = 125°C
0.1
TC = 25°C
0.01
0.001
−25
25
75
125
175
TC − Case Temperature − °C
0
0.2
0.4
0.6
0.8
1
1.2
−VSD − Source to Drain Voltage − V
G007
Figure 8. On Resistance vs. Temperature
G008
Figure 9. Typical Diode Forward Voltage
70
1k
−ID − Drain Current − A
-ID − Drain Current − A
60
100
100ms
10
1ms
10ms
1
0.1
0.01
0.01
Area Limited
by RDS(on)
100ms
Single Pulse
RθJA = 126°C/W (min Cu)
0.1
1
100
-VDS − Drain To Source Voltage − V
Figure 10. Maximum Safe Operating Area
40
30
20
10
DC
10
50
0
−50
−25
0
25
50
75
100
125
150
175
TC − Case Temperature − °C
G009
G011
Figure 11. Maximum Drain Current vs. Temperature
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
5
CSD25401Q3
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
MECHANICAL DATA
CSD25401Q3 Package Dimensions
D2
D
H
L
1
2
7
3
6
L1
Top View
4
5
5
4
3
b
E2
E
6
e
E
7
2
8
8
1
q
A1
Bottom View
Side View
Pinout
1,2,3
Gate
4
Source
5,6,7,8
A
Drain
c
D
Front View
M0142-01
DIM
MILLIMETERS
MIN
NOM
MAX
MIN
NOM
MAX
A
0.950
1.000
1.100
0.037
0.039
0.043
A1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.280
0.340
0.400
0.011
0.013
0.016
c
0.150
0.200
0.250
0.006
0.008
0.010
D
3.200
3.300
3.400
0.126
0.130
0.134
D1
–
–
–
–
–
–
D2
1.650
1.750
1.800
0.065
0.069
0.071
E
3.200
3.300
3.400
0.126
0.130
0.134
E1
–
–
–
–
–
–
E2
2.350
2.450
2.550
0.093
0.096
0.100
e
6
INCHES
0.650 TYP
0.026
H
0.35
0.450
0.550
0.014
0.018
0.022
L
0.35
0.450
0.550
0.014
0.018
0.022
L1
–
–
–
–
–
–
q
–
–
–
–
–
–
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
CSD25401Q3
www.ti.com
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
2.31
1
8
8
1
0.65 Typ.
2.45
5
4
5
3.50
0.56
0.41
4
0.50 Typ.
Recommended PCB Pattern
0.63
M0143-01
1.75 ±0.10
Tape and Reel Information
4.00 ±0.10 (See Note 1)
Ø 1.50
+0.10
–0.00
3.60
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
2.00 ±0.05
M0144-01
Notes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm
3. Material:black static dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and Conection) PbF Reflow Compatible
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
7
CSD25401Q3
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
www.ti.com
REVISION HISTORY
Changes from Original (August 2009) to Revision A
Page
•
Changed 300s to 300µs in Note 2 of the Abs Max Ratings table ........................................................................................ 1
•
Changed Qg Gate Charge Total (4.5V) - max value From: 2.3 To: 12.3 .............................................................................. 2
Changes from Revision A (October 2009) to Revision B
•
8
Page
Deleted the Package Marking Information section ............................................................................................................... 7
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD25401Q3
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
CSD25401Q3
Package Package Pins
Type Drawing
SON
DQG
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.8
Pack Materials-Page 1
3.6
B0
(mm)
K0
(mm)
P1
(mm)
3.6
1.2
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD25401Q3
SON
DQG
8
2500
335.0
335.0
32.0
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,
and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are
sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard
warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using TI components. To minimize the risks associated with customer products and applications, customers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,
or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a
warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual
property of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive
business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all
express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not
responsible or liable for any such statements.
TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably
be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing
such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products
and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be
provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in
such safety-critical applications.
TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are
specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, TI will not be responsible for any failure to meet such requirements.
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Applications
Audio
www.ti.com/audio
Communications and Telecom www.ti.com/communications
Amplifiers
amplifier.ti.com
Computers and Peripherals
www.ti.com/computers
Data Converters
dataconverter.ti.com
Consumer Electronics
www.ti.com/consumer-apps
DLP® Products
www.dlp.com
Energy and Lighting
www.ti.com/energy
DSP
dsp.ti.com
Industrial
www.ti.com/industrial
Clocks and Timers
www.ti.com/clocks
Medical
www.ti.com/medical
Interface
interface.ti.com
Security
www.ti.com/security
Logic
logic.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Power Mgmt
power.ti.com
Transportation and
Automotive
www.ti.com/automotive
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
Wireless
www.ti.com/wireless-apps
RF/IF and ZigBee® Solutions
www.ti.com/lprf
TI E2E Community Home Page
e2e.ti.com
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2011, Texas Instruments Incorporated