TYSEMI 2SJ557

SMD Type
Product specification
2SJ557
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
FEATURES
0.16+0.1
–0.06
+0.1
0.65–0.15
0.4 +0.1
–0.05
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
3
1.5
2.8 ±0.2
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
0 to 0.1
1
2
0.95
0.95
0.65
1.9
0.9 to 1.1
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ557
3-pin Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
–20 / +5
V
Drain Current (DC)
ID(DC)
±2.5
A
ID(pulse)
±10
A
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Body
Diode
Gate
Gate
Protection
Diode
Source
Marking: XB
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t ≤ 5 sec.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
SMD Type
Product specification
2SJ557
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I DSS
VDS = –30 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.7
–2.5
V
| yfs |
VDS = –10 V, ID = –1.5 A
1
2.5
RDS(on)1
VGS = –10 V, ID = –1.0 A
114
155
mΩ
RDS(on)2
VGS = –4.5 V, ID = –1.0 A
178
255
mΩ
RDS(on)3
VGS = –4.0 V, ID = –1.0 A
212
290
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = –10 V
312
pF
Output Capacitance
Coss
VGS = 0 V
117
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
56
pF
Turn-on Delay Time
td(on)
VDD = –10 V
12
ns
tr
ID = –1.0 A
7
ns
VGS(on) = –10 V
133
ns
tf
RG = 10 Ω
85
ns
Total Gate Charge
QG
VDD= –10 V
2.8
nC
Gate to Source Charge
QGS
ID = –2.5 A
1.0
nC
Gate to Drain Charge
QGD
VGS = –4.0 V
1.2
nC
Rise Time
Turn-off Delay Time
td(off)
Fall Time
Diode Forward Voltage
VF(S-D)
IF = 2.5 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 2.5 A, VGS = 0 V
28
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A / µs
7.8
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
VGS(on)
10 %
IG = 2 mA
RL
50 Ω
VDD
90 %
PG.
VDD
90 %
ID
90 %
ID
VGS
0
10 %
0 10 %
ID
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
http://www.twtysemi.com
tr
td(on)
ton
td(off)
tf
toff
[email protected]
4008-318-123
2 of 2