SMD Type Product specification 2SJ557 PACKAGE DRAWING (Unit : mm) DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A) 3 1.5 2.8 ±0.2 The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 1 2 0.95 0.95 0.65 1.9 0.9 to 1.1 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER PACKAGE 2SJ557 3-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS –20 / +5 V Drain Current (DC) ID(DC) ±2.5 A ID(pulse) ±10 A PT1 0.2 W PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Body Diode Gate Gate Protection Diode Source Marking: XB Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board, t ≤ 5 sec. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification 2SJ557 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = –30 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.7 –2.5 V | yfs | VDS = –10 V, ID = –1.5 A 1 2.5 RDS(on)1 VGS = –10 V, ID = –1.0 A 114 155 mΩ RDS(on)2 VGS = –4.5 V, ID = –1.0 A 178 255 mΩ RDS(on)3 VGS = –4.0 V, ID = –1.0 A 212 290 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 312 pF Output Capacitance Coss VGS = 0 V 117 pF Reverse Transfer Capacitance Crss f = 1 MHz 56 pF Turn-on Delay Time td(on) VDD = –10 V 12 ns tr ID = –1.0 A 7 ns VGS(on) = –10 V 133 ns tf RG = 10 Ω 85 ns Total Gate Charge QG VDD= –10 V 2.8 nC Gate to Source Charge QGS ID = –2.5 A 1.0 nC Gate to Drain Charge QGD VGS = –4.0 V 1.2 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 2.5 A, VGS = 0 V 0.84 V Reverse Recovery Time trr IF = 2.5 A, VGS = 0 V 28 ns Reverse Recovery Charge Qrr di/dt = 50 A / µs 7.8 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 VGS(on) 10 % IG = 2 mA RL 50 Ω VDD 90 % PG. VDD 90 % ID 90 % ID VGS 0 10 % 0 10 % ID Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % http://www.twtysemi.com tr td(on) ton td(off) tf toff [email protected] 4008-318-123 2 of 2