IC SMD Type Product specification 2SK3918 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Low Ciss: Ciss = 1300 pF TYP. +0.15 0.50-0.15 MAX. (VGS = 10 V, ID = 24 A) +0.2 9.70-0.2 RDS(on)1 = 7.5 m 3.80 Low on-state resistance 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 25 V Gate to source voltage VGSS 20 V ID 48 A Idp * 192 A Drain current Power dissipation TA=25 1.0 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 29 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 6 Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ VDS=25V,VGS=0 Max 10 100 2.5 Unit A nA 3.0 V Yfs VDS=10V,ID=12A RDS(on)1 VGS=10V,ID=24A 5.9 7.5 mÙ RDS(on)2 VGS=5.0V,ID=12A 11 22.2 mÙ Ciss VDS=10V,VGS=0,f=1MHZ 12 S 1300 pF Output capacitance Coss 310 pF Reverse transfer capacitance Crss 220 pF Turn-on delay time ton 13 ns 14 ns 38 ns Rise time tr Turn-off delay time toff Fall time ID=24A,VGS(on)=10V,RG=10 ,VDD=12.5V tf 14 ns Total Gate Charge QG 28 nC Gate to Source Charge QGS 5 nC 10 nC Gate to Drain Charge Body Diode Forward Voltage QGD VDD = 20V VGS = 10 V ID =48A VF(S-D) IF = 48A, VGS = 0 V 0.98 V Reverse Recovery Time trr IF = 48 A, VGS = 0 V 27 ns Reverse Recovery Charge Qrr di/dt = 100 A/ ìs 15 nC http://www.twtysemi.com [email protected] 4008-318-123 1 of 1