DMN3015LSD - Diodes Incorporated

DMN3015LSD
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
NEW PRODUCT
Product Summary
Features and Benefits
V(BR)DSS
RDS(on) max
30V
15mΩ @ VGS = 10V
18mΩ @ VGS = 4.5V
ID
TA = +25°C
8.4A
7.7A
•
Low Input Capacitance
•
Low On-Resistance
•
Fast Switching Speed
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
Description
•
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management
•
applications.
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
DC-DC Converters
•
Power Management Functions
•
Backlighting
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.074 grams (approximate)
S1
D1
G1
D1
S2
D2
G2
D2
D1
D2
Pin1
S2
S1
Top View
Pin Configuration
Top View
G2
G1
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3015LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
N3015LD
C6040SD
N3015LD
C6040SD
YY WW
1
5
YY WW
4
Chengdu A/T Site
DMN3015LSD
Document number: DS36300 Rev. 2 - 2
1
4
= Manufacturer’s Marking
N3015LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Shanghai A/T Site
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DMN3015LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
NEW PRODUCT
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<10s
Value
30
±20
8.4
6.8
ID
A
11.0
9.0
2.5
80
22
25
ID
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy (Notes 7) L = 0.1mH
Units
V
V
IS
IDM
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
PD
RθJA
PD
RθJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
TJ, TSTG
Value
1.2
0.8
102
62
1.6
1.0
78
47
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
⎯
⎯
⎯
⎯
⎯
⎯
1
±100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
⎯
8
12
0.7
2.5
15
18
1.0
V
Static Drain-Source On-Resistance
1.3
⎯
⎯
⎯
VDS = VGS, ID = 250µA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1415
119
82
2.6
11.3
25.1
3.5
3.6
4.8
16.5
26.1
5.6
8.5
7.0
⎯
⎯
⎯
3.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 15V, ID = 12A
nS
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω,
nS
nC
IS = 12A, dI/dt = 500A/μs
IS = 12A, dI/dt = 500A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3015LSD
Document number: DS36300 Rev. 2 - 2
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© Diodes Incorporated
DMN3015LSD
30
30
VGS = 10V
VDS = 5.0V
VGS = 4.5V
25
VGS = 4.0V
25
VGS = 3.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
20
15
10
VGS = 2.5V
5
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
0.01
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN3015LSD
Document number: DS36300 Rev. 2 - 2
TA = 150°C
10
TA = 85°C
TA = 125°C
0
2
0.02
0
15
T A = 25°C
TA = -55°C
VGS = 2.2V
0.5
1
1.5
VDS, DRAIN -SOURCE VOLTAGE(V)
Figure 1 Typical Output Characteristics
20
5
0.03
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCE INFORMATION
NEW PRODUCT
VGS = 3.5V
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0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
0.03
VGS = 4.5V
0.025
T A = 150 °C
0.02
TA = 125 °C
0.015
TA = 85°C
T A = 25°C
0.01
TA = -55°C
0.005
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.024
0.020
VGS = 4.5V
ID = 5A
0.016
VGS = 10V
ID = 10A
0.012
0.008
0.004
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
July 2014
© Diodes Incorporated
30
2.5
25
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
3.0
2.0
1.5
1.0
20
15
10
5
0.5
0
0
-50
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-25
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
Ciss
1000
Coss
100
Crss
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
10000
0
100
ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
NEW PRODUCT
DMN3015LSD
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
20
9
8
7
6
VDS = 15V
ID = 12A
5
4
3
2
1
0
0
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
25
RDS(on)
Limited
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
0.1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
PW = 1ms
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN3015LSD
Document number: DS36300 Rev. 2 - 2
100
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DMN3015LSD
1
D = 0.9
D = 0.7
ADVANCE INFORMATION
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 102°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
7°~9°
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN3015LSD
Document number: DS36300 Rev. 2 - 2
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DMN3015LSD
ADVANCE INFORMATION
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMN3015LSD
Document number: DS36300 Rev. 2 - 2
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© Diodes Incorporated