DMP6185SE 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) ID TA = +25°C • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance 150mΩ @ VGS= -10V -3A • Fast switching speed 185mΩ @ VGS= -4.5V -2.7A • Lead-Free Finish; RoHS compliant (Notes 1 & 2) ADVANCE INFORMATION NEW PRODUCT V(BR)DSS -60V Features and Benefits • Halogen and Antimony Free. “Green” Device (Note 3) Description • Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance Mechanical Data and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications • Moisture Sensitivity: Level 1 per J-STD-020 • Motor Control • Terminals Connections: See diagram below • Transformer Driving Switch • • DC-DC Converters Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 • Power Management Functions • Weight: 0.112 grams (approximate) • Uninterrupted Power Supply D SOT223 G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number DMP6185SE-13 Notes: Qualification Standard Case SOT223 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW P6185 DMP6185SE Document Number DS36465 Rev. 4 - 2 YWW P6185 = Manufacturer’s Marking P6185 = Marking Code YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site) YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y= Year (ex: 3 = 2013) WW = Week (01 - 53) 1 of 6 www.diodes.com January 2014 © Diodes Incorporated DMP6185SE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol Value Unit Drain-Source voltage VDSS -60 V Gate-Source voltage VGS ±20 V Continuous Drain current (Note 6) VGS = -10V TA = +25°C -3 ID TA = +70°C Maximum Body Diode Continuous Current A -2.4 A IS -2 Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -15 A Single Pulsed Avalanche Current (Note 7) IAS -16 A Single Pulsed Avalanche Energy (Note 7) EAS 13 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 1.2 0.8 104 51 2.2 1.4 60 30 7.6 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 − − − − − − -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1 RDS (ON) − mΩ VSD − -3 150 185 -0.95 V Static Drain-Source On-Resistance − 110 130 -0.75 VDS = VGS, ID = -250μA VGS = -10V, ID = -2.2A VGS = -4.5V, ID = -1.8A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr − − − − − − − − − − − − − − 708 39 32 17 6.2 14 2.8 3.1 5.2 23 33 39 22 17 − − − 28 − − − − − − − − − − pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -12A VDS = -30V, RL = 2.5Ω VGS = -10V, RG = 3Ω IF = -12A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting TA = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP6185SE Document Number DS36465 Rev. 4 - 2 2 of 6 www.diodes.com January 2014 © Diodes Incorporated DMP6185SE 20 20.0 VGS = -8V 18.0 16 12.0 10.0 VGS = -1.8V 8.0 6.0 VGS = -1.5V 2.0 14 12 10 8 6 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.12 0.11 0.1 0.09 0.08 0.07 VGS = -2.5V 0.06 0.05 VGS = -4.5V 0.04 0.03 0.02 0.01 0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 TA = 85° C T A = 25°C 2 VGS = -1.2V 0 TA = 150°C 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) -ID, DRAIN CURRENT (A) VGS = -2.0V TA = 125°C 0 TA = -55°C 0.5 1 1.5 2 2.5 -VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.5 ID = 3.4A ID = 4.2A 0.4 0.3 0.2 ID = 2.0A 0.1 20 0 0 1 2 3 4 5 6 7 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 8 1.8 0.1 VGS = -4.5V 0.09 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) -ID, DRAIN CURRENT (A) VGS = -2.5V 14.0 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION NEW PRODUCT 16.0 0.0 VDS = -5.0V 18 0.08 TA = 125°C 0.07 0.06 TA = 150°C T A = 85°C 0.05 TA = 25°C 0.04 TA = -55°C 0.03 0.02 1.6 VGS = -4.5V ID = -10A 1.4 VGS = -2.5V ID = -5A 1.2 1 0.8 0.01 0 0 1 2 3 4 5 6 7 8 9 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP6185SE Document Number DS36465 Rev. 4 - 2 10 3 of 6 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature January 2014 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.2 0.1 0.09 0.08 0.07 0.06 0.05 VGS = -4.5V ID = -10A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 1 -ID = 1mA 0.8 -ID = 250µA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 20 CT, JUNCTION CAPACITANCE (pF) 18 -IS, SOURCE CURRENT (A) 16 14 12 TA= 150°C 10 TA= 85°C 8 6 TA= 125°C 4 2 0 TA= 25°C f = 1MHz 1000 Ciss 100 Coss Crss TA= -55°C 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 10 9 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMP6185SE 8 7 VDS = -30V ID = -12A 6 5 4 3 2 1 0 0 3 6 9 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP6185SE Document Number DS36465 Rev. 4 - 2 15 4 of 6 www.diodes.com January 2014 © Diodes Incorporated DMP6185SE 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 102°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions X1 X2 Y1 Y2 C1 C2 Y1 C1 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 Y2 X2 DMP6185SE Document Number DS36465 Rev. 4 - 2 C2 5 of 6 www.diodes.com January 2014 © Diodes Incorporated DMP6185SE ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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