DMP6185SE ADVAN CE IN F O RM ATIO N NEW PROD UC T

DMP6185SE
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(on)
ID
TA = +25°C
•
100% Unclamped Inductive Switch (UIS) test in production
•
Low on-resistance
150mΩ @ VGS= -10V
-3A
•
Fast switching speed
185mΩ @ VGS= -4.5V
-2.7A
•
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
ADVANCE
INFORMATION
NEW
PRODUCT
V(BR)DSS
-60V
Features and Benefits
•
Halogen and Antimony Free. “Green” Device (Note 3)
Description
•
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
Mechanical Data
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
•
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Motor Control
•
Terminals Connections: See diagram below
•
Transformer Driving Switch
•
•
DC-DC Converters
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208 e3
•
Power Management Functions
•
Weight: 0.112 grams (approximate)
•
Uninterrupted Power Supply
D
SOT223
G
S
Top View
Equivalent Circuit
Pin Out - Top View
Ordering Information (Note 4)
Part Number
DMP6185SE-13
Notes:
Qualification
Standard
Case
SOT223
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YWW
P6185
DMP6185SE
Document Number DS36465 Rev. 4 - 2
YWW
P6185
= Manufacturer’s Marking
P6185 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
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DMP6185SE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE
INFORMATION
NEW
PRODUCT
Characteristic
Symbol
Value
Unit
Drain-Source voltage
VDSS
-60
V
Gate-Source voltage
VGS
±20
V
Continuous Drain current (Note 6) VGS = -10V
TA = +25°C
-3
ID
TA = +70°C
Maximum Body Diode Continuous Current
A
-2.4
A
IS
-2
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-15
A
Single Pulsed Avalanche Current (Note 7)
IAS
-16
A
Single Pulsed Avalanche Energy (Note 7)
EAS
13
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Value
1.2
0.8
104
51
2.2
1.4
60
30
7.6
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-60
−
−
−
−
−
−
-1
±100
V
µA
nA
VGS = 0V, ID = -250μA
VDS = -48V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
-1
RDS (ON)
−
mΩ
VSD
−
-3
150
185
-0.95
V
Static Drain-Source On-Resistance
−
110
130
-0.75
VDS = VGS, ID = -250μA
VGS = -10V, ID = -2.2A
VGS = -4.5V, ID = -1.8A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
−
−
−
−
−
−
−
−
−
−
−
−
−
−
708
39
32
17
6.2
14
2.8
3.1
5.2
23
33
39
22
17
−
−
−
28
−
−
−
−
−
−
−
−
−
−
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
Test Condition
VDS = -30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -30V, ID = -12A
VDS = -30V, RL = 2.5Ω
VGS = -10V, RG = 3Ω
IF = -12A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP6185SE
Document Number DS36465 Rev. 4 - 2
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© Diodes Incorporated
DMP6185SE
20
20.0
VGS = -8V
18.0
16
12.0
10.0
VGS = -1.8V
8.0
6.0
VGS = -1.5V
2.0
14
12
10
8
6
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.12
0.11
0.1
0.09
0.08
0.07
VGS = -2.5V
0.06
0.05
VGS = -4.5V
0.04
0.03
0.02
0.01
0
0
5
10
15
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
5
TA = 85° C
T A = 25°C
2
VGS = -1.2V
0
TA = 150°C
4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
-ID, DRAIN CURRENT (A)
VGS = -2.0V
TA = 125°C
0
TA = -55°C
0.5
1
1.5
2
2.5
-VGS , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
0.5
ID = 3.4A
ID = 4.2A
0.4
0.3
0.2
ID = 2.0A
0.1
20
0
0
1
2
3
4
5
6
7
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
8
1.8
0.1
VGS = -4.5V
0.09
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
-ID, DRAIN CURRENT (A)
VGS = -2.5V
14.0
4.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCE
INFORMATION
NEW
PRODUCT
16.0
0.0
VDS = -5.0V
18
0.08
TA = 125°C
0.07
0.06
TA = 150°C
T A = 85°C
0.05
TA = 25°C
0.04
TA = -55°C
0.03
0.02
1.6
VGS = -4.5V
ID = -10A
1.4
VGS = -2.5V
ID = -5A
1.2
1
0.8
0.01
0
0
1
2
3
4
5
6
7
8
9
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP6185SE
Document Number DS36465 Rev. 4 - 2
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0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
January 2014
© Diodes Incorporated
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
0.1
0.09
0.08
0.07
0.06
0.05
VGS = -4.5V
ID = -10A
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
1
-ID = 1mA
0.8
-ID = 250µA
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
20
CT, JUNCTION CAPACITANCE (pF)
18
-IS, SOURCE CURRENT (A)
16
14
12
TA= 150°C
10
TA= 85°C
8
6
TA= 125°C
4
2
0
TA= 25°C
f = 1MHz
1000
Ciss
100
Coss
Crss
TA= -55°C
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
30
35
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
9
-VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE
INFORMATION
NEW
PRODUCT
DMP6185SE
8
7
VDS = -30V
ID = -12A
6
5
4
3
2
1
0
0
3
6
9
12
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
DMP6185SE
Document Number DS36465 Rev. 4 - 2
15
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DMP6185SE
1
D = 0.9
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE
INFORMATION
NEW
PRODUCT
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 102°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions
X1
X2
Y1
Y2
C1
C2
Y1
C1
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
Y2
X2
DMP6185SE
Document Number DS36465 Rev. 4 - 2
C2
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DMP6185SE
ADVANCE
INFORMATION
NEW
PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMP6185SE
Document Number DS36465 Rev. 4 - 2
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© Diodes Incorporated