DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 0.4Ω @ VGS = 10V 0.65A 0.7Ω @ VGS = 4.5V 0.52A • • • • • • Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • • • • Motor Control Power Management Functions DC-DC Converters Backlighting Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • • • • • • Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Alloy42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) D1 SOT363 Gate Protection Diode ESD PROTECTED Top View D2 D2 G1 S1 S2 S2 G2 D1 G2 G1 Gate Protection Diode S1 Q2 N-CHANNEAL Q1 N-CHANNEAL Top View Pin out Ordering Information (Note 4) Part Number DMN32D4SDW-7 DMN32D4SDW-13 Notes: Case SOT363 SOT363 Packaging 3,000K/Tape & Reel 10,000K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html Marking Information SOT363 D2 G1 S1 N34 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) N34 YM N34 YM NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION V(BR)DSS 30V Features and Benefits S2 Date Code Key Year Code Month Code 2014 B Jan 1 G2 D1 2015 C Feb 2 DMN32D4SDW Document number: DS36023 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D February 2015 © Diodes Incorporated DMN32D4SDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State TA = 25°C TA = 70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Symbol VDSS VGSS Value 30 ±20 Units V V ID 0.65 0.50 A IS 0.4 A IDM 4 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Steady State Steady State Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.29 420 0.35 360 128 -55 to 150 Units W °C/W W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±10 V µA µA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) 1.6 0.4 0.7 1.0 1.2 Ω VSD 0.2 0.3 0.4 0.9 0.8 V Static Drain-Source On-Resistance 0.8 - VDS = VGS, ID = 250µA VGS = 10V, ID = 0.25A VGS = 4.5V, ID = 0.25A VGS = 4.0V, ID = 0.25A VGS = 2.5V, ID = 0.01A VGS = 0V, IS = 0.23A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 50 10 6.8 114 0.6 1.3 0.2 0.1 2.8 3.2 26.3 22.8 - pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = VGS = 0V,f = 1.0MHz VDS = 10V, ID = 250mA VGS = 10V, VDS = 30V, ID = 100mA, RG = 10Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN32D4SDW Document number: DS36023 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN32D4SDW 1.0 1 VGS = 10V Vds = 5.0V VGS = 5V ID, DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 0.8 VGS = 4.5V VGS = 4.0V VGS = 3.5V 0.6 VGS = 3.0V VGS = 2.5V 0.4 0.2 0.6 T A = 85°C 0.4 TA = 125°C 0.0 T A = 150°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.9 VGS = 2.5V 0.8 0.7 0.6 0.5 0.4 VGS = 4.5V 0.3 0.2 VGS = 10.0V 0.1 0 0 0.2 0.4 0.6 0.8 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 1 T A = -55°C 0 1 2 3 4 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 25°C 0.2 VGS = 2.0V 5 2 1.8 I D = 250mA 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage I D = 10mA 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 TypicalTransfer Characteristic 20 1.6 0.7 RD S(ON ), DRAIN-SOURCE ON-RESIS TANCE (Normalized) 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION 0.8 Vgs = 4.5V 0.6 T A = 150°C 0.5 T A = 125°C 0.4 T A = 85°C 0.3 T A = 25°C 0.2 T A = -55°C 0.1 0 0 0.2 0.4 0.6 0.8 I D, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN32D4SDW Document number: DS36023 Rev. 2 - 2 1 VGS = 10.0V 1.4 I D = 500mA VGS = 5.0V 1.2 I D = -300mA 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com February 2015 © Diodes Incorporated 2 VG S(th ), GATE THRES HO LD VO LTAGE (V ) R DS(ON), DRAI N-SO URCE ON-RESISTANCE ( Ω) 0.5 VGS = 5V 0.4 I D = 300mA 0.3 VGS = 10V I D = 500mA 0.2 0.1 0 -50 1.8 1.6 1.4 ID = 1mA 1.2 1 ID = 250µA 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 100 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 7 On-Resistance Variation with Temperature 1 CT , JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0.9 0.8 0.7 TA = 85°C 0.6 0.5 T A = 125°C T A = 25°C 0.4 0.3 TA = 150°C 0.2 TA = 55°C C iss C oss 10 Crss 0.1 f = 1MHz 0 0 0.2 0.4 0.6 0.8 1 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1 1.2 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 10 10 RDS(on) Limited PW = 100µs 8 6 4 VDS = 10V I D = 250mA -I D, DRAI N CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION DMN32D4SDW 1 DC 0.1 PW = 1ms 0.01 2 0 PW = 10s PW = 1s PW = 100ms PW = 10ms TJ (m ax ) = 150°C TA = 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.001 0.1 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN32D4SDW Document number: DS36023 Rev. 2 - 2 4 of 6 www.diodes.com V GS = 10V Single Pulse DUT on 1 * MRP Board 1 10 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMN32D4SDW r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA D = Single Pulse RθJA = 415°C/W Duty Cycle, D = t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X DMN32D4SDW Document number: DS36023 Rev. 2 - 2 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN32D4SDW IMPORTANT NOTICE NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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