DMP2100UCB9 NEW PROD UC T Product Summary Description

DMP2100UCB9
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA
Features and Benefits
= +25°C)
NEW PRODUCT


LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 80mΩ to Minimize On-State Losses
Qg = 3.3nC for Ultra-Fast Switching
Vgs(th) = -0.7V typ. for a Low Turn-On Potential
performance, making it ideal for high-efficiency power management
applications.






CSP with Footprint 1.5mm × 1.5mm
Height = 0.62mm for Low Profile
ESD = 3kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data






VDSS
RDS(on)
Qg
Qgd
ID
-20V
80mΩ
3.3nC
0.6nC
-4A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RD1D2(ON)) and yet maintain superior switching
Battery Management
Load Switch
Battery Protection
ESD PROTECTED TO 3kV
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (Approximate)
G1
D1
D1
SS
D2
D1
G2
D2
D2
Top View
Ordering Information (Note 4)
Part Number
DMP2100UCB9-7
Notes:
Case
U-WLB1515-9
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1515-9
6W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
6W
YM
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
2013
A
Feb
2
DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
Mar
3
2014
B
Apr
4
May
5
2015
C
Jun
6
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2016
D
Jul
7
Aug
8
2017
E
Sep
9
Oct
O
2018
F
Nov
N
Dec
D
May 2015
© Diodes Incorporated
DMP2100UCB9
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VD1D2
VGS
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TC = +25°C
TC = +70°C
TC = +25°C
TC = +70°C
Value
-20
-6
-3.0
-2.1
ID1D2
A
-4.0
-3.0
-2.0
-0.4
-15
-28
-6
ID1D2
Continuous Source Pin Current (Note 6)
Continuous Gate Clamp Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤ 1%)
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤ 1%)
Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤ 1%)
Units
V
V
IS
IG
ISM
IDM
IGM
A
A
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Symbol
PD
Value
0.8
1.6
Units
W
W
Thermal Resistance, Junction to Ambient (Note 5)
PD
RθJA
152
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
65
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVD1D2
-20
VGS = 0V, ID1D2 = -250μA
V
IGS = -250μA, VD1D2 = 0V
IDDS
-6.1
—
—
—
V
BVGSS
—
—
—
—
—
μA
nA
VD1D2 = -16V, VGS = 0V
IGSS
-1
-100
VGS(th)
-0.4
-0.7
-0.9
V
—
—
—
80
100
VD1D2 = VGS, IDS = -250μA
VGS = -4.5V, ID1D2 =- 1A
105
130
140
175
RD1D2(ON)
Forward Transfer Admittance
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6)
|Yfs|
—
5.3
—
VSD
—
-0.7
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Qrr
—
-1
—
trr
—
18
34
mΩ
VD1D2 = -10V, ID1D2 = -1A
V
VGS = 0V, ID1D2 = -1A
—
nC
ns
Vdd = -9.5V, IF = -1A,
di/dt = 200A/μs
pF
pF
—
—
—
232
107
43.5
310
150
55
pF
Qg
—
3.3
nC
Gate-Source Charge
Qgs
—
0.3
4.2
—
Gate-Drain Charge
Qgd
—
0.6
—
nC
Qg(th)
—
0.2
—
—
—
8.5
7.0
—
—
nC
ns
Turn-On Rise Time
tD(on)
tr
Turn-Off Delay Time
tD(off)
—
47
—
ns
tf
—
28
—
ns
Gate Charge at Vth
Turn-On Delay Time
Turn-Off Fall Time
Notes:
VGS = -2.5V, ID1D2 = -1A
VGS = -1.8V, ID1D2 = -1A
Ciss
Total Gate Charge (4.5V)
VGS = -6V, VDS = 0V
S
Coss
Crss
Reverse Transfer Capacitance
Test Condition
nC
ns
VD1D2 = -10V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V, VD1D2 = -10V,
ID1D2 = -1A
VD1D2 = -10V, VGS = -4.5V,
ID1D2 = -1A, RG = 30Ω,
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
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DMP2100UCB9
5
VGS = -4.5V
VGS = -2.5V
VDS = -5.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -1.8V
VGS = -1.5V
3
2
VGS = -1.2V
TA = 150C
1
0
TA = 125C
0
0.5
1.0
1.5
2.0
2.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
0
3.0
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
TA = 85C
TA = 25 C
TA = -55 C
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
1.2
0.5
1.0
1.5
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance Variation with Temperature
0
1
2
3
4
5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
6
10
9
1.0
8
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE(V)
NEW PRODUCT
4
0.8
0.6
0.4
0.2
7
6
5
4
3
2
1
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
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0
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 6 Diode Forward Voltage vs. Current
1.4
May 2015
© Diodes Incorporated
DMP2100UCB9
6
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
Ciss
Coss
5
4
3
2
1
C rss
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Junction Capacitance
0
20
0
1
2
3
Qg, TOTAL GATE CHARGE (nC)
Fig. 8 Gate-Charge Characteristics
4
100
-ID, DRAIN CURRENT (A)
PW = 10µs
RDS(on)
Limited
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1 TJ(max) = 150°C
TA = 25°C
Single Pulse DUT
on 1 * MRP Board
VGS = -6V
0.01
0.1
PW = 100µs
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
100
1
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * RJA
RJA = 70°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.0001
DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Fig. 10 Transient Thermal Resistance
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100
1,000
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DMP2100UCB9
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
NEW PRODUCT
D
9x-Ø b
Pin #1 ID
U-WLB1515-9
e
E
e
e
e
A3
A2
Dim
Min
Max
Typ
A
-0.62
-A2
-0.36
0.36
A3
0.020 0.030 0.025
b
0.27
0.37
0.32
D
1.47
1.50
1.49
E
1.47
1.50
1.49
e
--0.50
All Dimensions in mm
A
SEATING PLANE
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
D
Dimensions
C1
C
C
C1
C2
D
Value
(in mm)
0.50
1.00
1.00
0.25
C
C2
DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
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DMP2100UCB9
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMP2100UCB9
Document number: DS35725 Rev. 5 - 2
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