DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) -20V 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V Features and Benefits ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data DC-DC Converters Power Management Functions Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) X2-DFN1006-3 D G S D G ESD protected Bottom View Top View Internal Schematic Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMP210DUFB4-7 DMP210DUFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMP210DUFB4 Document number: DS35026 Rev. 11 - 2 1 of 7 www.diodes.com August 2015 © Diodes Incorporated DMP210DUFB4 Marking Information From date code 1527 (YYWW), this changes to: N1 N1 Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side N1 N1 N1 N1 N1 N1 DMP210DUFB4-7 N1 Top View Bar Denotes Gate and Source Side N1 = Part Marking Code DMP210DUFB4 Document number: DS35026 Rev. 11 - 2 N1 N1 N1 DMP210DUFB4-7B 2 of 7 www.diodes.com August 2015 © Diodes Incorporated DMP210DUFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -1.8V Steady State Pulsed Drain Current TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -20 ±10 -200 -160 ID Units V V mA IDM -140 -110 -600 Symbol PD RθJA TJ, TSTG Value 350 357 -55 to +150 ID TP = 10µs mA mA Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics Units mW °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -20 -100 -50 V nA nA 100 nA µA µA VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VDS = -5.0V, VGS = 0V VGS = 5.0V, VDS = 0V VGS = 8.0V, VDS = 0V VGS = 10.0V, VDS = 0V V VDS = VGS, ID = -250µA V VDS = VGS, ID = -250µA Zero Gate Voltage Drain Current IDSS Gate-Source Leakage IGSS VGS(th) |Yfs| VSD -0.5 -0.55 -0.40 -0.35 -0.5 20 200 -1.0 -1.05 -0.90 -0.85 5 7 10 15 -1.2 mS V Ciss Coss Crss 13.72 4.01 2.34 175 30 20 pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf 7.7 19.3 25.9 31.5 nS VGS = -4.5V, VDD = -15V ID = -180mA, RG = 2.0Ω ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Gate Threshold Voltage (Note 7) @TJ = +25°C @TJ = 0°C @TJ = +85°C @TJ = +100°C Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: VGS(th) RDS(ON) 1 10 Ω VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA VDS = -10V, ID = -200mA VGS = 0V, IS = -115mA 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMP210DUFB4 Document number: DS35026 Rev. 11 - 2 3 of 7 www.diodes.com August 2015 © Diodes Incorporated DMP210DUFB4 0.6 0.6 VGS = -4.5V 0.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.5 0.4 0.3 VGS= -2.5V 0.2 0.4 0.3 0.2 VGS = -1.8V 0.1 0.1 VGS = -1.5V VGS= -1.2V 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics VDS=5.0V 4 100 RDS(ON) () Ave @ VGS=1.5V 10 RDS(ON) () Ave @ VGS=1.8V RDS(ON) () Ave @ VGS=2.5V RDS(ON) () Ave @ VGS=4.5V 1 0.001 0.01 0.1 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 1.4 1.2 RDS(ON)( ) @VGS=2.5V, ID=50mA 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resisitance Variation with Temperature Document number: DS35026 Rev. 11 - 2 VGS =4.5V 9 Ave RDS(ON) (R) @ 150C 8 7 Ave RDS(ON) (R) @ 125 C 6 5 4 Ave RDS(ON) (R) @ 85C 3 Ave RDS(ON) (R) @ 25 C 2 Ave RDS(ON) (R) @ -55C 1 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON)( ) @VGS=4.5V, ID=200mA DMP210DUFB4 10 1 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 4 of 7 www.diodes.com 0.1 0.2 0.3 0.4 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.5 12 10 8 RDS(ON)() @VGS=2.5V, ID=50mA 6 4 RDS(ON)() @VGS=4.5V, ID=200mA 2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resisitance vs.Temperature 150 August 2015 © Diodes Incorporated DMP210DUFB4 0.6 1.2 0.5 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 ID= 1mA 0.8 0.6 ID= 250 A 0.4 TA= 25C 0.4 0.3 0.2 0.1 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10,000 100 TA = 150C IDSS, LEAKAGE CURRENT (nA) f = 1MHz CT, JUNCTION CAPACITANCE (pF) 1.2 Ciss 10 Coss 1,000 100 TA = 85 C 10 TA = 25C 1 C rss TA = -55 C 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 0.1 0 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 20 2 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 369°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMP210DUFB4 Document number: DS35026 Rev. 11 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 August 2015 © Diodes Incorporated DMP210DUFB4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. X2-DFN1006-3 A X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm A1 Seating Plane D b Pin #1 ID e E b2 z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2-DFN1006-3 C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 G1 X1 DMP210DUFB4 Document number: DS35026 Rev. 11 - 2 6 of 7 www.diodes.com August 2015 © Diodes Incorporated DMP210DUFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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