DMN3300U N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) Package 30V 0.15Ω @ VGS = 4.5V 0.2Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.8V 0.3Ω @ VGS = 1.5V SOT23 • • • • • • • • ID TA = +25°C 2A 1.6A 1.4A 1.2A Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • Applications • • • • • • • DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 D G Top View S Internal Schematic Ordering Information (Note 4) Part Number DMN3300U-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 33N Date Code Key Year Code 2007 U 2008 V Month Code Jan 1 Feb 2 DMN3300U Document number: DS31181 Rev. 5 - 2 2009 W Mar 3 2010 X Apr 4 YM NEW PRODUCT Product Summary 33N = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2011 Y May 5 2012 Z Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D September 2012 © Diodes Incorporated DMN3300U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 30 ±12 1.5 1.2 ID A 2.0 1.6 8 1.6 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current (Note 6) Units V V IDM IS A A A Thermal Characteristics Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Value 0.7 1.3 176 102 45 -55 to +150 PD RθJA RθJC TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 ⎯ ⎯ 37 ⎯ ⎯ ⎯ 1 ±10 V μA μA VGS = 0V, ID = 100μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 ⎯ 1 V RDS (ON) ⎯ 100 140 185 240 150 200 250 300 mΩ |Yfs| VSD ⎯ ⎯ 5 0.8 ⎯ 1.1 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A VGS = 1.8V, ID = 1.5A VGS = 1.5V, ID = 0.5A VDS =5V, ID = 2.4A VGS = 0V, I = 0.5A Ciss Coss Crss td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 193 35 23 7 24 24 12 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz ns VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V, RG = 6Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing DMN3300U Document number: DS31181 Rev. 5 - 2 2 of 5 www.diodes.com September 2012 © Diodes Incorporated DMN3300U 8 10 VDS = 5V Pulsed 7 ID, DRAIN CURRENT (A) 8 NEW PRODUCT 6 4 6 5 TA = 150°C TA = 125°C 4 T A = 85°C 3 2 2 1 0 TA = 25°C TA = -55°C 0 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 1 2.0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 1.6 VGS = 1.5V 1.4 1.2 VGS = 2.5V 0.1 1.0 VGS = 4.5V 0.8 0.6 0.4 0.2 0 0.01 0.01 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0.8 ID = 250µA C, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 0.6 0.4 Ciss 0.2 Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN3300U Document number: DS31181 Rev. 5 - 2 3 of 5 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 30 September 2012 © Diodes Incorporated DMN3300U 100 10 -ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) TA = 150°C 0.1 TA = 125°C TA = 85°C 0.01 TA = 25°C TA = -55°C 0.001 PW = 10µs RDS(on) Limited 10 1 DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C TA = 25°C Single Pulse 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 0.01 0.1 PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 178°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 9 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F G DMN3300U Document number: DS31181 Rev. 5 - 2 L 4 of 5 www.diodes.com September 2012 © Diodes Incorporated DMN3300U Suggested Pad Layout NEW PRODUCT Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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