DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 9.2A • • " Green” component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 10V 15mΩ @ VGS = 4.5V V(BR)DSS 30V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • Backlighting Power Management Functions DC-DC Converters • ® Case: POWERDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) ® POWERDI 3333-8 Pin 1 S S S G 1 8 2 7 3 6 4 5 D D D D Bottom View Top View Internal Schematic Top View Ordering Information (Note 2) Part Number DMG7430LFG-7 DMG7430LFG-13 Notes: Case ® POWERDI 3333-8 ® POWERDI 3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied. 2. For packaging details, go to our website at http://www.diodes.com. Marking Information YYWW ADVANCE INFORMATION Product Summary G73 G73 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated 1 of 7 DMG7430LFG Document number: DS35497 Rev. 5 - 2 www.diodes.com February 2012 © Diodes Incorporated DMG7430LFG Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Value 30 ±20 10.5 8.5 ID Units V V A 14 11 90 3.0 22 24 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 4) Avalanche Current (Note 5) L = 0.1mH Repetitive Avalanche Energy (Note 5) L = 0.1mH IDM IS IAR EAR A A A A mJ Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Steady state t<10s Steady state t<10s Steady state t<10s Steady state t<10s Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Case (Note 4) Operating and Storage Temperature Range 80 PD RθJA PD RθJA Units W °C/W W °C/W °C 100 PW = 10µs Single Pulse RθJA = 140°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) RDS(on) Limited ID, DRAIN CURRENT (A) 90 Value 0.9 1.5 142 78 2.2 3.5 59 33 11 -55 to +150 RθJC TJ, TSTG 100 P(PK), PEAK TRANSIENT POIWER (W) ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified 70 60 50 40 30 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation POWERDI is a registered trademark of Diodes Incorporated 2 of 7 DMG7430LFG Document number: DS35497 Rev. 5 - 2 0.01 0.01 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 February 2012 © Diodes Incorporated DMG7430LFG ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 140° C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 7 11 74 0.75 2.5 11 15 1.0 V Static Drain-Source On-Resistance 1.4 - VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VDS = 5V, ID = 20A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr - 1281 145 125 1.2 12.5 26.7 3.6 4.4 5.2 21.2 22.3 5.1 8.5 7.0 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 15V, ID = 12A VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω, IF = 12A, di/dt = 500A/μs IF = 12A, di/dt = 500A/μs 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 3 of 7 DMG7430LFG Document number: DS35497 Rev. 5 - 2 www.diodes.com February 2012 © Diodes Incorporated DMG7430LFG 30 30 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 15 10 20 TA = 125°C 15 TA = 150°C 10 5 TA = 85°C 5 TA = 25°C 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.4 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 0.03 0.02 VGS = 4.5V 0.01 VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 1.0 2.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE-SOURCE VOLTAGE Fig. 5 Typical Transfer Characteristics 4.0 0.04 0.03 0.02 ID = 20A ID = 10A 0.01 30 0 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) Fig. 7 Typical On-Resistance vs. Gate Voltage 1.8 0.03 VGS= 4.5V 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION VDS = 5.0V 25 25 TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0.01 T A = -55°C 0 0 5 10 15 20 25 ID, DRAIN CURRENT Fig. 8 Typical On-Resistance vs. Drain Current and Temperature 30 POWERDI is a registered trademark of Diodes Incorporated 4 of 7 DMG7430LFG Document number: DS35497 Rev. 5 - 2 www.diodes.com 1.6 VGS = 10V ID = 20A 1.4 VGS = 4.5V ID = 10A 1.2 1.0 0.8 0.6 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature February 2012 © Diodes Incorporated 0.02 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 0.03 VGS = 4.5V ID = 10A 0.01 VGS = 10V ID = 20A 2.0 ID = 1mA 1.5 ID = 250µA 1.0 0.5 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance Variation with Temperature 2,000 30 CT, JUNCTION CAPACITANCE (pF) 1,800 IS, SOURCE CURRENT (V) 25 20 TA = 25°C 15 10 5 f = 1MHz 1,600 1,400 1,200 Ciss 1,000 800 600 400 Coss 200 0 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig.12 Diode Forward Voltage vs. Current 1.2 10,000 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance 30 10 VGS GATE THRESHOLD VOLTAGE (V) IDSS, DRAIN LEAKAGE CURRENT (nA) ADVANCE INFORMATION DMG7430LFG TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 9 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Typical Drain-Source Leakage Current vs. Voltage POWERDI is a registered trademark of Diodes Incorporated 5 of 7 DMG7430LFG Document number: DS35497 Rev. 5 - 2 www.diodes.com VDS = 15V ID = 12A 8 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 15 Gate Charge 30 February 2012 © Diodes Incorporated DMG7430LFG ADVANCE INFORMATION Package Outline Dimensions ® POWERDI 3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout X G 8 Y2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 5 G1 Y1 Y 1 4 Y3 X2 C POWERDI is a registered trademark of Diodes Incorporated 6 of 7 DMG7430LFG Document number: DS35497 Rev. 5 - 2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 www.diodes.com February 2012 © Diodes Incorporated DMG7430LFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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