DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features RDS(ON) Max ID Max TA = +25°C 18mΩ @ VGS = 10V 7.5A 28mΩ @ VGS = 4.5V 6.1A V(BR)DSS • • • NEW PRODUCT 30V • • • • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% Unclamped Inductive Switch (UIS) test in production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Applications • • • Mechanical Data • Backlighting Power Management Functions DC-DC Converters • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) POWERDI3333-8 S S G D D 1 8 2 7 3 6 4 5 Pin 1 S D D Bottom View Top View Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3025LFG-7 DMN3025LFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information N3025 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated. DMG3025LFG Document number: DS35642 Rev. 4 – 2 1 of 6 www.diodes.com November 2012 © Diodes Incorporated DMN3025LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State NEW PRODUCT t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 30 ±20 7.5 6.1 ID 10 7.8 2.5 60 14 10 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH IS IDM IAR EAR Units V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol TA = +25°C TA = +70°C Steady State t < 10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 2.0 1.3 61 37 6.4 -55 to 150 PD RθJA RθJC TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±1 V μA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 14 23 9 0.70 2.0 18 28 1.0 V Static Drain-Source On-Resistance 0.8 — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 7.8A VGS = 4.5V, ID = 7.0A VDS = 10V, ID = 7.8A VGS = 0V, IS = 6.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 605 74 58 1.5 5.3 11.6 2 2.4 3.8 4.1 17.9 4.7 5.5 2.6 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 7.8A ns VDD = 15V, VGS = 4.5V, RL = 2.4Ω, RG = 1Ω, ns nC IF = 12A, di/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMG3025LFG Document number: DS35642 Rev. 4 – 2 2 of 6 www.diodes.com November 2012 © Diodes Incorporated 30 25 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 20 15 10 VDS = 5.0V 20 15 10 TA = 150°C T A = 125°C 5 5 TA = 85°C TA = 25°C 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.030 0.025 VGS = 4.5V 0.020 0.015 VGS = 10V 0.010 0.005 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 T A = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.10 0.08 0.06 0.04 ID = 10A 0.02 20 0 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical On-Resistance vs. Drain Current and Gate Voltage 10 1.6 0.08 VGS = 4.5V 0.07 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN3025LFG TA = 150°C 0.05 T A = 125°C 0.04 TA = 85°C 0.03 TA = 25°C TA = -55°C 0.02 1.4 1.2 VGS = 10 V ID = 10A VGS = 4.5V ID = 5A 1.0 0.8 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 30 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMG3025LFG Document number: DS35642 Rev. 4 – 2 3 of 6 www.diodes.com November 2012 © Diodes Incorporated 2.0 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.040 0.035 VGS = 4.5V ID = 5A 0.030 0.025 0.020 0.015 VGS = 10 V ID = 10A 0.010 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature ID = 1mA 1.6 1.4 ID = 250µA 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) 25 IS, SOURCE CURRENT (A) 1.8 10,000 30 TA = 25°C 20 15 10 5 1,000 Ciss 100 Coss Crss f = 1MHz 0 0 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 RDS(on) Limited VGS GATE THRESHOLD VOLTAGE (V) VDS = 15V ID = 10A PW = 10µs ID, DRAIN CURRENT (A) NEW PRODUCT DMN3025LFG 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C Single Pulse 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 12 0.01 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMG3025LFG Document number: DS35642 Rev. 4 – 2 4 of 6 www.diodes.com November 2012 © Diodes Incorporated DMN3025LFG r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 72°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMG3025LFG Document number: DS35642 Rev. 4 – 2 5 of 6 www.diodes.com November 2012 © Diodes Incorporated DMN3025LFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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