SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3097 TO-126 Plastic-Encapsulate Transistors 2SC3097 TRANSISTOR (NPN) TO-126 FEATURES Power amplifier applications MAXIMUM RATINGS* TA=25℃ unless otherw ise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current –Continuous Icp Value Units 1350 V 800 V 9 V 1.5 A Collector Current –Pulse 3 A PC Collector Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature ELECTRICAL Symbol 2.COLLECTOR 3.EMITTER 123 Marking: NZP 2SC3097 **** ℃ -55-150 CHARACTERISTICS(Tamb=25℃ Parameter 1.BASE unless otherw ise specified) Test conditions MIN TYP M AX UNIT Collector-base breakdow n voltage V(BR)CBO IC=0.1mA,IE=0 1350 V Collector-emitter breakdow n voltage V(BR)CEO IC=1mA,IB=0 800 V Emitter-base breakdow n voltage V(BR)EBO IE=0.1mA,IC=0 9 V Collector cut-off current ICBO VCB=1300V,IE=0 100 μA Emitter cut-off current IEBO VEB=9V,IC=0 10 μA DC current gain hFE VCE=5V,IC=100mA hFE VCE=5V,IC=1.5A Collector-emitter saturation voltage VCE(sat) IC=0.5A,IB=0.2A Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.2A Transition frequency Collector output capacitance tstg Storage time 5 25 0.8 UI9600, Ic=0.5A CLASSIFICATION OF hFE VCE=5V,IC=100mA 24--35 1/3 1.5 V 1 V 3 VCB=10V,f=1MHz tf Fall time Range Cob VCE=10V,IC=100mA 35 MHz 30 tr Raise time Rank fT 24 1 pF 4 μS 4 μS 4 μS SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3097 Characteristic curve Secure w orking area ( DC ) Ptot～ T Relation curve HFE～ IC Relation curve VCES～ IC Relation curve VBES～ IC Relation curve 2/3 SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3097 3/3