VS-ST183SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 195 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance • Compression bonding TO-209AB (TO-93) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IT(AV) 195 A VDRM/VRRM 400 V, 800 V VTM 1.80 V ITSM at 50 Hz 4900 A ITSM at 60 Hz 5130 A IGT 200 mA TJ -40 °C to 125 °C Package TO-209AB (TO-93) Diode variation Single SCR TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 195 A 85 °C 306 IT(RMS) ITSM I2t 50 Hz 4900 60 Hz 5130 50 Hz 120 60 Hz 110 VDRM/VRRM A kA2s 400 to 800 V tq 15 to 20 μs TJ -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 VS-ST183S 40 Revision: 11-Mar-14 Document Number: 94369 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM 100 µs 180° el 50 Hz 570 370 900 610 7040 5220 400 Hz 560 360 940 630 3200 2280 1000 Hz 500 300 925 610 1780 1200 2500 Hz 340 190 760 490 880 560 Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature 50 50 50 VDRM VDRM VDRM 50 - - 60 Equivalent values for RC circuit 85 60 47/0.22 UNITS 85 V A/μs 60 47/0.22 A 85 °C /μF 47/0.22 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 74 °C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage VALUES UNITS 195 A 85 °C 306 4900 No voltage reapplied 5130 100 % VRRM reapplied 4310 No voltage reapplied A 4120 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 120 110 85 kA2s 78 I2t t = 0.1 to 10 ms, no voltage reapplied 1200 VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.40 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.45 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.67 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA Revision: 11-Mar-14 Document Number: 94369 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned-on current Typical delay time dI/dt td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/μs VR = 50 V, tp = 500 μs, dV/dt: 200 V/μs minimum Maximum turn-off time maximum TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt VALUES UNITS 1000 A/μs 1.1 15 μs 20 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = TJ maximum VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.105 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads Mounting torque, ± 10 % 31 (275) Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 24.5 (210) N·m (lbf · in) 280 g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Mar-14 Document Number: 94369 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors 130 130 120 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) ST183S Series RthJC (DC) = 0.105 K/W Ø 110 Conduction angle 100 90 60 °C 30 °C 120 °C 90 °C ST183S Series RthJC (DC) = 0.105 K/W 120 110 Ø Conduction period 100 90 60° 80 180° DC 120° 180 °C 80 70 0 20 40 60 80 100 120 140 160 180 200 100 50 0 Average On-State Current (A) 200 150 250 300 350 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 350 Maximum Average On-State Power Loss (W) 0 0.3 200 R -Δ 50 W ST183S Series TJ = 125 °C K/ Conduction angle 08 100 0. Ø = 150 250 SA RMS limit 0. 16 0.2 K/W K/ W W 200 R th 250 300 K/ 300 1 180° 120° 90° 60° 30° 0. Maximum Average On-State Power Loss (W) 90° 30° K/W 0.4 K/W 0.5 K/W 0.8 K /W 150 100 1.2 K/W 50 0 0 20 40 60 80 100 120 140 160 180 200 50 25 Average On-State Current (A) 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-State Power Loss (W) 500 DC 180° 120° 90° 60° 30° 450 400 350 300 250 200 RMS limit Ø 150 Conduction period 100 ST183S Series TJ = 125 °C 50 0 Maximum Average On-State Power Loss (W) 500 450 400 R 350 0.1 th SA = 0. 8 K/ W 0.1 6 0.2 K/W K/W 0.3 K/W 0.4 K 0.5 K /W /W 0.8 K/W 1.2 K/W 300 250 200 150 100 50 K/ W -Δ R 0 0 50 100 150 200 250 300 Average On-State Current (A) 350 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 11-Mar-14 Document Number: 94369 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors 1 4500 4000 Steady state value RthJC = 0.105 K/W (DC operation) ZthJC - Transient Thermal Impedance (K/W) Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated VRRM applied following surge Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 3500 3000 2500 0.1 0.01 ST183S Series ST183S Series 0.001 0.001 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 10 Square Wave Pulse Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics 5000 250 Qrr - Maximum Reverse Recovery Charge (µC) Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained 4500 Peak Half Sine Wave On-State Current (A) 0.01 Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 4000 3500 3000 2500 A 00 =5 A 00 =3 I TM 0A = 20 ST183S Series TJ = 125 °C 200 I TM I TM 150 I TM = 100 A 100 ITM = 50 A 50 ST183S Series 2000 0.01 0 0.1 1 0 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovered Charge Characteristics 10 000 160 Irr - Maximum Reverse Recovery Current (A) Instantaneous On-State Current (A) 20 ST183S Series TJ = 125 °C 1000 TJ = 25 °C A 00 = 5 00 A I TM = 3 A I TM 200 = A I TM = 100 M IT 0A =5 140 120 100 80 I TM 60 40 ST183S Series TJ = 125 °C 20 0 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 0 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 10 - Reverse Recovery Current Characteristics Revision: 11-Mar-14 Document Number: 94369 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 400 1000 1500 1000 200 500 100 50 Hz 2500 3000 5000 ST183S Series Sinusoidal pulse TC = 60 °C tp Peak On-State Current (A) Peak On-State Current (A) 10 000 100 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 1000 1000 50 Hz 100 400 1500 2500 200 3000 5000 ST183S Series Sinusoidal pulse TC = 85 °C tp 100 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 200 50 Hz 500 1000 3000 1500 1000 400 100 2500 5000 100 10 000 tp ST183S Series Trapezoidal pulse TC = 60 °C dI/dt = 50 A/µs Peak On-State Current (A) Peak On-State Current (A) 10 000 10 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 100 400 1000 2500 500 50 Hz 200 1500 3000 100 5000 10 000 tp ST183S Series Trapezoidal pulse TC = 85 °C dI/dt = 50 A/µs 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 10 000 2500 50 Hz 400 1000 500 200 100 1500 3000 5000 100 10 000 tp ST183S Series Trapezoidal pulse TC = 60 °C dI/dt = 100 A/µs 10 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 50 Hz 1000 1000 2500 500 400 200 100 1500 3000 100 5000 tp 10 000 ST183S Series Trapezoidal pulse TC = 85 °C dI/dt = 100 A/µs 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Revision: 11-Mar-14 Document Number: 94369 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors 100 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 10 000 1 2 5 10 0.5 1000 0.3 0.2 0.1 100 ST183S Series Sinusoidal pulse tp ST183S Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 5 1000 0.3 0.5 10 2 1 0.2 0.1 100 tp 10 10 10 100 1000 10 10 000 100 1000 10 000 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) IGD 0.1 0.001 0.01 TJ = 40 °C VGD TJ = 25 °C 1 tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (b) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST183S Series 0.1 1 (2) (3) (4) Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Revision: 11-Mar-14 Document Number: 94369 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183SP Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 18 3 S 08 P F K 0 P 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 3/4" 16UNF-2A 8 - 9 - 10 - Reapplied dV/dt code (for tq test condition) dV/dt - tq combinations available dV/dt (V/µs) 200 tq code FL tq (µs) 15 0 = Eyelet terminals 20 FK (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 11 - None = standard production - P = Lead (Pb)-free Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95077 Revision: 11-Mar-14 Document Number: 94369 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) Glass metal seal 19 (0.75) MAX. Ø 8.5 (0.33) Ø 4.3 (0.17) Red silicon rubber C.S. 0.51 mm2 (0.0008 s.i.) Red cathode 213.5 ± 10 (8.41 ± 0.39) White gate 238.5 ± 10 (9.39 ± 0.39) Red shrink 75 (2.95) MIN. White shrink Ø 28.5 (1.12) MAX. 28.5 (1.12) MAX. 16 (0.63) MAX. 21 (0.83) MAX. SW 32 3/4"-16UNF-2A 35 (1.38) MAX. 0° to 15° 4 MAX. 38 MAX. Fast-on terminals AMP. 280000-1 REF-250 23 MIN. Flexible lead C.S. 35 mm2 (0.054 s.i.) Document Number: 95077 Revision: 19-May-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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