VS-ST183C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • International standard case TO-200AB (A-PUK) • Guaranteed high dV/dt • Guaranteed high dI/dt • High surge current capability • Low thermal impedance TO-200AB (A-PUK) • High speed performance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-200AB (A-PUK) Diode variation Single SCR IT(AV) 370 A VDRM/VRRM 400 V, 800 V VTM 1.80 V ITSM at 50 Hz 4900 A ITSM at 60 Hz 5130 A IGT 200 mA TC/Ths 55 °C TYPICAL APPLICATIONS • • • • Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 690 A 25 °C 4900 60 Hz 5130 50 Hz 120 60 Hz 110 Range TJ UNITS 370 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 800 V 10 to 20 μs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST183C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 40 Revision: 17-Dec-13 Document Number: 94368 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM UNITS 100 µs 180° el 50 Hz 770 660 1220 1160 5450 4960 400 Hz 730 600 1270 1090 2760 2420 1000 Hz 600 490 1210 1040 1600 1370 2500 Hz 350 270 860 730 800 680 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 VDRM VDRM VDRM 50 - - Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit 40 55 47/0.22 40 55 47/0.22 40 A V A/μs 55 °C μF 47/0.22 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms VALUES UNITS 370 (130) A 55 (85) °C 690 4900 No voltage reapplied 5130 100 % VRRM reapplied 4310 No voltage reapplied A 4120 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 120 110 85 kA2s 78 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1200 Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.40 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.45 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.67 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA Revision: 17-Dec-13 Document Number: 94368 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current Typical delay time dI/dt TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/μs VR = 50 V, tp = 500 μs, dV/dt: See table in device code minimum Maximum turn-off time TEST CONDITIONS maximum VALUES UNITS 1000 A/μs 1.1 10 μs 20 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink SYMBOL TEST CONDITIONS - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Approximate weight See dimensions - link at the end of datasheet UNITS °C 0.17 DC operation double side cooled Mounting force, ± 10 % Case style VALUES TJ K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) Revision: 17-Dec-13 Document Number: 94368 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION Single Side Double Side Single Side Double Side 180° 0.015 0.016 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 Ø Conduction angle 80 70 60 30° 50 60° 180° 90° Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 ST183C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 110 100 90 Ø 80 Conduction angle 70 60 50 30° 120° 30 40 0 80 40 120 160 200 0 240 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 130 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 Ø 80 Conduction period 70 60 50 30° 60° 90° 40 DC 120° 180° 30 ST183C..C Series (Double side cooled) RthJC (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (°C) 120 Maximum Allowable Heatsink Temperature (°C) 180° 90° 60° 40 120° 110 100 90 Ø 80 Conduction period 70 60 50 90° 40 30° 30 20 180° 60° DC 120° 20 0 50 100 150 200 250 300 350 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 400 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 4 - Current Ratings Characteristics Revision: 17-Dec-13 Document Number: 94368 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors 5000 1000 180° 120° 90° 60° 30° 800 700 600 RMS limit 500 400 Ø 300 Conduction angle 200 3500 3000 ST183C..C Series 2000 0.01 0 100 150 200 250 300 350 400 450 50 4000 2500 ST183C..C Series TJ = 125 °C 100 0 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 4500 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 900 0.1 Pulse Train Duration (s) Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled DC 180° 120° 90° 60° 30° 1200 1000 800 RMS limit 600 Ø 400 Conduction period 200 ST183C..C Series TJ = 125 °C 0 0 100 200 400 300 500 600 Instantaneous On-State Voltage (A) Maximum Average On-State Power Loss (W) 1400 10 000 ST183C..C Series 1000 TJ = 25 °C TJ = 125 °C 100 1 700 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-State Voltage (V) Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Fig. 9 - On-State Voltage Drop Characteristics 4500 1 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 ST183C..C Series 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled ST183C..C Series ZthJ-hs - Transient Themal Impedance (K/W) Peak Half Sine Wave On-State Current (A) 1 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Revision: 17-Dec-13 Document Number: 94368 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors 160 ITM = 500 A ST183C..C Series TJ = 125 °C 200 200 A 150 100 A 100 50 A 50 120 100 80 60 40 ST183C..C Series TJ = 125 °C 20 0 0 0 20 40 60 80 100 0 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 500 50 Hz 400 200 100 1500 1000 2500 3000 5000 ST183C..C Series Sinusoidal pulse TC = 40 °C tp 10 000 10 000 Peak On-State Current (A) 10 000 Peak On-State Current (A) ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 140 300 A Irr - Maximum Reverse Recovery Current (A) Qrr - Maximum Reverse Recovery Charge (µC) 250 100 1000 500 1000 50 Hz 400 200 100 1500 1000 2500 3000 5000 tp 10 000 100 10 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM ST183C..C Series Sinusoidal pulse TC = 55 °C 100 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 400 200 100 50 Hz 500 1000 1500 1000 2500 3000 5000 tp ST183C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 50 A/µs 100 10 100 1000 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 400 200 100 50 Hz 1000 1500 1000 2500 3000 tp 5000 ST183C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 50 A/µs 100 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics Revision: 17-Dec-13 Document Number: 94368 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 50 Hz 1000 500 2500 Peak On-State Current (A) Peak On-State Current (A) 10 000 Vishay Semiconductors 400 200 100 1500 3000 5000 100 ST183C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 100 A/µs 10 000 tp 100 1000 50 Hz 1000 1500 2500 500 1000 400 200 100 3000 100 5000 ST183C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 100 A/µs 10 000 tp 10 10 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 10 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics 100 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 10 000 1 0.5 0.3 1000 2 4 10 0.2 0.1 100 ST183C..C Series Sinusoidal pulse tp ST183C..C Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 2 4 10 1 1000 0.3 0.5 0.2 0.1 100 tp 10 10 100 1000 10 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs IGD 0.1 0.001 0.01 TJ = 40 °C VGD tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (b) TJ = 25 °C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST183C..C Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Revision: 17-Dec-13 Document Number: 94368 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST183C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 18 3 C 08 C H K 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (A-PUK) 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code dV/dt - tq combinations available dV/dt (V/µs) 10 12 tq (µs) 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN* FM FL* FP FK 400 HN HM HL HP HK * Standard part number. All other types available only on request. LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 17-Dec-13 Document Number: 94368 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000