VS-40TPS16PbF, VS-40TPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 40 A FEATURES 2 (A) • High voltage (up to 1600 V) • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC • 125 °C max. operating junction temperature 1 (K) (G) 3 TO-247AC • Halogen-free according to IEC 61249-2-21 definition (-M3 only) PRODUCT SUMMARY Package TO-247AC Diode variation Single SCR IT(AV) 35 A VDRM/VRRM 1600 V APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery charge VTM 1.45 V IGT 150 mA TJ - 40 °C to 125 °C DESCRIPTION The VS-40TPS16... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER IT(AV) VALUES UNITS 35 Sinusoidal waveform A IRMS 55 VRRM/VDRM 1600 V 500 A 1.45 V dV/dt 1000 V/μs dI/dt 100 A/μs - 40 to 125 °C ITSM 40 A, TJ = 25 °C VT TJ VOLTAGE RATINGS PART NUMBER VS-40TPS16PbF, VS-40TPS16-M3 Revision: 10-Nov-11 VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA 1600 1700 10 Document Number: 94389 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16PbF, VS-40TPS16-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state current as AC switch Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) TEST CONDITIONS VALUES TC = 79 °C, 180° conduction half sine wave IT(RMS) ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 35 55 10 ms sine pulse, rated VRRM applied 500 10 ms sine pulse, no voltage reapplied 600 10 ms sine pulse, rated VRRM applied Initial TJ = TJ maximum 1250 10 ms sine pulse, no voltage reapplied 1760 t = 0.1 to 10 ms, no voltage reapplied 12 500 Low level value of threshold voltage VT(TO)1 1.02 High level value of threshold voltage VT(TO)2 1.23 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 TJ = 125 °C UNITS 9.74 7.50 A A2s A2s V m Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/µs Maximum holding current IH 150 Maximum latching current IL 300 Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage IRRM/IDRM TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM 0.5 mA 10 dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 1000 V/µs SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage PGM 10 PG(AV) 2.5 IGM 2.5 - VGM 10 TJ = - 40 °C Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger VGT IGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Revision: 10-Nov-11 TJ = 25 °C 4.0 Anode supply = 6 V resistive load 2.5 TJ = 125 °C 1.7 TJ = - 40 °C 270 TJ = 25 °C 150 TJ = 125 °C 80 TJ = 25 °C, for 40TPS08A 40 TJ = 125 °C, VDRM = Rated value W A V mA 0.25 V 6 mA Document Number: 94389 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16PbF, VS-40TPS16-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heatsink RthCS TEST CONDITIONS VALUES UNITS - 40 to 125 °C DC operation 0.6 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Case style TO-247AC 40TPS.. Series R thJC (DC) = 0.6 °C/ W 120 110 Conduction Angle 100 30° 60° 90° 90 120° 180° 80 70 0 10 20 30 40TPS16 Maximum Avera g e On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Marking device 130 60 180° 120° 90° 60° 30° 50 40 20 Conduction Angle 40TPS.. Series TJ= 125°C 10 0 40 0 110 Conduction Period 100 60° 90° 120° 180° DC 70 0 10 20 30 40 50 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Revision: 10-Nov-11 60 Maximum Averag e On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 120 80 10 15 20 25 30 35 40 Fig. 3 - On-State Power Loss Characteristics 40TPS.. Series RthJC (DC) = 0.6 °C/ W 30° 5 Avera ge On-sta te Current (A) Fig. 1 - Current Rating Characteristics 90 RMS Limit 30 Average On-state Current (A) 130 °C/W 40 80 DC 180° 120° 90° 60° 30° 70 60 50 40 RMSLimit 30 Conduction Period 20 40TPS.. Series TJ = 125 °C 10 0 0 10 20 30 40 50 60 Avera ge On-sta te Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94389 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16PbF, VS-40TPS16-M3 550 Vishay Semiconductors At Any Ra ted Load Condition And With Rated V RRM Ap plied Following Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 500 450 400 350 300 40TPS.. Series 250 1 10 600 Peak Half Sine Wa ve On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com Ma ximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reap p lied Rated VRRM Reap p lied 550 500 450 400 350 300 40TPS.. Series 250 0.01 100 0.1 1 Pulse Tra in Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instanta neous On-sta te Current (A) 100 10 TJ= 25°C TJ= 125°C 40TPS.. Series 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated di/ dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) 1 TJ = -40 °C TJ = 125 °C TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 40TPS.. 0.1 Frequenc y Limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 10-Nov-11 Document Number: 94389 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16PbF, VS-40TPS16-M3 Transient Thermal Impeda nc e Z thJC (°C/W) www.vishay.com Vishay Semiconductors 1 Steady State Value (DC Opera tion) D = 0.50 D = 0.33 D = 0.25 D = 0.17 0.1 D = 0.08 Single Pulse 40TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 40 T P S 16 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: T = Thyristor 4 - Package: 5 - 6 - Voltage rating (16 = 1600 V) 7 - Environmental digit: P = TO-247 Type of silicon: S = Standard recovery rectifier PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40TPS16PbF 25 500 Antistatic plastic tubes VS-40TPS16-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 10-Nov-11 www.vishay.com/doc?95223 TO-247AC PbF www.vishay.com/doc?95226 TO-247AC -M3 www.vishay.com/doc?95007 Document Number: 94389 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000