VS-ST223C..C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 390 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • International standard case TO-200AB (A-PUK) • Guaranteed high dI/dt • High surge current capability • Low thermal impedance TO-200AB (A-PUK) • High speed performance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-200AB (A-PUK) Diode variation Single SCR IT(AV) 390 A VDRM/VRRM 400 V, 800 V VTM 1.58 V ITSM at 50 Hz 5260 A ITSM at 60 Hz 5510 A IGT 200 mA TC/Ths 55 °C TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 745 A 25 °C 5850 60 Hz 6130 50 Hz 171 60 Hz 156 Range TJ UNITS 390 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 800 V 10 to 30 μs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST223C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 Revision: 02-Jun-15 Document Number: 93672 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180° el 100 µs 180° el 50 Hz 930 800 1430 1220 5870 400 Hz 910 770 1490 1300 3120 2740 1000 Hz 780 650 1430 1260 1880 1640 2500 Hz 490 400 1070 920 1000 860 Recovery voltage Vr Voltage before turn-on Vd Heatsink temperature 50 50 50 VDRM VDRM 50 - 40 Equivalent values for RC circuit 5240 VDRM Rise of on-state current dI/dt 55 A V - 40 47/0.22 UNITS 55 A/μs 40 47/0.22 55 °C μF 47/0.22 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing A °C 745 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 5850 6130 A 4920 5150 Sinusoidal half wave, initial TJ = TJ maximum 171 156 121 100 % VRRM reapplied I2t t = 0.1 to 10 ms, no voltage reapplied VTM kA2s 110 1710 ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.58 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.05 High level value of threshold voltage VT(TO)2 Maximum peak on-state voltage UNITS 55 (85) DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current VALUES 390 (150) (I > x IT(AV)), TJ = TJ maximum 1.09 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.82 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current VALUES SYMBOL TEST CONDITIONS dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 0.78 Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source Maximum turn-off time tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/μs VR = 50 V, tp = 500 μs, dV/dt: See table in device code MIN. MAX. UNITS A/μs μs 10 30 Revision: 02-Jun-15 Document Number: 93672 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION Single Side Double Side Single Side Double Side 180° 0.015 0.017 0.011 0.011 120° 0.019 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 02-Jun-15 Document Number: 93672 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com Vishay Semiconductors 1 30 ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ- hs (D C ) = 0 .1 7 K / W 120 110 100 90 C o nd uc tio n A ng le 80 70 60 30° 6 0° 50 90° 1 2 0° 40 180 ° 30 0 50 100 150 20 0 2 50 3 00 M a x im u m A llo w a b le H e a t sin k T e m p e rat u re (° C ) M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (°C ) 130 ST 2 2 3 C ..C S e rie s (D o ub le Sid e C o o le d ) R thJ- hs (D C ) = 0 .0 8 K/ W 1 20 1 10 1 00 90 C o ndu ction Pe rio d 80 70 30° 60 60° 50 90° 1 2 0° 40 1 8 0° 30 DC 20 0 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 1000 ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R t hJ- hs (D C ) = 0 .1 7 K / W 12 0 11 0 10 0 90 80 C o ndu ctio n Pe rio d 70 60 30 ° 60° 50 90° 40 1 20° 30 180 ° DC 20 0 50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0 Maximum Average On -state Power Loss (W ) M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C ) 13 0 180° 120° 90° 60° 30° 800 600 C o nduc tio n A ng le 200 ST223C..C Series TJ = 125°C 0 0 Maxim um Average O n-sta te Power Loss (W ) M a xim u m A llo w a b le H e a tsin k T e m p er a tu r e ( °C ) 1 00 90 C o nduc tion An gle 70 30° 60° 50 90° 120 ° 1 8 0° 40 30 20 0 10 0 200 3 00 300 400 500 1400 S T 2 2 3 C ..C S e rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 8 K / W 60 200 Fig. 5 - On-State Power Loss Characteristics 1 30 80 100 Average On -state Current (A) Fig. 2 - Current Ratings Characteristics 1 10 RM S Lim it 400 A v e ra g e O n -s ta t e C u rre n t (A ) 1 20 10 0 2 00 3 00 40 0 50 0 60 0 70 0 8 00 4 00 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 5 00 DC 180° 120° 90° 60° 30° 1200 1000 800 RMS Limit 600 400 C o nd uc tio n Pe rio d 200 ST223C..C Series TJ = 125°C 0 0 100 200 300 400 500 600 700 800 Average O n-state Curren t (A) Fig. 6 - On-State Power Loss Characteristics Revision: 02-Jun-15 Document Number: 93672 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com At Any Rated Load Condition An d W ith Rated V RRM Applied Followin g Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5000 4500 4000 3500 3000 ST223C..C Series 2500 1 10 1 00 1 Tr a n sie n t Th e rm a l Im p e d a n c e Z thJ-hs (K/ W ) Peak Half Sine W ave On -state Current ( A) 5500 Vishay Semiconductors ST 2 2 3 C ..C S e rie s 0 .1 S t e a d y S ta t e V a lu e R thJ-h s = 0 .1 7 K/ W (S in g le Sid e C o o le d ) R thJ-hs = 0 .0 8 K/ W (D o u b le S id e C o o le d ) 0 .0 1 0 .0 0 1 0 .0 0 1 3500 3000 S T2 2 3 C ..C S e r ie s 1 M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µC ) P e a k H a lf Sin e W a v e O n -st at e C u rre n t (A ) 4000 0.1 P u lse T ra in D u ra tio n (s) I TM = 5 00 A S T 2 2 3 C ..C S e rie s TJ = 1 2 5 °C 2 00 30 0 A 20 0 A 1 50 1 00 A 1 00 50 A 50 0 0 20 40 60 80 1 00 R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Reverse Recovered Charge Characteristics 10000 16 0 1000 TJ = 25°C TJ = 125°C ST223C..C Series 100 0 2 4 6 8 10 In sta ntaneous O n-state Voltage (V ) Fig. 9 - On-State Voltage Drop Characteristics M a xim u m R e v e rse R e c o v e ry C u rr e n t - Irr (A ) In st anta neous On-state Current (A) 10 2 50 M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P u lse T ra in D ura t io n . C o n t ro l 5500 O f C o n d u c t io n M a y N o t Be M a in ta in e d . In it ia l TJ = 1 2 5° C 5000 N o V o lta g e R e a p p lie d R a te d V RRMR e a p p lie d 4500 2000 0.01 1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 6000 2500 0 .1 S q ua re W a v e P u lse D u rat io n (s) N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled (D C O p e ra tio n ) 0 .0 1 IT M = 50 0 A 14 0 30 0 A 12 0 20 0 A 10 0 A 10 0 50 A 80 60 40 ST 2 2 3 C ..C S e rie s TJ = 1 2 5 °C 20 0 0 20 40 60 80 10 0 R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s) Fig. 12 - Reverse Recovered Current Characteristics Revision: 02-Jun-15 Document Number: 93672 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com Vishay Semiconductors P e a k O n - st a t e C u rre n t (A ) 1 E4 Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 µF V D = 80 % V D RM Snubb er c ircuit R s = 4 7 o hm s C s = 0. 22 µ F V D = 80 % V D RM 1 50 0 200 4 00 100 0 5 00 1 00 5 0 Hz 1 50 0 2 50 0 1 E3 400 20 0 1 00 0 50 0 100 50 Hz 2 50 0 3 00 0 3 00 0 5 00 0 1 0 00 0 ST2 23 C.. C Serie s Sinuso idal pulse TC = 40°C tp 1 E2 1E1 1 E2 5 00 0 1 E3 tp 10 00 0 1E4 ST2 23 C.. C Se ries Sinuso idal pulse TC = 55°C 1 E1 1E 1 1E2 1 E3 1E4 P u lse Ba se w id t h (µ s) P u lse Ba se w id t h (µ s) Fig. 13 - Frequency Characteristics P e a k O n -sta t e C u rre n t (A ) 1E4 Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 µF V D = 8 0 % V D RM Snu bbe r c irc uit R s = 4 7 o hm s C s = 0.22 µF V D = 80% V D RM 1E3 2 50 0 15 0 0 10 00 5 00 400 2 00 10 0 50 Hz 2 50 0 3 00 0 3 00 0 5 00 0 1E2 1 50 0 10 00 5 00 400 2 00 1 0 0 5 00 0 10 0 00 ST2 23 C..C Series Trape zoidal pulse TC = 55°C di/dt = 50A /µs 1 00 00 ST22 3C ..C Se rie s Tra pe zoidal pulse TC = 40°C di/dt = 5 0A /µ s tp 1E1 1 E1 50 Hz 1 E2 1 E3 tp 1E4 1 E1 1 E2 1E3 1E4 P u lse Ba se w id t h (µ s) P u lse B ase w idt h (µ s) Fig. 14 - Frequency Characteristics P e a k O n - sta t e C u rre n t (A ) 1E4 Snubbe r circ uit R s = 4 7 o hm s C s = 0.2 2 µF V D = 80% V D RM Snubb er c ircu it R s = 47 o hm s C s = 0 .22 µF V D = 80 % V D RM 1E3 25 0 0 1 50 0 1 0 00 500 10 0 4 00 20 0 5 0 Hz 2 50 0 3 00 0 4 00 2 0 0 1 00 50 Hz 5 00 0 1 00 0 0 ST223 C. .C Se ries Tra pezo idal pulse TC = 40°C di/d t = 1 00A /µs tp 1E1 1 E1 1 000 5 00 3 000 5 00 0 1E2 1 50 0 1 E2 1E 3 ST223 C. .C Se ries Trap ezo id al p ulse TC = 55°C di/dt = 10 0A /µs 10 00 0 tp 1E4 1 E1 1E 2 1E3 1E4 P u lse Ba se w id t h (µ s) P u lse B ase w id t h (µ s) Fig. 15 - Frequency Characteristics Revision: 02-Jun-15 Document Number: 93672 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com Vishay Semiconductors 1E 5 ST22 3C. .C Se ries Re cta ngular pulse di/d t = 5 0A/µs P e ak O n -sta t e C ur re n t (A ) tp 1E 4 0.5 1E 3 1 2 4 10 2 0 jo ules per pulse 20 jo ule s p er pulse 5 2 1 0 .3 0. 2 0.5 0. 3 0.1 0. 2 0 .1 1E 2 tp 1E 1 1 E1 10 ST223 C ..C Se ries Sinuso id al p ulse 1E2 1 E3 1 E1 1 E4 1E 2 1E3 1E4 P u lse B ase w id t h (µ s) P u lse B a se w idt h (µ s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 µ s (1) (2) (3) (4) PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 20 m s 10 m s 5m s 3 .3 m s (a ) (b ) Tj=2 5 °C 1 Tj=-40 °C Tj=1 25 °C In st an t a n e o us G a te V o lt a g e ( V ) 1 00 (1) (2) (3 ) ( 4 ) VGD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00 In sta n t a n e o u s G at e C u rr e n t (A ) Fig. 17 - Gate Characteristics Revision: 02-Jun-15 Document Number: 93672 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST223C..C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 22 3 C 08 C H K 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn off 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (A-PUK) 8 - Reapplied dV/dt code (for tq test condition) 9 - 10 - dV/dt - tq combinations available dV/dt (V/µs) 10 0 = Eyelet term. 12 (gate and aux. cathode unsoldered leads) tq (µs) 15 18 1 = Fast-on term. 20 (gate and aux. cathode unsoldered leads) 25 30 2 = Eyelet term. tq code (gate and aux. cathode soldered leads) 20 50 100 200 400 CN CM CL CP CK --- DN DM DL DP DK --- EN EM EL EP EK --- FN* FM FL* FP FK --- --HL HP HK HJ HH * Standard part number. All other types available only on request. 3 = Fast-on term. (gate and aux. cathode soldered leads) 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 02-Jun-15 Document Number: 93672 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000