VS-ST203C Series Datasheet

VS-ST203C Series
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Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
TO-200AB (A-PUK)
• High speed performance
• Designed and qualified for industrial level
PRODUCT SUMMARY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Package
TO-200AB (A-PUK)
Diode variation
Single SCR
IT(AV)
370 A
VDRM/VRRM
1000 V, 1200 V
VTM
1.72 V
ITSM at 50 Hz
5260 A
• Induction heating
ITSM at 60 Hz
5510 A
• All types of force-commutated converters
IGT
200 mA
TC/Ths
55 °C


TYPICAL APPLICATIONS
• Inverters
• Choppers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
IT(RMS)
ITSM
I2t
TEST CONDITIONS
VALUES
Ths
Ths
A
55
°C
700
A
25
°C
50 Hz
5260
60 Hz
5510
50 Hz
138
60 Hz
126
VDRM/VRRM
tq
Range
TJ
UNITS
370
A
kA2s
1000 to 1200
V
20 to 30
μs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST203C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
10
1000
1100
12
1200
1300
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
180° el
100 µs
180° el
50 Hz
860
750
1340
1160
5620
5020
400 Hz
840
706
1400
1220
2940
2590
1000 Hz
700
580
1350
1170
1750
1520
2500 Hz
430
340
980
830
910
780
Recovery voltage Vr
Voltage before turn-on Vd
50
50
50
VDRM
VDRM
VDRM
50
-
-
Rise of on-state current dI/dt
Heatsink temperature
40
Equivalent values for RC circuit
55
40
47/0.22
UNITS
55
47/0.22
A
V
A/μs
40
55
°C
μF
47/0.22
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle, 
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
VALUES
UNITS
370 (140)
A
55 (85)
°C
700
5260
No voltage
reapplied
5510
100 % VRRM 
reapplied
4630
No voltage
reapplied
A
4420
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM 
reapplied
138
126
98
kA2s
89
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
1380
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum, 
tp = 10 ms sine wave pulse
1.72
Low level value of threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
1.17
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
1.22
Low level value of forward slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.92
High level value of forward slope
resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
0.83
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
V
m
mA
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SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of rise
of turned on current
dI/dt
Typical delay time
TJ = TJ maximum, VDRM = Rated VDRM 
ITM = 2 x dI/dt
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5  source
tq
TJ = TJ maximum, 
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
minimum
Maximum turn-off time
TEST CONDITIONS
maximum
VALUES
UNITS
1000
A/μs
0.8
20
μs
30
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM, 
higher value available on request
500
V/μs
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
PGM
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate currrent required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
TJ = TJ maximum, f = 50 Hz, d % = 50
60
10
10
TJ = TJ maximum, tp  5 ms
20
5
TJ = 25 °C, VA = 12 V, Ra = 6 
TJ = TJ maximum, rated VDRM applied
200
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
SYMBOL
TEST CONDITIONS
TJ
- 40 to 125
TStg
- 40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
DC operation double side cooled
0.08
0.033
DC operation double side cooled
0.017
Approximate weight
Case style
0.17
DC operation single side cooled
Mounting force, ± 10 %
See dimensions - link at the end of datasheet
°C
K/W
4900
(500)
N
(kg)
50
g
TO-200AB (A-PUK)
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RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGLE
RECTANGULAR CONDUCTION
Single Side
Double Side
Single Side
Double Side
180°
0.015
0.017
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC


130
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
Ø
90
Conduction angle
80
70
60
180°
30°
50
60°
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
90° 120°
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
130
110
100
90
Ø
Conduction angle
80
70
60
50
180°
40
30
40
30°
0
50
150
100
200
250
0
Average On-State Current (A)
90°
120°
100
200
300
400
500
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
130
130
110
100
90
Ø
80
Conduction period
70
60
50
60°
40
30°
DC
90°
30
120°
180°
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
60°
20
110
100
90
Ø
80
Conduction period
70
60
50
DC
40
30
20
30°
60°
120°
90°
180°
20
0
50
100
150
200
250
300
350
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
400
0
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
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5500
180°
120°
90°
60°
30°
900
800
700
600
RMS limit
500
400
Ø
300
Conduction angle
200
ST203C..C Series
TJ = 125 °C
100
4000
3500
3000
ST203C..C Series
2000
0.01
100 150 200 250 300 350 400 450
50
4500
2500
0
0
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
5000
Peak Half Sine Wave
On-State Current (A)
Maximum Average On-State
Power Loss (W)
1000
Average On-State Current (A)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
DC
180°
120°
90°
60°
30°
800
RMS limit
600
Ø
Conduction period
400
ST203C..C Series
TJ = 125 °C
200
0
0
100
200
300
400
500
600
700
Instantaneous On-State Current (A)
Maximum Average On-State
Power Loss (W)
1400
1000
10 000
ST203C..C Series
1000
TJ = 25 °C
TJ = 125 °C
100
1.0
800
1.5
Average On-State Current (A)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 6 - On-State Power Loss Characteristics
5000
1
At any rated load condition and with
rated VRRM applied following surge
ST203C..C Series
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
3500
3000
2500
ZthJ-hs - Transient Thermal
Impedance (K/W)
4500
Peak Half Sine Wave
On-State Current (A)
1
Pulse Train Duration (s)
Fig. 5 - On-State Power Loss Characteristics
1200
0.1
0.1
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST203C..C Series
2000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
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VS-ST203C Series
Vishay Semiconductors
250
160
ITM = 500 A
ST203C..C Series
TJ = 125 °C
ITM = 300 A
200
ITM = 200 A
150
100
ITM = 100 A
50
ITM = 50 A
Irr - Maximum Reverse Recovery
Current (A)
Qrr - Maximum Reverse Recovery Charge
(µC)
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ITM = 300 A
120
ITM = 200 A
100
ITM = 100 A
ITM = 50 A
80
60
40
ST203C..C Series
TJ = 125 °C
20
0
0
0
20
40
60
80
100
0
dI/dt - Rate of Fall of On-State Current (A/µs)
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100
1000
500
200
400
1500
1000
50 Hz
2500
3000
5000
tp
10 000
ST203C..C Series
Sinusoidal pulse
TC = 40 °C
Peak On-State Current (A)
10 000
Peak On-State Current (A)
ITM = 500 A
140
400
500
1500
1000
2500
3000
5000
10 000
100
10
100
1000
50 Hz
200 100
1000
tp
100
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
10 000
10
100
Pulse Basewidth (µs)
ST203C..C Series
Sinusoidal pulse
TC = 55 °C
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
50 Hz
400
200
1000
1000
2500
1500
100
500
3000
5000
100
10 000
tp
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
10
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
500
2500
50 Hz
100
1000
1000
200
1500
3000
5000
100
10 000
tp
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
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10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
1000
2500
50 Hz
100
400
Peak On-State Current (A)
Peak On-State Current (A)
10 000
200
500
1500
3000
5000
100
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
10 000
tp
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
50 Hz
400
1000
100
200
500
1500
2500
3000
5000
100
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
10 000
tp
10
10
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
1
1000
0.3
0.2
4
2
10
0.5
0.1
100
ST203C..C Series
Sinusoidal pulse
tp
ST203C..C Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
10
1000
3
0.5
1
0.3
5
2
0.2
100
0.1
tp
10
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
10
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
(a)
(b)
TJ = 40 °C
1
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
Device: ST203C..C Series
0.1
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
ST
20
3
C
12
C
H
H
1
-
1
2
3
4
5
6
7
8
9
10
11
1
-
Vishay Semiconductors product
2
-
Thyristor
3
-
Essential part number
4
-
3 = Fast turn-off
5
-
C = Ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
C = PUK case TO-200AB (A-PUK)
8
-
Reapplied dV/dt code (for tq test condition)
9
-
tq code
10
-
0 = Eyelet terminals
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
CK DK EK
20
tq (µs) 25
CJ DJ EJ FJ*
CH DH EH FH HH
30
(gate and auxiliary cathode unsoldered leads) * Standard part number.
All other types available only on request.
1 = Fast-on terminals
(gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = Fast-on terminals
(gate and auxiliary cathode soldered leads)
11
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
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Outline Dimensions
Vishay Semiconductors
TO-200AB (A-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° ± 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074
Revision: 01-Aug-07
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000