AOC2421

AOC2421
8V P-Channel MOSFET
General Description
Product Summary
The AOC2421 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.2V while retaining a 5V
VGS(MAX) rating.
VDS
ID (at VGS=-2.5V)
-8V
-2.5A
RDS(ON) (at VGS=-2.5V)
< 60mΩ
RDS(ON) (at VGS=-1.8V)
< 72mΩ
RDS(ON) (at VGS=-1.5V)
< 85mΩ
RDS(ON) (at VGS=-1.2V)
< 115mΩ
Typical ESD protection
AlphaDFN 0.97x0.97A_4
Top View
HBM Class 2
D
Bottom View
Top View
Bottom View
3
2
S
S
D
G
G
Pin1(G)
4
1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
TA=25°C
Source Current (Pulse) Note2
TA=25°C
Power Dissipation Note1
Junction and Storage Temperature Range
VGS
ID
Rev.1.0 : December 2013
±5
V
A
-25
TJ, TSTG
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Units
V
-2.5
IDM
PD
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Maximum Junction-to-Ambient A D Steady-State
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Maximum
-8
Typ
110
160
0.6
W
-55 to 150
°C
Max
140
200
Units
°C/W
°C/W
Page 1 of 6
AOC2421
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±5V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
TJ=55°C
TJ=125°C
VGS=-1.8V, ID=-1A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Gate resistance
VGS=0V, VDS=-4V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
62
79
57
72
mΩ
mΩ
mΩ
12
-0.6
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
IF=-1.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs
mΩ
S
-1
V
752
pF
178
pF
104
pF
1.6
ΚΩ
7.5
VGS=-4.5V, VDS=-4V, ID=-1.5A
Qgs
Qrr
50
63.5
85
VDS=-5V, ID=-1.5A
Reverse Transfer Capacitance
V
115
IS=-1A,VGS=0V
Rg
µA
65
Diode Forward Voltage
Crss
±10
83
Forward Transconductance
µA
-0.7
VGS=-1.2V, ID=-1A
gFS
Output Capacitance
-0.45
VGS=-1.5V, ID=-1A
VSD
Coss
-5
-0.2
Units
V
-1
VGS=-2.5V, ID=-1.5A
Static Drain-Source On-Resistance
Max
-8
VDS=-8V, VGS=0V
IDSS
RDS(ON)
Typ
13
nC
1.5
nC
Gate Drain Charge
1.0
nC
Turn-On DelayTime
285
ns
VGS=-2.5V, VDS=-4V, RL=2.67Ω,
RGEN=3Ω
465
ns
1870
ns
1900
ns
12
ns
nC
4
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 : December 2013
www.aosmd.com
Page 2 of 6
AOC2421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
25
-4.5V
VDS=-5V
-2.0V
20
20
-2.5V
-1.5V
15
-ID(A)
-ID (A)
15
10
5
10
5
VGS=-1.0V
125°C
25°C
0
0
0
1
2
3
4
0
5
0.5
140
1.5
2
2.5
Normalized On-Resistance
1.4
120
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-1.2V
100
80
VGS=-1.5V
60
40
VGS=-2.5V
VGS=-1.8V
VGS=-2.5V
ID=-1.5A
VGS=-1.8V
ID=-1A
1.2
VGS=-1.5V
ID=-1A
1
VGS=-1.2V
ID=-1A
0.8
20
0
1
0
2
3
4
5
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
110
1.0E+01
ID=-1.5A
100
1.0E+00
90
70
125°C
60
-IS (A)
RDS(ON) (mΩ
Ω)
125°C
1.0E-01
80
1.0E-02
1.0E-03
50
40
25°C
30
25°C
1.0E-04
1.0E-05
20
0
1
2
3
4
5
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0 : December 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOC2421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=-4V
ID=-1.5A
1000
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
800
600
400
1
Coss
200
Crss
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
4
6
-VDS (Volts)
Figure 8: Capacitance Characteristics
8
50
100.0
10µs
100µs
RDS(ON)
limited
1ms
1.0
10ms
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
40
Power (W)
10.0
-ID (Amps)
2
30
20
10
0
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area
Figure 10: Single Pulse Power Rating Junction-toAmbient
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=200°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.1.0 : December 2013
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Page 4 of 6
AOC2421
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev.1.0 : December 2013
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 6