AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V) -8V -3.5A RDS(ON) (at VGS=-2.5V) < 28mΩ RDS(ON) (at VGS=-1.8V) < 32mΩ RDS(ON) (at VGS=-1.5V) < 37mΩ RDS(ON) (at VGS=-1.2V) < 47mΩ Typical ESD protection MCSP 1.57x1.57_4 Top View HBM Class 3A D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev 0 : Dec. 2012 ±5 V A -50 TJ, TSTG www.aosmd.com Units V -3.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Maximum -8 Typ 140 190 0.55 W -55 to 150 °C Max 170 230 Units °C/W °C/W Page 1 of 5 AOC2413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±5V Gate Threshold Voltage VDS=VGS ID=-250µA VGS=-2.5V, ID=-1.5A VGS=-1.8V, ID=-1A 25 32 mΩ VGS=-1.5V, ID=-1A 28 37 mΩ VGS=-1.2V, ID=-1A 34 47 mΩ 14 VSD Diode Forward Voltage IS=-1A,VGS=0V DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Rg Gate resistance V 28 VDS=-5V, ID=-1.5A Crss µA 37 Forward Transconductance Output Capacitance ±10 -0.65 22.5 gFS Coss -0.42 µA 29.5 TJ=125°C Static Drain-Source On-Resistance -5 -0.15 Units V -1 TJ=55°C VGS(th) Max -8 VDS=-8V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-4V, f=1MHz -0.52 mΩ S -1 V 1935 pF 475 pF 240 pF VGS=0V, VDS=0V, f=1MHz 1.7 KΩ VGS=-4.5V, VDS=-4V, ID=-1.5A 7.5 nC SWITCHING PARAMETERS Qg Total Gate Charge 19 27 nC Qgs Gate Source Charge Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 1.6 µs tr Turn-On Rise Time 2.8 µs tD(off) Turn-Off DelayTime 2.7 µs tf Turn-Off Fall Time 6.2 µs trr Body Diode Reverse Recovery Time IF=-1.5A, dI/dt=100A/µs 17 Qrr Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs 9 ns nC VGS=-2.5V, VDS=-4V, RL=2.67Ω, RGEN=3Ω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Dec. 2012 www.aosmd.com Page 2 of 5 AOC2413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -4.5V 50 -2.5V VDS=-5V 40 40 30 30 -ID(A) -ID (A) -2.0V -1.5V 20 10 20 10 VGS=-1.0V 125°C 25°C 0 0 0 1 2 3 4 0 5 50 1 1.5 2 2.5 3 VGS=-1.2V VGS=-1.5V 30 20 VGS=-2.5V VGS=-1.8V Normalized On-Resistance 1.6 40 RDS(ON) (mΩ Ω) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-2.5V ID=-1.5A 1.4 VGS=-1.8V ID=-1A 1.2 VGS=-1.5V ID=-1A 1 VGS=-1.2V ID=-1A 0.8 10 0 1 0 2 3 4 5 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 60 1.0E+01 ID=-1.5A 125°C 1.0E+00 50 125°C -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 40 1.0E-02 30 1.0E-03 20 25°C 25°C 1.0E-04 1.0E-05 10 0 2 3 4 5 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Dec. 2012 1 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOC2413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 3000 VDS=-4V ID=-1.5A 2500 4 Capacitance (pF) -VGS (Volts) Ciss 3 2 2000 1500 1000 1 500 0 Crss 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 25 0 2 4 6 -VDS (Volts) Figure 8: Capacitance Characteristics 8 50 100.0 10µs 100µs RDS(ON) limited 1ms 10ms 1.0 TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 40 Power (W) 10.0 -ID (Amps) Coss 10s DC 30 20 10 0 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 9: Maximum Forward Biased Safe Operating Area Figure 10: Single Pulse Power Rating Junction-toAmbient Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=230°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 0: Dec. 2012 www.aosmd.com Page 4 of 5 AOC2413 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Dec. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5