AON2411

AON2411
12V P-Channel MOSFET
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 1.8V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
ID (at VGS=-4.5V)
-12V
-20A
RDS(ON) (at VGS=-4.5V)
< 8mΩ
RDS(ON) (at VGS=-3.0V)
< 10.2mΩ
RDS(ON) (at VGS=-2.5V)
< 11.6mΩ
RDS(ON) (at VGS=-1.8V)
< 17.5mΩ
Typical ESD protection
HBM Class 2
Application
• Battery path load switch
• System load switch
DFN 2x2C
Top View
Bottom View
D
D
G
S
G
Pin 1
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON2411
DFN 2x2C
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev.1.0: December 2013
Steady-State
A
5.0
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
V
-80
PD
TA=70°C
±8
-15.5
IDM
TA=25°C
Power Dissipation B
Units
V
-20
ID
TA=70°C
Maximum
-12
RθJA
-55 to 150
Typ
20
45
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°C
Max
25
55
Units
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-12
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
TJ=55°C
±10
µA
-0.6
-0.9
V
6.6
8.0
8.6
10.4
VGS=-3.0V, ID=-11A
8.1
10.2
mΩ
VGS=-2.5V, ID=-10A
9.2
11.6
mΩ
17.5
mΩ
-1
V
-7
A
VGS=-1.8V, ID=-8A
13.7
gFS
Forward Transconductance
VDS=-5V, ID=-12A
60
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-6V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
µA
-5
-0.3
TJ=125°C
Coss
Units
-1
VGS=-4.5V, ID=-12A
Static Drain-Source On-Resistance
Max
V
VDS=-12V, VGS=0V
IDSS
RDS(ON)
Typ
-0.59
VGS=-4.5V, VDS=-6V, RL=0.5Ω,
RGEN=3Ω
S
2180
pF
675
pF
425
pF
13.5
Ω
20
VGS=-4.5V, VDS=-6V, ID=-12A
mΩ
30
nC
4
nC
5.5
nC
15
ns
45
ns
135
ns
185
ns
IF=-12A, dI/dt=100A/µs
28
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
13
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2013
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-4.5V
-2.5V
-2.0V
-3.0V
60
-ID(A)
60
-ID (A)
VDS=-5V
40
40
-1.5V
125°C
20
20
25°C
VGS=-1.0V
0
0
0
1
2
3
4
0
5
0.5
20
1.5
2
2.5
3
1.6
Normalized On-Resistance
VGS=-1.8V
15
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=-2.5V
10
5
VGS=-4.5V
VGS=-3.0V
VGS=-4.5V
ID=-12A
1.4
VGS=-3.0V
ID=-11A
1.2
VGS=-2.5V
ID=-10A
1
VGS=-1.8V
ID=-8A
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
20
1.0E+01
ID=-12A
1.0E+00
125°C
1.0E-01
-IS (A)
RDS(ON) (mΩ
Ω)
15
125°C
10
1.0E-02
1.0E-03
5
25°C
25°C
1.0E-04
0
1.0E-05
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2013
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
3500
VDS=-6V
ID=-12A
3000
Capacitance (pF)
-VGS (Volts)
4
3
2
2500
Ciss
2000
1500
Coss
1000
1
500
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
2
4
6
8
10
12
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
1000.0
TJ(Max)=150°C
TA=25°C
10µs
10µs
100.0
100µs
RDS(ON)
limited
10.0
Power (W)
-ID (Amps)
Crss
1ms
10ms
1.0
100
10
TJ(Max)=150°C
TA=25°C
0.1
DC
1
0.0
0.01
0.1
1
-VDS (Volts)
10
0.0001 0.001 0.01
100
VGS> or equal to 1.8V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2013
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: December 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5