AO4292 100V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS MV) technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 100V 8A RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS=4.5V) < 33mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D Bottom View D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4292 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Avalanche energy L=0.1mH VDS Spike 10µs TA=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: January 2014 Steady-State Steady-State A IAS 15 A EAS 11 mJ VSPIKE 120 V 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s V 32 PD TA=70°C ±20 6.2 IDM Avalanche Current C Units V 8 ID TA=70°C C Maximum 100 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.6 ±100 nA 2.15 2.7 V 18 23 32.5 42 33 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A 24 gFS Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) µA 5 VGS=10V, ID=8A Coss Units V VDS=100V, VGS=0V IDSS Max 0.5 mΩ mΩ S 1 V 4 A 1190 pF 95 pF 7 pF 1.1 Ω 1.7 16.5 25 nC 7 12 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 4.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=8A VGS=10V, VDS=50V, RL=6.25Ω, RGEN=3Ω 3 ns 20 ns 3 ns IF=8A, dI/dt=500A/µs 20 Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 90 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2014 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 40 4.5V VDS=5V 4V 30 3.5V ID(A) ID (A) 30 20 20 125°C 10 10 25°C VGS=3V 0 0 0 1 2 3 4 1 5 2 30 4 5 Normalized On-Resistance 2.2 VGS=4.5V 25 RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 VGS=10V 15 2 VGS=10V ID=8A 1.8 1.6 1.4 VGS=4.5V ID=6A 1.2 1 0.8 10 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 60 1.0E+01 ID=8A 1.0E+00 1.0E-01 125°C 40 IS (A) RDS(ON) (mΩ Ω) 50 1.0E-02 125°C 30 1.0E-03 25°C 20 1.0E-04 25°C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=50V ID=8A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 Coss 400 2 200 0 Crss 0 0 4 8 12 16 20 0 20 Qg (nC) Figure 7: Gate-Charge Characteristics 60 80 100 1000 100.0 TJ(Max)=150°C TA=25°C 10µs 10µs RDS(ON) limited 100µs Power (W) 10.0 ID (Amps) 40 VDS (Volts) Figure 8: Capacitance Characteristics 1ms 1.0 10ms 100 10 0.1 TJ(Max)=150°C TA=25°C DC 1 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2014 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: January 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5