SHENZHENFREESCALE AO4616

AO4616
30V Complementary MOSFET
General Description
The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
Features
N-Channel
VDS= 30V
P-Channel
-30V
ID= 8A (VGS=10V)
-7A (VGS=-10V)
RDS(ON)
RDS(ON)
< 20mΩ (VGS=10V)
< 22mΩ (VGS=-10V)
< 28mΩ (VGS=4.5V)
< 40mΩ (VGS=-4.5V)
SOIC-8
D2
D1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S1
S2
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
VDS
Drain-Source Voltage
30
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
ID
TA=70°C
p-channel
Max p-channel
-30
Units
V
±20
±20
V
8
-7
A
6.5
-6
IDM
40
-40
Avalanche Current C
IAS, IAR
19
27
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
18
36
mJ
Pulsed Drain Current
Power Dissipation B
C
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
2
1.3
TJ, TSTG
Symbol
t ≤ 10s
2
1.3
RθJA
RθJL
-55 to 150
Typ
48
74
32
W
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
AO4616
30V Complementary MOSFET
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
TJ=55°C
5
VGS=10V, ID=8A
TJ=125°C
VGS=4.5V, ID=6A
10
µA
2.4
V
16.5
20
23
28
19.5
28
A
gFS
Forward Transconductance
VDS=5V, ID=8A
30
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
1.8
VSD
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
2.5
A
600
740
888
pF
VGS=0V, VDS=15V, f=1MHz
77
110
145
pF
50
82
115
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
VGS=10V, VDS=15V, ID=8A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
2.5
nC
3
nC
5
ns
3.5
ns
19
ns
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
AO4616
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
VDS=5V
4V
25
25
3.5V
10V
20
3V
ID(A)
ID (A)
20
15
15
10
10
125°C
5
5
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
Normalized On-Resistance
30
25
RDS(ON) (mΩ )
2
VGS=4.5V
20
15
VGS=10V
10
VGS=4.5V
ID=6A
1.4
1.2
VGS=10V
ID=8A
1
17
5
2
10
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
40
ID=8A
1.0E+01
35
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ )
30
25
25°C
1.0E-01
125°C
1.0E-02
25°C
20
1.0E-03
15
1.0E-04
10
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
AO4616
30V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
800
600
400
Coss
2
200
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
100.0
Crss
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
10s
DC
0.0
0.01
Power (W)
ID (Amps)
10.0
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
AO4616
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
AO4616
30V Complementary MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
ID(ON)
On state drain current
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7A
RDS(ON)
-1.4
gFS
Forward Transconductance
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
100
nA
-2.0
-2.5
V
17.5
22
24.5
33
27.5
40
-40
VGS=-4.5V, ID=-3.5A
VDS=-5V, ID=-7A
IS=-1A,VGS=0V
Units
V
-5
TJ=125°C
Static Drain-Source On-Resistance
Max
-1
TJ=55°C
VSD
Coss
Typ
A
24
-0.75
mΩ
mΩ
S
-1
V
-2.5
A
830
1040
1250
pF
125
180
235
pF
75
125
175
pF
2
4
6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15
19
23
nC
Qg(4.5V) Total Gate Charge
7.5
9.6
12
nC
VGS=10V, VDS=-15V, ID=-7A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=-7A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
3.6
nC
4.6
nC
10
ns
VGS=10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
5.5
ns
26
ns
IF=-7A, dI/dt=500A/µs
11.5
15
25
32.5
9
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
AO4616
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
60
-10V
VDS=-5V
-7V
-5V
50
30
40
-ID(A)
-ID (A)
-4.5V
30
20
125°C
20
-3.5V
10
25°C
10
VGS=-3V
0
0
0
1
2
3
4
0
5
1
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
Normalized On-Resistance
1.6
35
RDS(ON) (mΩ )
2
VGS=-4.5V
30
25
VGS=-10V
20
15
10
VGS=-10V
ID=-7A
1.4
17
5
2
VGS=-4.5V
10
I =-3.5A
1.2
1
D
0.8
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
60
25
50
1.0E+02
ID=-7A
1.0E+01
50
40
125°C
40
-IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
30
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
20
1.0E-04
10
1.0E-05
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
AO4616
30V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=-15V
ID=-7A
1400
1200
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
800
600
Coss
400
2
200
Crss
0
0
0
5
15
Qg 10
(nC)
Figure 7: Gate-Charge Characteristics
0
20
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
10s
DC
0.0
0.01
Power (W)
-ID (Amps)
10.0
10
100
1
0.00001
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
AO4616
30V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds