AO4616 30V Complementary MOSFET General Description The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. Features N-Channel VDS= 30V P-Channel -30V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON) < 20mΩ (VGS=10V) < 22mΩ (VGS=-10V) < 28mΩ (VGS=4.5V) < 40mΩ (VGS=-4.5V) SOIC-8 D2 D1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 S1 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current ID TA=70°C p-channel Max p-channel -30 Units V ±20 ±20 V 8 -7 A 6.5 -6 IDM 40 -40 Avalanche Current C IAS, IAR 19 27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 18 36 mJ Pulsed Drain Current Power Dissipation B C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Steady-State Steady-State 2 1.3 TJ, TSTG Symbol t ≤ 10s 2 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 W °C Max 62.5 90 40 Units °C/W °C/W °C/W AO4616 30V Complementary MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C 5 VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A 10 µA 2.4 V 16.5 20 23 28 19.5 28 A gFS Forward Transconductance VDS=5V, ID=8A 30 Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.8 VSD DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 2.5 A 600 740 888 pF VGS=0V, VDS=15V, f=1MHz 77 110 145 pF 50 82 115 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC VGS=10V, VDS=15V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.5 nC 3 nC 5 ns 3.5 ns 19 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. AO4616 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 VDS=5V 4V 25 25 3.5V 10V 20 3V ID(A) ID (A) 20 15 15 10 10 125°C 5 5 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance 30 25 RDS(ON) (mΩ ) 2 VGS=4.5V 20 15 VGS=10V 10 VGS=4.5V ID=6A 1.4 1.2 VGS=10V ID=8A 1 17 5 2 10 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 40 ID=8A 1.0E+01 35 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 30 25 25°C 1.0E-01 125°C 1.0E-02 25°C 20 1.0E-03 15 1.0E-04 10 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) AO4616 30V Complementary MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 200 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 100.0 Crss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 0.1 1 10 10s DC 0.0 0.01 Power (W) ID (Amps) 10.0 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 AO4616 30V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds AO4616 30V Complementary MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-7A RDS(ON) -1.4 gFS Forward Transconductance Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 100 nA -2.0 -2.5 V 17.5 22 24.5 33 27.5 40 -40 VGS=-4.5V, ID=-3.5A VDS=-5V, ID=-7A IS=-1A,VGS=0V Units V -5 TJ=125°C Static Drain-Source On-Resistance Max -1 TJ=55°C VSD Coss Typ A 24 -0.75 mΩ mΩ S -1 V -2.5 A 830 1040 1250 pF 125 180 235 pF 75 125 175 pF 2 4 6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15 19 23 nC Qg(4.5V) Total Gate Charge 7.5 9.6 12 nC VGS=10V, VDS=-15V, ID=-7A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=-7A, dI/dt=500A/µs Body Diode Reverse Recovery Time 3.6 nC 4.6 nC 10 ns VGS=10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω 5.5 ns 26 ns IF=-7A, dI/dt=500A/µs 11.5 15 25 32.5 9 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. AO4616 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 60 -10V VDS=-5V -7V -5V 50 30 40 -ID(A) -ID (A) -4.5V 30 20 125°C 20 -3.5V 10 25°C 10 VGS=-3V 0 0 0 1 2 3 4 0 5 1 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 Normalized On-Resistance 1.6 35 RDS(ON) (mΩ ) 2 VGS=-4.5V 30 25 VGS=-10V 20 15 10 VGS=-10V ID=-7A 1.4 17 5 2 VGS=-4.5V 10 I =-3.5A 1.2 1 D 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 60 25 50 1.0E+02 ID=-7A 1.0E+01 50 40 125°C 40 -IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 30 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 20 1.0E-04 10 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) AO4616 30V Complementary MOSFET P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=-15V ID=-7A 1400 1200 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 800 600 Coss 400 2 200 Crss 0 0 0 5 15 Qg 10 (nC) Figure 7: Gate-Charge Characteristics 0 20 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 0.1 1 10 10s DC 0.0 0.01 Power (W) -ID (Amps) 10.0 10 100 1 0.00001 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 AO4616 30V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds