Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier ¥ General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J212 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) –4 Drain Saturation Current (Pulsed) IDSS Typ – 25 V 10 mA 360 mW 3.27 mW/°C Process NJ26L Max – 25 Unit Test Conditions V IG = – 1 µA, VDS = ØV pA VGS = – 15V, VDS = ØV pA VDS = 20V, ID = 1 mA –6 V VDS = 15V, ID = 1 nA 15 40 mA VDS = 15V, VGS = Ø V 7000 12000 µS VDS = 15V, VGS = Ø V f = 1 kHz 200 µS VDS = 15V, VGS = Ø V f = 1 kHz – 100 – 10 Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos Common Source Input Capacitance Ciss 4 pF VDS = 15V, VGS = Ø V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 pF VDS = 15V, VGS = Ø V f = 1 MHz Equivalent Short Circuit Input Noise Voltage ēN 10 nV/√Hz VDS = 15V, VGS = Ø V f = 1 kHz TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ212 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375