Databook.fxp 1/13/99 2:09 PM Page B-12 B-12 01/99 2N4340, 2N4341 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Small Signal Amplifiers ¥ Current Regulators ¥ Voltage-Controlled Resistors At 25°C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C) 2N4340 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS – 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) –1 –3 Drain Saturation Current (Pulsed) IDSS 1.2 3.6 Drain Cutoff Current ID(OFF) 0.05 (– 5) Drain Source ON Resistance rds(on) 1500 Common Source Forward Transconductance gfs Common Source Output Conductance gos 30 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4341 Min Max – 50 V 50 mA 300 mW 2mW/°C Process NJ16 Unit – 50 Test Conditions V IG = – 1 µA, VDS = ØV – 100 – 100 pA VGS = – 30V, VDS = ØV – 100 – 100 nA VGS = – 30V, VDS = ØV –2 –6 V VDS = 15V, ID = 0.1 µA 3 9 mA VDS = 15V, VGS = ØV 0.07 nA (– 10) V VDS = 15V, VGS = ( ) TA = 150°C Dynamic Electrical Characteristics 800 Ω VGS = ØV, ID = Ø A f = 1 kHz 1300 3000 2000 4000 µS VDS = 15V, VGS = ØV f = 1 kHz 60 µS VDS = 15V, VGS = ØV f = 1 kHz 7 7 pF VDS = 15V, VGS = ØV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = ØV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = ØV RG = 1 MΩ, BW = 200 Hz f = 1 kHz TOÐ18 Package Surface Mount Dimensions in Inches (mm) SMP4340, SMP4341 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com