Databook.fxp 1/13/99 2:09 PM Page B-69 B-69 01/99 U350 Hybrid Quad Silicon Junction Field-Effect Transistor Array ¥ Analog Multiplier ¥ VHF Double-Balanced Mixer Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: U350 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ Four Matched Process NJ72L Max – 25 –2 24 – 25 V 25 mA 400 mW 3.2 mW/°C Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 nA VGS = – 15V, VDS = ØV –1 µA VGS = – 15V, VDS = ØV –6 V VDS = 10V, ID = 1 nA 1 V VDS = ØV, IG = 1 mA 60 mA VDS = 15V, VGS = ØV 90 Ω VGS = ØV, ID = mA f = 1 kHz 18 mS VDS = 10V, ID = 10 mA f = 1 kHz TA = 125°C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 50 Common Source Forward Transconductance gfs Common Source Output Conductance gos 150 µS VDS = 10V, ID = 10 mA f = 1 kHz Drain Gate Capacitance Cdgo 2.5 pF VGD = – 10V, IS = ØV f = 1 MHz Gate Source Capacitance Csgo 5 pF VGS = – 10V, ID = ØV f = 1 MHz (Conversion Gain) Gc 4 dB VDS = 20V, VGS = 1/2 VGS(OFF) RD = 1,700 Ω f = 100 MHz Noise Figure NF 7 dB VDS = 20V, VGS = 1/2 VGS(OFF) RD = 1,700 Ω f = 100 MHz Saturation Drain Current Ratio IDSS / IDSS 0.9 1 VDS = 15V, VDS = ØV Gate Source Cutoff Voltage Ratio VGS(OFF) / VGS(OFF) 0.9 1 VDS = 15V, ID = 1 nA Common Source Forward Transconductance gfs / gfs 0.9 1 VDS = 15V, ID = 10 mA f = 1 kHz Differential Output Conductance Yos / Yos 0.9 1 VDS = 15V, ID = 10 mA f = 1 kHz 10 TOÐ78 Package Pin Configuration Dimensions in Inches (mm) 1 Gate 1 & 3, 2 Drain 1 & 4, 3 Source 1 & 2, 4 Ground & Case, 5 Source 3 & 4, 6 Drain 2 & 3, 7 Gate 2 & 4, 8 Omitted www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375