Databook.fxp 1/13/99 2:09 PM Page B-59 B-59 01/99 J232 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J232 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Typ – 40 V 50 mA 360 mW 3.27 mW/°C Process NJ16 Max – 40 – 250 –2 Unit Test Conditions V IG = – 1 µA, VDS = ØV pA VGS = – 30V, VDS = ØV pA VDS = 20V, ID = ØV –3 –6 V VDS = 20V, ID = 1 µA 5 10 mA VDS = 20V, VGS = Ø V 2500 5000 µS VDS = 20V, VGS = Ø V f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 µS VDS = 20V, VGS = Ø V f = 1 kHz Common Source Input Capacitance Ciss 4 pF VDS = 20V, VGS = Ø V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 pF VDS = 20V, VGS = Ø V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N nV/√Hz VDS = 10V, VGS = Ø V f = 10 Hz nV/√Hz VDS = 10V, VGS = Ø V f = 1 kHz TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ232 20 6 30 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375