INTERFET J232

Databook.fxp 1/13/99 2:09 PM Page B-59
B-59
01/99
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
¥ Audio Amplifier
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
At 25°C free air temperature:
J232
Static Electrical Characteristics
Min
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Operating Current
IG
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current (Pulsed)
IDSS
Typ
– 40 V
50 mA
360 mW
3.27 mW/°C
Process NJ16
Max
– 40
– 250
–2
Unit
Test Conditions
V
IG = – 1 µA, VDS = ØV
pA
VGS = – 30V, VDS = ØV
pA
VDS = 20V, ID = ØV
–3
–6
V
VDS = 20V, ID = 1 µA
5
10
mA
VDS = 20V, VGS = Ø V
2500
5000
µS
VDS = 20V, VGS = Ø V
f = 1 kHz
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
Common Source Output Conductance
gos
5
µS
VDS = 20V, VGS = Ø V
f = 1 kHz
Common Source Input Capacitance
Ciss
4
pF
VDS = 20V, VGS = Ø V
f = 1 MHz
Common Source Reverse Transfer
Capacitance
Crss
1
pF
VDS = 20V, VGS = Ø V
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
e¯ N
nV/√Hz
VDS = 10V, VGS = Ø V
f = 10 Hz
nV/√Hz
VDS = 10V, VGS = Ø V
f = 1 kHz
TOÐ226AA Package
Surface Mount
Dimensions in Inches (mm)
SMPJ232
20
6
30
Pin Configuration
1 Drain, 2 Source, 3 Gate
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1000 N. Shiloh Road, Garland, TX 75042
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