Databook.fxp 1/14/99 12:00 PM Page B-17 B-17 01/99 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range 2N4867 2N4867A At 25°C free air temperature: Static Electrical Characteristics Min Max – 40 2N4868 2N4868A Min Max – 40 2N4869 2N4869A Min Max – 40 – 40 V 50 mA 300mW 1.7 mW/°C – 65°C to + 200°C Process NJ16 Unit V Test Conditions Gate Source Breakdown Voltage V(BR)GSS IG = – 1µA, VDS = ØV Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) – 0.7 –2 –1 –3 – 1.8 –5 V VDS = 20V, ID = 1 µA Drain Saturation Current (Pulsed) IDSS 0.4 1.2 1 3 2.5 7.5 mA VDS = 20V, VGS = ØV Common Source Forward Transconductance gfs 700 2000 1000 3000 1300 4000 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Output Conductance gos 1.5 4 10 µS VDS = 20V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 25 25 25 pF VDS = 20V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 5 5 pF VDS = 20V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N Noise Figure NF – 0.25 – 0.25 – 0.25 nA VGS = – 30V, VDS = ØV – 0.25 – 0.25 – 0.25 µA VGS = – 30V, VDS = ØV TA = 150°C Dynamic Electrical Characteristics 20 20 20 nV/√HZ VDS = 10V, VGS = ØV f = 10 Hz 10 10 10 nV/√HZ VDS = 10V, VGS = ØV f = 1 kHz VDS = 10V, VGS = ØV f = 1 kHz 1 1 1 dB TOÐ72 Package Surface Mount Dimensions in Inches (mm) SMP4867, SMP4867A, SMP4868, SMP4868A, SMP4869, SMP4869A Pin Configuration (2N4867, 68, 69) RG = 20 kΩ (2N4867A, 68A, 69A) RG = 5 kΩ 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375