Databook.fxp 1/14/99 12:22 PM Page B-43 B-43 01/99 IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN860 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Leakage Voltage IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Differential Gate Source Voltage |VGS1– VGS2| Typ Process NJ450L Max – 20 – 0.3 – 20 V 50 mA 400 mW 2.3 mW/°C – 65°C to 200°C Unit Test Conditions V IG = – 1 µA, VDS = ØV 3 nA VGS = – 10V, VDS = ØV –3 V VDS = 10V, ID = 100 µA 10 25 mA VDS = 10V, VGS = Ø V mV VDS = 10V, ID = 100 µA mS VDS = 10V, ID = – 10 mA f = 1 kHz Dynamic Electrical Characteristics Transconductance gm 25 40 Common Source Input Capacitance Ciss 30 35 pF VDS = 10V, ID = – 10 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 17 20 pF VDS = 10V, ID = – 10 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 2 nV/√Hz VDG = 3V, ID = 10 mA f = 1 kHz TOÐ71 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375