Databook.fxp 1/13/99 2:09 PM Page D-5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN146 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Typ Process NJ450 Max – 40 – 0.3 – 40 V 10 mA 375 mW 3 mW/°C – 65°C to 200°C Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 nA VGS = – 30V, VDS = ØV –1 µA VGS = – 30V, VDS = ØV – 1.2 V VDS = 10V, ID = 1 µA 30 mA VDS = 10V, VGS = ØV mS VDS = 10V, VGS = ØV IDSS = 5 mA f = 1 kHz TA = 150°C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 75 pF VDS = 10V, VGS = ØV f = 1 kHz Common Source Reverse Transfer Capacitance Crss 15 pF VDS = 10V, ID = ØA f = 1 kHz Noise Figure NF dB VDS = 10V, ID = 5 mA RG = 100Ω f = 1 kHz Differential Gate Source Voltage |VGS1 – VGS2| mV VDS = 10V, ID = 5 mA 30 TOÐ71 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate, 3 Drain, 5 Source, 6 Gate, 7 Drain www.interfet.com 40 1 20 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375