Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Drain Source Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: 2N5397 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS – 25 Gate Source Forward Voltage VGS(F) Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) –1 –6 Drain Saturation Current (Pulsed) IDSS 10 Common Source Forward Transconductance gfs Common Source Forward Transfer Admittance | Yfs | Common Source Output Conductance | gos | Common Source Input Admittance | Yos | Common Source Input Conductance 2N5398 Min Max – 25 V 25 V 10 mA 300 mW 1.7 mW/°C Process NJ26L Unit – 25 Test Conditions V IG = – 1 µA, VDS = ØV 1 1 V IG = 1 mA, VDS = ØV – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV – 0.1 – 0.1 µA VGS = – 15V, VDS = ØV –1 –6 V VDS = 10V, ID = 1 nA 30 5 40 mA VDS = 10V, VGS = ØV 5.5 9 5 10 mS VDG = 10V, ID = 10 mA f = 450 MHz 6 10 5.5 10 mS VDS = 10V, ID = 10 mA f = 1 kHz 0.4 0.5 mS VDG = 10V, ID = 10 mA f = 450 MHz 0.2 0.4 mS VDS = 10V, ID = 10 mA f = 1 kHz gis 2 3 mS VDG = 10V, ID = 10 mA f = 450 MHz Common Source Input Capacitance Ciss 5 5.5 pF VDG = 15V, VGS = ØV f = 1 kHz Common Source Reverse Transfer Capacitance Crss 1.2 1.3 pF VDG = 15V, VGS = ØV f = 1 kHz TA = 150°C Dynamic Electrical Characteristics TOÐ72 Package Surface Mount Dimensions in Inches (mm) SMP5397, SMP5398 Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com