Databook.fxp 1/13/99 2:09 PM Page B-27 B-27 01/99 2N6550 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current Continuous Device Power Dissipation Power Derating Junction Temperature (Operating & Storage) At 25°C free air temperature: 2N6550 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Leakage Current IGSS Zero Gate Voltage Drain Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Typ – 20 V 50 mA 400 mW 2.3 mW/°C – 65°C to +200°C Process NJ450L Max – 20 Unit Test Conditions V IG = 10 µA, VDS = ØV –3 nA VGS = – 10V, VDS = ØV – 0.1 µA VGS = – 10V, VDS = ØV 250 mA VDS = 10V, VGS = Ø V – 0.3 –3 V VDS = 10V, ID = 0.1 mA 25 150 mS VDS = 10V, ID = 10 mA f = 1 kHz 150 µS VDS = 10V, ID = 10 mA f = 1 kHz 10 100 TA = 85°C Dynamic Electrical Characteristics Transconductance gfs Common Source Output Conductance |Yos | Common Source Input Capacitance Ciss 30 35 pF VDS = 10V, ID = 10 mA f = 140 kHz Common Source Reverse Transfer Capacitance Crss 10 20 pF VDS = 10V, VDS = ØV f = 140 kHz 1.4 2 nV/√Hz VDS = 5V, ID = 10 mA f = 1 kHz 6 10 nV/√Hz VDS = 5V, ID = 10 mA f = 10 Hz e¯ N Total 0.4 0.6 µVrms VDS = 5V, ID = 10 mA f = 10 kHz to 20 kHz ¯iN 0.1 pA/√Hz RS < 100 KΩ f = 1 kHz Equivalent Short Circuit Input Noise Voltage Equivalent Open Circuit Input Noise Current e¯ N TOÐ46 Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375