BTA08 S/A BTB08 S/A

BTA08 S/A
BTB08 S/A
SENSITIVE GATE TRIACS
..
.
TO220AB
(Plastic)
FEATURES
VERY LOW IGT = 10mA max
LOW IH = 25mA max
BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTA/BTB08 S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2 t
dI/dt
Tstg
Tj
Tl
Symbol
VDRM
VRRM
2014-6-9
Parameter
Value
Unit
8
A
tp = 8.3 ms
84
A
tp = 10 ms
80
I2 t value
tp = 10 ms
32
A2s
Critical rate of rise of on-state current
Gate supply : IG = 50mA diG/dt = 0.1A/µs
Repetitive
F = 50 Hz
10
A/µs
Non
Repetitive
50
RMS on-state current
(360° conduction angle)
BTA
Tc = 75°C
BTB
Tc = 80°C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110
°C
°C
260
°C
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
BTA / BTB08-
Unit
400 S/A
600 S/A
700 S/A
400
600
700
Repetitive peak off-state voltage
Tj = 110°C
1
V
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BTA08 S/A / BTB08 S/A
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-a)
Value
Unit
60
°C/W
BTA
4.4
°C/W
BTB
3.2
BTA
3.3
BTB
2.4
Junction to ambient
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
°C/W
GATE CHARACTERISTICS (maximum values)
PGM = 10W (tp = 20 µs)
PG (AV) = 1W
IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V
(DC) RL=33Ω
(DC) RL=33Ω
Quadrant
Tj=25°C
Suffix
S
A
Unit
I-II-III
MAX
10
10
mA
IV
MAX
10
25
Tj=25°C
I-II-III-IV
MAX
1.5
V
VGT
VD=12V
VGD
VD=VDRM RL=3.3kΩ
Tj=110°C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 40mA
dIG/dt = 0.5A/µs
Tj=25°C
I-II-III-IV
TYP
2
µs
IL
IG= 1.2 IGT
Tj=25°C
I-III-IV
TYP
II
20
20
40
40
25
25
mA
IH *
IT= 100mA gate open
Tj=25°C
MAX
VTM *
ITM = 11A tp= 380µs
Tj=25°C
MAX
1.75
V
IDRM
IRRM
VDRM
VRRM
Tj=25°C
MAX
0.01
mA
Tj=110°C
MAX
0.75
Linear slope up to VD=67%VDRM
gate open
Tj=110°C
MIN
10
10
V/µs
(dI/dt)c= 3.5A/ms
Tj=110°C
TYP
5
5
V/µs
dV/dt *
(dV/dt)c *
Rated
Rated
mA
* For either polarity of electrode A2 voltage with reference to electrode A1.
2014-6-9
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BTA08 S/A / BTB08 S/A
ORDERING INFORMATION
Package
BTA
(Insulated)
BTB
(Uninsulated)
IT(RMS)
VDRM / VRRM
Sensitivity Specification
A
V
S
A
8
400
X
X
600
X
X
700
X
X
400
X
X
600
X
X
700
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
2014-6-9
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BTA08 S/A / BTB08 S/A
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2 t.
Fig.9 : On-state characteristics (maximum values).
2014-6-9
4
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