Transistors SMD Type NPN Transistors 2SC4422 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=11V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 15 Collector - Emitter Voltage VCEO 11 Emitter - Base Voltage Unit V VEBO 2 Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 400 mW Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 15 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 11 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 2 Typ Max V Collector-base cut-off current ICBO VCB= 12 V , IE= 0 1 Collector-emitter cut-off current ICEO VCE = 10 V, RBE = ∞ 1 Emitter cut-off current IEBO VEB= 1V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.5 Base - emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1.2 DC current gain hFE VCE= 5V, IC= 20mA Power gain PG VCE=5V, IC=20mA,f= 900 MHz Noise figure NF VCE=5V, IC=5mA,f= 900 MHz Collector output capacitance Cob VCB= 5V,IE=0, f=1MHz Transition frequency fT VCE= 5V, IC=20mA 50 uA V 250 9 3 1.6 4.5 Unit dB pF GHz ■ Marking Marking CR www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC4422 Maximum Collector Dissipation Curve Collector Current IC (mA) 600 400 200 120 80 40 Collector Output Capacitance Cob (pF) 2 2 5 10 20 Collector Current IC (mA) 50 4 1.2 0.8 0.4 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) www.kexin.com.cn 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Gain Bandwidth Product vs. Collector Current 8 6 4 2 1 2 5 10 20 Collector Current IC (mA) 50 Power Gain vs. Collector Current 20 IE = 0 f = 1 MHz 1.6 IB = 25 µA VCE = 5 V 0 50 Collector Output Capacitance vs. Collector to Base Voltage 2.0 75 8 Power Gain PG (dB) DC Current Transfer Ratio hFE 160 1 100 12 10 VCE = 5 V 0 125 0 DC Current Transfer Ratio vs. Collector Current 200 150 16 50 100 150 Ambient Temperature Ta (。 C) 0 Typical Output Characteristic 20 Gain Bandwidth Product fT (GHz) Collector Power Dissipation PC (mW) ■ Typical Characterisitics VCE = 0 f = 900 MHz 16 12 8 4 0 1 2 5 10 20 Collector Current IC (mA) 50 Transistors SMD Type NPN Transistors 2SC4422 ■ Typical Characterisitics Noise Figure vs. Collector Current Noise Figure NF (dB) 5 VCE = 5 V f = 900 MHz 4 3 2 1 0 1 2 5 10 20 Collector Current IC (mA) 50 Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50 Ω IC = 5 mA IC = 10 mA S11-Frequency 0.6 0.8 1 S21-Frequency 90ϒ 1.5 120ϒ 2 0.4 3 150ϒ 4 5 0.2 Scale : 10/div 60ϒ 30ϒ 10 0.2 0 0.4 0.6 1 1.5 2 3 45 10 ° –180ϒ 0ϒ –10 –0.2 –5 –4 –3 –0.4 –0.6 –30ϒ –150ϒ –2 –0.8 –1 –1.5 –120ϒ –60ϒ –90ϒ www.kexin.com.cn 3 Transistors SMD Type NPN Transistors 2SC4422 ■ Typical Characterisitics S12-Frequency 90ϒ 120ϒ S22-Frequency Scale : 0.1/div 60ϒ 0.6 0.8 1 1.5 2 0.4 150ϒ 3 30ϒ 4 5 0.2 10 –180ϒ 0ϒ 0.2 0 0.4 0.6 0.81 1.5 2 3 45 10 ° –10 –30ϒ –150ϒ –0.2 –5 –4 –3 –0.4 –120ϒ –60ϒ –90ϒ . 4 www.kexin.com.cn –0.6 –2 –0.8 –1 –1.5