Transistors SMD Type NPN Transistors 2SD882 Features 1.70 0.1 Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current to Continuous IC 3 A W Collector Dissipation Pc 0.5 Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage VEBO IE= 100 uA ,IC=0 6 V Collector cut-off current ICBO VCB=40 V , IE=0 1 uA Collector cut-off current ICEO VCE=30 V , IB=0 10 uA Emitter cut-off current IEBO VEB=6V , IC=0 1 uA DC current gain hFE VCE= 2V, IC= 1A 60 VCE=2V, IC= 100mA 32 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V Transition frequency fT VCE=5 V, IC=0.1mA,f = 10MHz 50 MHz ■ Classification of hfe(1) Type 2SD882-R 2SD882-Q 2SD882-P 2SD882-E Range 60-120 100-200 160-320 200-400 Marking 882R 882Q 882P 882E www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD882 ■ Typical Characterisitics Static Characteristic 2.00 10mA 9mA 8mA 7mA 1.50 6mA 5mA 1.25 4mA 1.00 3mA 0.75 0.25 0 1 2 3 4 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— Ta=25℃ 100 6 7 10 8 IC Ta=25℃ β=10 100 IC 3000 —— 1000 IC 100 VBEsat 2000 Ta=100 ℃ 10 10 COLLECTOR CURRENT 10 1 1 VCE (V) 100 COLLECTOR CURREMT —— 1000 IC IC Ta=25℃ Ta=100 ℃ β=10 1 10 100 COLLECTOR CURREMT (mA) Cob/Cib —— 500 1000 IC VCB/VEB f=1MHz IE=0/IC=0 T= a 25 ℃ 100 CAPACITANCE C (pF) Ta=25 ℃ 10 COMMON EMITTER VCE= 2V 0 300 600 900 1200 BASE-EMMITER VOLTAGE VBE (mV) PC 600 COLLECTOR POWER DISSIPATION PC (mW) 3000 (mA) 1000 1 3000 (mA) 1000 100 3000 VBE T= a 10 0℃ COLLECTOR CURRENT IC (mA) Ta=100℃ COMMON EMITTER VCE= 2V BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 —— Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 2 IC IB=1mA COLLECTOR-EMITTER VOLTAGE 1 —— 2mA 0.50 0.00 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 1.75 hFE 1000 COMMON EMITTER Ta=25 ℃ www.kexin.com.cn 100 Ta 125 (℃) 150 Cib 100 Cob 10 0.1 1 REVERSE VOLTAGE 10 V (V) 20