SMD Type Diodes Transistors NPN Transistors 2SC945 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 ● Complementary to 2SA733 0.55 ● High hFE linearity +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Collector current up to 150mA 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector to base voltage Parameter VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 150 mA Power dissipation PC 200 mW Junction temperature Tj 150 ℃ Tstg -55 to +150 ℃ Storage temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit IC=100 μA, IE=0 60 V(BR)CEO IC=1mA , IB=0 50 V V(BR)EBO IE=100 μA, IC=0 5 V Collector cutoff current ICBO VCB = 60V, IE = 0 Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain hFE VCE = 6.0V, IC =1.0mA 130 VCE = 6.0V, IC =0.1mA 40 V 0.1 μA 0.1 μA 400 Collector saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base saturation voltage VBE(sat) IC=100mA,IB=10mA 1.0 V VCB = 10 V, IE = 0 , f = 1 MHz 3.0 pF Collector to base capacitance Cob Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 4 150 10 dB MHz ■ Classification of hfe(1) Type 2SC945-L 2SC945-H Range 130-200 200-400 Marking CRL CR www.kexin.com.cn 1 Transistors Diodes SMD SMDType Type 2SC945 ■ Typical Characterisitics Static Characteristic (mA) 27uA COLLECTOR CURRENT DC CURRENT GAIN IC 24uA 8 21uA 18uA 6 15uA 12uA 4 IB=3uA 0 2 4 6 8 10 VCEsat —— VCE 10 0.7 12 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ 30 β=10 10 COLLECTOR CURRENT Cob / Cib 15 100 30 IC COLLECTOR POWER DISSIPATION PC (W) CAPACITANCE C (pF) Ta=25℃ 10 Cib 5 Cob 0 0.1 0.3 1 REVERSE BIAS VOLTAGE www.kexin.com.cn 10 3 V (V) IC 600 Ta=100℃ 400 β=10 0.3 1 3 COLLECTOR CURRENT PC 0.25 f=1MHz IE=0 /IC=0 150 Ta=25℃ (mA) VCB / VEB —— 100 (mA) 800 200 0.1 150 IC VBEsat —— 1000 Ta=100℃ 3 30 10 COLLECTOR CURRENT 100 1 VCE=6V 3 1 (V) 300 2 100 30 6uA COLLECTOR-EMITTER VOLTAGE 10 Ta=25℃ 300 9uA 2 0 IC Ta=100℃ COMMON EMITTER Ta=25℃ 30uA 10 hFE —— 1000 hFE 12 —— 10 IC (mA) 100 150 30 Ta 0.20 0.15 0.10 0.05 0.00 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150