Transistors SMD Type NPN Transistors 3DD13003 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 Emitter - Base Voltage VEBO 9 Collector Current - Continuous IC 1.5 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 700 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 400 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 9 Typ Max V Collector-base cut-off current ICBO VCB= 700 V , IE= 0 1 Collector- emitter cut-off current ICEO VCE= 400 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 9V , IC=0 mA 1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=250mA 0.6 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=250mA 1.2 hFE(1) VCE= 5V, IC= 0.5A 10 hFE(2) VCE= 5V, IC= 1.5A 5 DC current gain Unit Fall time tf IC=1A,IB1=-IB2=0.2A ,VCC=100V Storage time ts IC=250mA 2 Transition frequency fT VCE= 10V, IC= 100mA,f=1MHz 5 V 40 0.5 4 uS MHz ■ Classification of hfe(1) Rank A B C D E F Range 10-15 15-20 20-25 25-30 30-35 35-40 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 3DD13003 ■ Typical Characterisitics Static Characteristic 1.00 DC CURRENT GAIN 35mA 30mA 25mA 0.50 20mA 15mA 0.25 IC Ta=100℃ hFE 40mA 0.75 —— COMMON EMITTER VCE= 5V 50mA 45mA IC (A) COMMON EMITTER Ta=25℃ COLLECTOR CURRENT hFE 100 Ta=25℃ 10 10mA IB=5mA 0.00 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 6 1 7 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 Ta=25℃ Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC β=4 —— VBE 1 10 1000 1500 100 PC 0.6 COMMON EMITTER VCE=5V —— IC (mA) Ta 0.5 0.4 10 0.3 T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT ℃ 25 T a= COLLECTOR CURRENT 100 0.2 1 0.1 0.1 0 200 400 600 BASE-EMMITER VOLTAGE VBE (mV) 2 0℃ 10 T a= (mA) IC (mA) 1500 1000 IC 10 (mA) IC 100 1000 1500 100 —— IC COLLECTOR POWER DISSIPATION PC (W) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1000 1000 1500 100 COLLECTOR CURRENT β=4 600 10 VCE (V) www.kexin.com.cn 800 1000 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150