MOSFET SMD Type P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) SOT-23-3 Unit: mm ■ Features ● VDS (V) =-30V 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) 1 D 0.55 ● RDS(ON) ＜ 50mΩ (VGS =-10V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID =-4.2 A (VGS =-10V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 1.1 -0.1 ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) G 0-0.1 +0.1 0.68 -0.1 1. Gate S 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation ID IDM Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case PD RthJA RthJC Unit V -4.2 -3.5 A -30 1.4 1 W 90 125 ℃/W 60 Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage Test Conditions Min VDS=-24V, VGS=0V -1 -5 IGSS VDS=0V, VGS=±12V VDS=VGS ID=-250μA -0.4 On state drain current Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs -1 42 VGS=-2.5V, ID=-1A 80 120 VDS=-5V, ID=-5A -25 7 77 VGS=0V, VDS=0V, f=1MHz 6 VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=6Ω 3.2 12 tf IF=-4A, dI/dt=100A/μs 20.2 Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/μs 11.2 Maximum Body-Diode Continuous Current IS www.kexin.com.cn ns 38.3 trr A18E F nC 2 Body Diode Reverse Recovery Time Marking Ω 9.4 VGS=-4.5V, VDS=-15V, ID=-4A Turn-Off Fall Time ■ Marking pF 115 3 VSD S 954 VGS=0V, VDS=-15V, f=1MHz 6.3 tr mΩ A 11 Qgd td(off) 50 65 td(on) Turn-Off DelayTime V 53 Turn-On DelayTime Turn-On Rise Time nA -1.3 VGS=-4.5V, ID=-4A VGS=-4.5V, VDS=-5V μA ±100 75 TJ=125℃ Gate Drain Charge Diode Forward Voltage 2 ID(ON) VGS=-10V, ID=-4.2A Unit V VDS=-24V, VGS=0V, TJ=55℃ VGS(th) RDS(On) Max -30 ID=-250μA, VGS=0V VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance Typ IS=-1A,VGS=0V -0.75 nC -2.2 A -1 V MOSFET SMD Type P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) ■ Typical Characterisitics 10 25.00 -10V V DS =-5V -4.5V 20.00 8 6 -ID(A) -ID (A) -3V 15.00 -2.5V 10.00 V GS =-2V 5.00 0.00 0.00 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.8 100 80 V GS =-2.5V V GS =-4.5V 60 40 V GS =-10V 20 0.00 ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 V GS =-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 I D=-2A 1.0E-01 130 125°C -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 90 125°C 70 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel Enhancement MOSFET ■ Typical Characterisitics AO3401 HF (KO3401 HF) 1400 5 V DS =-15V ID =-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 C iss 800 600 400 C oss 1 C rss 200 0 0 0 2 4 6 8 10 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics T J(Max) =150°C T A =25°C 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 40 T J(Max) =150°C T A =25°C 10 µs R DS(ON) 10.0 limited 30 100 µs Power (W) -ID (Amps) 100.0 5 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0.1 0.1 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe . Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on /T T J,PK =T A +P DM .ZθJA .RθJA R θJA =90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 www.kexin.com.cn 100 1000