Transistors DIP Type NPN Darlington Transistors TIP120 (KIP120) TO-220 3.30 ± 0.10 10.16 ± 0.20 2.54 ± 0.20 ø3.18 ± 0.10 ■ Features 15.80 ± 0.20 ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=60 V 15.87 ± 0.20 6.68 ± 0.20 (0.70) (1.00x45 ) MAX1.47 0.80 ± 0.10 0 ) 1 #12 3 (3 9.75 ± 0.30 ● Medium Power Complementary Silicon Transistors 0.35 ± 0.10 +0.10 0.50 –0.05 2.76 ± 0.20 2.54TYP [2.54 ± 0.20 ] 4.70 ± 0.20 2.54TYP [2.54 ± 0.20 ] 9.40 ± 0.20 1. Base 2. Collector 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 5 IC 5 A W Collector Current - Continuous PC 2 Thermal Resistance Junction to Ambient RθJA 62.5 Thermal Resistance Junction to Case RθJC 1.92 Collector Power Dissipation Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V ℃/W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 30 mA， IB= 0 60 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.2 Collector- emitter cut-off current ICEO VCE= 30 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 5V , IC=0 2 IC=3 A, IB=12 mA 2 IC=5 A, IB=20 mA 4 1.2 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) IC=3 A, IB=12 mA VBE VCE= 3V, IC= 3 A Base-emitter voltage DC current gain hFE Collector output capacitance Cob V mA V 2.5 VCE= 3V, IC= 0.5A 1000 VCE= 3V, IC= 3 A 1000 VCB= 10V, IE=0,f=0.1MHz Unit 200 pF www.kexin.com.cn 1