Transistors SMD Type NPN Medium Power Transistor KCP56-16 SOT-223 ■ Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● High collector current +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages +0.2 0.90-0.2 +0.1 3.00-0.1 ● Low collector-emitter saturation voltage +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit collector-base voltage VCBO 100 V collector-emitter voltage VCEO 80 V emitter-base voltage VEBO 5 V collector current (DC) IC 1 A peak collector current (tP < 5ms) ICM 1.5 A power dissipation PD 1.5 W RθJA 94 ℃/W junction temperature Tj 150 ℃ storage temperature Tstg -65 to +150 ℃ thermal resistance from junction to ambient ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 100 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 80 Base-emitter breakdown voltage V(BR)EBO IC= 10μA,IE=0 5 Typ Max Unit Collector cut-off current ICBO IE = 0 A; VCB = 30 V 100 nA Emitter cut-off current IEBO IC = 0 A; VEB = 5 V 100 nA DC current gain hFE Collector-emitter saturation voltage Transition frequency VCE(sat) fT IC = 5 mA; VCE = 2 V 25 IC =150 mA; VCE = 2 V 100 IC = 500 mA; VCE = 2 V 25 250 IC = 500mA; IB = 50 mA IC = 10 mA; VCE = 5 V; f = 100 MHz 0.5 130 V MHz www.kexin.com.cn 1