KEXIN KCP56-16

Transistors
SMD Type
NPN Medium Power Transistor
KCP56-16
SOT-223
■ Features
Unit: mm
+0.2
3.50-0.2
+0.2
6.50-0.2
● High collector current
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
● For AF driver and output stages
+0.2
0.90-0.2
+0.1
3.00-0.1
● Low collector-emitter saturation voltage
+0.3
7.00-0.3
4
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
collector-base voltage
VCBO
100
V
collector-emitter voltage
VCEO
80
V
emitter-base voltage
VEBO
5
V
collector current (DC)
IC
1
A
peak collector current (tP < 5ms)
ICM
1.5
A
power dissipation
PD
1.5
W
RθJA
94
℃/W
junction temperature
Tj
150
℃
storage temperature
Tstg
-65 to +150
℃
thermal resistance from junction to ambient
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
100
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA,IB=0
80
Base-emitter breakdown voltage
V(BR)EBO
IC= 10μA,IE=0
5
Typ
Max
Unit
Collector cut-off current
ICBO
IE = 0 A; VCB = 30 V
100
nA
Emitter cut-off current
IEBO
IC = 0 A; VEB = 5 V
100
nA
DC current gain
hFE
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC = 5 mA; VCE = 2 V
25
IC =150 mA; VCE = 2 V
100
IC = 500 mA; VCE = 2 V
25
250
IC = 500mA; IB = 50 mA
IC = 10 mA; VCE = 5 V; f = 100 MHz
0.5
130
V
MHz
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